公开(公告)号：US20100207100A1

公开(公告)日：2010-08-19

申请号：US12668386

申请日：2008-06-20

申请人： Martin Strassburg ,  Lutz Hocppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

发明人： Martin Strassburg ,  Lutz Hocppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

IPC分类号： H01L33/06 ,  H01L29/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.

摘要翻译： 辐射发射半导体本体包括接触层和有源区。 半导体本体具有布置在接触层和有源区之间的隧道结。 有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。

公开(公告)号：US09806223B2

公开(公告)日：2017-10-31

申请号：US12985903

申请日：2011-01-06

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

公开(公告)号：US20080203407A1

公开(公告)日：2008-08-28

申请号：US12011458

申请日：2008-01-25

申请人： Magnus Ahlstedt ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。

公开(公告)号：US09018641B2

公开(公告)日：2015-04-28

申请号：US12745686

申请日：2008-10-24

申请人： Peter Brick ,  Uwe Strauss

发明人： Peter Brick ,  Uwe Strauss

IPC分类号： H01L29/49 ,  H01S5/32 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/40

CPC分类号： H01S5/1082 ,  H01S5/0035 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/204 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/3215 ,  H01S5/4043 ,  H01S2301/18 ,  H01S2301/185 ,  H01S2301/206

摘要： A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

摘要翻译： 一种用于制造辐射发射部件（1）的方法，其中指定了在与部件的主发射轴垂直的方向上的近场（101,201）的场分布。 根据近场的场分布，确定沿该方向的折射率分布（111,211,511）的折射率。 确定组件的结构，使得组件将具有先前确定的折射率曲线。 该组件根据先前确定的结构构造。 还公开了一种辐射发射元件。

公开(公告)号：US08536603B2

公开(公告)日：2013-09-17

申请号：US13123779

申请日：2009-10-12

申请人： Stefan Illek ,  Uwe Strauss

发明人： Stefan Illek ,  Uwe Strauss

IPC分类号： H01L33/00

CPC分类号： H01S5/12 ,  H01L33/14 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/06256 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/209 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

摘要翻译： 具有彼此排列的多个层的半导体层序列的光电子半导体芯片包括：有源层，具有在工作时发射方向上发射电磁辐射的有源区;活性层上的第一光栅层， 发射方向具有垂直于发射方向延伸的格栅线的形式的多个条纹，并且其间具有间隔布置的第一光栅层和覆盖第一光栅层和空间的条纹的第二光栅层，并且包括 通过非外延应用施加的透明材料。

公开(公告)号：US20130128909A1

公开(公告)日：2013-05-23

申请号：US13695249

申请日：2011-05-09

申请人： Harald Koenig ,  Uwe Strauss ,  Wolfgang Reill

发明人： Harald Koenig ,  Uwe Strauss ,  Wolfgang Reill

IPC分类号： H01S5/30 ,  H01L33/00

CPC分类号： H01S5/30 ,  H01L33/005 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/4031 ,  H01L2924/00

摘要： An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

摘要翻译： 指定边缘发射半导体激光器。 半导体本体包括适于产生电磁辐射的活性区域。 有源区域上的至少两个面形成谐振器。 至少两个接触点在横向方向上彼此间隔开至少一个中间区域，并且安装在半导体本体的外表面上。

公开(公告)号：US08431937B2

公开(公告)日：2013-04-30

申请号：US12442501

申请日：2007-09-10

申请人： Uwe Strauss

发明人： Uwe Strauss

IPC分类号： H01L27/15

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A semiconductor chip includes a carrier and a semiconductor body, which includes a semiconductor layer sequence having an active region provided for generating radiation. The carrier has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body. The semiconductor body is cohesively fixed to the carrier by means of a connection layer. A plurality of reflective or scattering elements are formed between the second carrier area and the active region.

摘要翻译： 半导体芯片包括载体和半导体本体，其包括具有用于产生辐射的有源区的半导体层序列。 载体具有面向半导体主体的第一载体区域和远离半导体主体的第二载体区域。 半导体主体通过连接层内聚固定到载体上。 在第二载体区域和有源区域之间形成多个反射或散射元件。

公开(公告)号：US20100066254A1

公开(公告)日：2010-03-18

申请号：US12520630

申请日：2007-12-14

申请人： Hubert Ott ,  Alfred Lell ,  Uwe Strauss ,  Volker Haerle ,  Norbert Stath

发明人： Hubert Ott ,  Alfred Lell ,  Uwe Strauss ,  Volker Haerle ,  Norbert Stath

IPC分类号： H01J1/60 ,  G02B6/00 ,  F21V21/00 ,  A47F3/00

CPC分类号： G02B6/0003 ,  G02B6/001 ,  G02B6/03622 ,  G02B6/03638

摘要： One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.

摘要翻译： 本发明的一个实施例提出了一种发光装置，其包括用于发射具有至少第一波长的辐射的辐射源和细长弯曲的光导体，辐射源发射的辐射耦合在该导光体中， 由于具有第一波长的耦合辐射，它们相对于其纵向轴线以一定角度耦合出光。

公开(公告)号：US20080212191A1

公开(公告)日：2008-09-04

申请号：US12072842

申请日：2008-02-27

申请人： Volker Harle ,  Alfred Lell ,  Hubert Ott ,  Norbert Stath ,  Uwe Strauss

发明人： Volker Harle ,  Alfred Lell ,  Hubert Ott ,  Norbert Stath ,  Uwe Strauss

IPC分类号： G02B27/10

CPC分类号： G02B27/1006 ,  G02B19/0019 ,  G02B19/0028 ,  G02B19/0057 ,  G02B27/141 ,  G02B27/143 ,  G02B27/145 ,  G02B27/149

摘要： An optical arrangement comprising at least one first light-emitting element (LE1) and at least one second light-emitting element (LE2), and at least one light addition device (1) arranged in such a way that the light from the first and the second light-emitting element (LE1, LE2) are added to form a light beam.

摘要翻译： 一种光学装置，包括至少一个第一发光元件（LE 1）和至少一个第二发光元件（LE 2），以及至少一个光添加装置（1），其布置成使得来自 第一和第二发光元件（LE 1，LE 2）相加以形成光束。

公开(公告)号：US07345313B2

公开(公告)日：2008-03-18

申请号：US10493914

申请日：2002-10-28

申请人： Uwe Strauss ,  Andreas Weimar

发明人： Uwe Strauss ,  Andreas Weimar

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/38

摘要： A nitride-based semiconductor component having a semiconductor body (1) with a contact metalization (4) applied thereon. The semiconductor body (1) is provided with a protective layer which, if appropriate, also covers partial regions of the contact metalization (4) and which has a plurality of recesses (5) arranged near to one another.

摘要翻译： 一种具有在其上施加有接触金属化（4）的半导体本体（1）的氮化物基半导体部件。 半导体本体（1）设置有保护层，如果适当的话也覆盖接触金属化（4）的部分区域，并且具有彼此靠近设置的多个凹部（5）。