公开(公告)号：US20210043506A1

公开(公告)日：2021-02-11

申请号：US16598878

申请日：2019-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Ismail Emesh ,  Xikun Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: Methods and apparatus for forming an interconnect, including: depositing a first barrier layer upon a top surface of a via and a top surface of a trench; filling the via with a first metal, wherein the first metal completely fills the via and forms a metal layer within the trench; etching the metal layer within the trench to expose dielectric sidewalls of the trench, a top surface of the via, and a dielectric bottom of the trench; depositing a second barrier layer upon the dielectric sidewalls, top surface of the via, and the dielectric bottom of the trench; and filling the trench with a second metal different than the first metal.

公开(公告)号：US10770346B2

公开(公告)日：2020-09-08

申请号：US16229710

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/67 ,  H01L23/532 ,  H01L21/321

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US20180171502A1

公开(公告)日：2018-06-21

申请号：US15380771

申请日：2016-12-15

Applicant: APPLIED Materials, Inc.

Inventor： Serdar Aksu ,  Jung Gu Lee ,  Bart Sakry ,  Roey Shaviv

IPC: C25D5/18 ,  C25D5/34 ,  C25D5/16

CPC classification number: C25D5/18 ,  C25D3/38 ,  C25D5/16 ,  C25D5/34 ,  C25D7/12 ,  C25D17/001

Abstract: A method of electroplating on a workpiece having at least one sub-30 nm feature includes applying a first electrolyte chemistry to the workpiece, the chemistry including a metal cation solute species having a concentration in the range of about 50 mM to about 250 mM and a suppressor resulting in polarization greater than 0.75 V and reaching 0.75 V of polarization at a rate greater than 0.25 V/s, and applying an electric waveform, wherein the electric waveform includes a period of ramping up of current followed by a period of partial ramping down of current.

公开(公告)号：US20170200642A1

公开(公告)日：2017-07-13

申请号：US14991712

申请日：2016-01-08

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L23/53238

Abstract: In one embodiment of the present disclosure, a method for depositing metal in a feature on a workpiece is provided. The method includes electrochemically depositing a second metal layer on a first metal layer on a workpiece having at least two features of two different sizes in a dielectric layer, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from the group consisting of cobalt and nickel, wherein the first metal layer completely fills the smallest feature but does not completely fill the largest feature.

公开(公告)号：US20170159199A1

公开(公告)日：2017-06-08

申请号：US15440929

申请日：2017-02-23

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  John Lam ,  Timothy Bochman

IPC: C25D7/12 ,  C25D5/10 ,  H01L21/02 ,  C25D17/00 ,  H01L21/67 ,  H01L21/677 ,  C25D3/12 ,  C25D5/50

CPC classification number: C25D17/001 ,  C25D3/12 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/67276 ,  H01L21/67769 ,  H01L23/53209

Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.

公开(公告)号：US09469911B2

公开(公告)日：2016-10-18

申请号：US14601989

申请日：2015-01-21

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Roey Shaviv

IPC: C25D5/00

CPC classification number: C25D17/008 ,  C25D5/00 ,  C25D17/001 ,  C25D17/007 ,  C25D17/12

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract translation: 电镀设备具有一个或多个膜管环，其作为电场屏蔽，以在工件的周边提供有利的电镀特性。 膜管环可以填充具有不同导电性的流体，以根据需要改变电镀不同类型的基底的屏蔽效果。 膜管环可以可选地设置在装置的容器中的扩散器板中或其上。

公开(公告)号：US09425092B2

公开(公告)日：2016-08-23

申请号：US14211602

申请日：2014-03-14

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Roey Shaviv ,  Mehul Naik

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.

Abstract translation: 一种用于在工件上制造互连件的方法包括获得具有特征的工件衬底，在特征中沉积导电层以部分或全部填充该特征，如果该特征部分地由 导电层，施加铜覆盖层，热处理工件，以及去除覆盖层以暴露衬底和金属化特征。

公开(公告)号：US20150348836A1

公开(公告)日：2015-12-03

申请号：US14292426

申请日：2014-05-30

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  H01L23/532

CPC classification number: C25D7/123 ,  C23C18/1651 ,  C23C18/1653 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes obtaining a workpiece including a dielectric surface; forming a barrier layer on the dielectric surface; depositing a seed layer on the barrier layer, wherein the barrier and seed stack includes at least one metal having a negative standard electrode potential; and depositing a metallization layer on the seed layer using a bath having a pH range of about 6 to about 11 and a current density in the range of about 1 mA/cm2 to about 5 mA/cm2.

Abstract translation: 根据本公开的一个实施例，用于在工件上的反应性金属膜上沉积金属的方法包括获得包括电介质表面的工件; 在电介质表面上形成阻挡层; 在所述阻挡层上沉积种子层，其中所述势垒和种子堆叠包括至少一种具有负标准电极电位的金属; 以及使用pH范围为约6至约11，电流密度在约1mA / cm 2至约5mA / cm 2范围内的浴，在种子层上沉积金属化层。

公开(公告)号：US20150287675A1

公开(公告)日：2015-10-08

申请号：US14677673

申请日：2015-04-02

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/321 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/0274 ,  H01L21/2885 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76822 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive interconnect including trenches (110) and (186) and vias (202) are formed in a workpiece (100) by applying a dielectric film stack (120) over the workpiece, and thereafter applying photoresist (140) over the film stack. Trenches (142) are patterned in the photoresist, wherein the trenches are in segments disposed end-to-end to each other. The segments are longitudinally spaced apart from each other at locations where the vias (202) are to be located. The trenches are etched into the dielectric film stack, and then filled with conductive material to form metal line segments (186). Vias (192) are patterned in the gaps separating the adjacent ends of the longitudinally-related lines (186). The patterned vias are etched and then filled with a conductive material, with the ends of the adjacent line segments (186) serving to accurately locate the vias, in a direction along the lengths of the trenches.

Abstract translation: 通过在工件上施加电介质膜堆叠（120），然后将光致抗蚀剂（140）施加在膜堆上，在工件（100）中形成包括沟槽（110）和（186）和通孔（202）的导电互连。 沟槽（142）在光致抗蚀剂中图案化，其中沟槽处于彼此端对端设置的段中。 这些段在通孔（202）将位于的位置处彼此纵向间隔开。 将沟槽蚀刻到电介质膜堆叠中，然后用导电材料填充以形成金属线段（186）。 通孔（192）在分离纵向相关线（186）的相邻端的间隙中被图案化。 图案化的通孔被蚀刻，然后用导电材料填充，相邻的线段（186）的端部用于在沿着沟槽的长度的方向上精确地定位通孔。

公开(公告)号：US12148660B2

公开(公告)日：2024-11-19

申请号：US17487123

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.