Substrate treatment apparatus and method for manufacturing thin film
    12.
    发明授权
    Substrate treatment apparatus and method for manufacturing thin film 有权
    基板处理装置及薄膜制造方法

    公开(公告)号:US09171745B2

    公开(公告)日:2015-10-27

    申请号:US13643873

    申请日:2010-04-28

    摘要: To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.

    摘要翻译: 提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。 作为本发明的一个方面,提供一种基板处理装置,该基板处理装置具有旋转涂布处理室4a,用于通过旋转涂布在基板上涂覆膜;第一空调机构,其调节空气中的灰尘量 旋涂处理室,对涂布在基板上的膜进行灯退火处理的退火处理室7a,与旋涂处理室和退火处理室连接的输送室2a, 旋转涂布处理室和退火处理室之间的基板,以及调节输送室中的空气中的灰尘量的第二空调机构。

    FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM
    13.
    发明申请
    FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM 审中-公开
    电解膜,溶胶凝胶溶液,薄膜形成方法和制造电磁膜的方法

    公开(公告)号:US20130165313A1

    公开(公告)日:2013-06-27

    申请号:US13809264

    申请日:2010-07-12

    IPC分类号: C04B35/49 B05D5/12

    摘要: To produce a ferroelectric film including a non-lead material. An embodiment of the present invention is a ferroelectric film characterized by being represented by (Baaα1-a)(Tibβ1-b(α: one or more metal elements among Mg (magnesium), Ca2+ (calcium), Sr (strontium), Li (lithium), Na (sodium), K (potassium), Rb (rubidium), Cs (cesium), Mg (magnesium), Ca2+ (calcium) and Sr (strontium), β: one or more metal elements among Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Sc (scandium), Y (yttrium), La (lanthanum), Ce (cerium), Pr (praseodymium), Nd (neodymium), Sm (samarium), Eu (europium), Gd (gadolinium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium), Lu (lutetium), Ha (hafnium) and Ta (tantalum)).

    摘要翻译: 制造包含非铅材料的铁电体膜。 本发明的一个实施方案是由(Baaalpha1-a)(Tibbeta1-b(α:Mg(镁))中的一种或多种金属元素,Ca 2+(钙),Sr(锶),Li( 锂(钠),钾(钾),Rb(铷),Cs(铯),Mg(镁),Ca2 +(钙)和Sr(锶),β:钛(钛) ,钒(钒),铬(铬),锰(锰),铁(Fe),钴(钴),镍(镍),铜(铜),锆(锆),铌(铌) ,Ru(钌),Rh(铑),Pd(钯),Ag(银),Sc(钪),Y(钇),La(镧),Ce(铈),Pr(镨) ,钐(钐),铕(铕),钆(铽),铽(铽),钆(钆),铽(铽),镝(镝),钬(钬) ,铪(铪)和钽(钽))。

    PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE
    14.
    发明申请
    PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE 有权
    压力型灯泡退火装置,薄膜​​生产方法,以及使用加压型灯具退火装置的方法

    公开(公告)号:US20130026152A1

    公开(公告)日:2013-01-31

    申请号:US13579394

    申请日:2010-08-02

    IPC分类号: H01L21/26 H05B6/00

    摘要: Provided is a pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment is a pressurizing-type lamp annealing device which includes: a treatment chamber 25; a holding part 23 disposed into the treatment chamber to hold a substrate to be treated 22; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube 20 disposed into the treatment chamber; and a lamp heater 19 placed in the treatment chamber to irradiate the substrate to be treated with a lamp light, through the transparent tube.

    摘要翻译: 提供一种可以容易地处理具有大表面积的待处理基板的加压型灯退火装置。 一个实施例是一种加压型灯退火装置,包括:处理室25; 设置在处理室中以保持要处理的基板22的保持部23; 用于将加压气体引入处理室的气体导入机构; 用于排出处理室中的气体的气体排出机构; 设置在处理室中的透明管20; 以及放置在处理室中的灯加热器19,以通过透明管照射待处理的基板。

    Plasma CVD apparatus, plasma CVD method, and agitating device

    公开(公告)号:US10125421B2

    公开(公告)日:2018-11-13

    申请号:US12865788

    申请日:2008-02-06

    摘要: A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.

    POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE
    16.
    发明申请
    POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE 审中-公开
    抛光处理方法,等离子体激光装置,压电体及其制造方法,成膜装置和蚀刻装置以及灯具退火装置

    公开(公告)号:US20140191618A1

    公开(公告)日:2014-07-10

    申请号:US14123138

    申请日:2011-06-07

    摘要: A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

    摘要翻译: 一种等离子体极化装置,包括:保持电极(4),其设置在极化室(1)中并保持待极化的基板(2);相对电极(7),设置在所述极化室中并面向所述基板 被保持在保持电极上,电连接到保持电极和相对电极的一个电极的电源(6),将等离子体形成气体供给到相对电极和保持电极之间的空间中的气体供给机构, 以及控制电源和气体供给机构的控制单元。 控制单元控制电源和气体供给机构,以在面向要极化的基板的位置处形成等离子体,并对待极化的基板进行极化处理。

    PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM
    17.
    发明申请
    PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM 有权
    PBNZT FERROELECTRIC FILM,SOL-GEL SOLUTION,FILM FORMING METHOD AND METHOD FOR PRODUCE FERROELECTRIC FILM

    公开(公告)号:US20130022839A1

    公开(公告)日:2013-01-24

    申请号:US13522824

    申请日:2010-07-23

    摘要: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

    摘要翻译: 提供能够防止足够的氧离子缺乏的PBNZT铁电体膜。 根据本发明实施例的PBNZT铁电体膜是由ABO 3表示的钙钛矿结构的铁电体的铁电体膜,其中,钙钛矿结构的铁电体是含有Pb 2+作为A-位离子的PZT系铁电体,含有 Zr4 +和Ti4 +作为B位离子,A位含有Bi3 +作为A位点补偿离子,B位含有Nb5 +作为B位点补偿离子。

    PLASMA CVD DEVICE, DLC FILM, AND METHOD FOR DEPOSITING THIN FILM
    18.
    发明申请
    PLASMA CVD DEVICE, DLC FILM, AND METHOD FOR DEPOSITING THIN FILM 审中-公开
    等离子体CVD装置,DLC膜和沉积薄膜的方法

    公开(公告)号:US20110165057A1

    公开(公告)日:2011-07-07

    申请号:US13001089

    申请日:2009-06-30

    摘要: To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a≧2.

    摘要翻译: 提供一种等离子体CVD装置,其能够增加在CVD沉积期间的高频放电期间在电极处产生的DC分量的电压VDC。 根据本发明的等离子体CVD装置包括室1,保持电极2,其设置在室的内部,并适于保持其上要沉积膜的基板;高频电源8,其与 保持电极,与由保持电极保持的薄膜所在的基板相对设置并与接地电源或浮动电源连接的对置电极12,用于供给原料气体的原料气体供给机构 进入对置电极和保持电极之间的空间13以及用于抽空室内部的抽空机构,其中保持电极的表面积“a”和对置电极的表面积“b”满足公式 以下,b /a≥2。

    PLASMA CVD APPARATUS, PLASMA CVD METHOD, AND AGITATING DEVICE
    19.
    发明申请
    PLASMA CVD APPARATUS, PLASMA CVD METHOD, AND AGITATING DEVICE 审中-公开
    等离子体CVD装置,等离子体CVD方法和激活装置

    公开(公告)号:US20110003088A1

    公开(公告)日:2011-01-06

    申请号:US12865788

    申请日:2008-02-06

    摘要: The present invention provides a plasma CVD apparatus and a plasma CVD method capable of efficiently coating the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus according to the present invention is characterized by including a chamber 13, a container disposed in the chamber for housing fine particles 1, the container having a polygonal inner shape in a section approximately parallel to the direction of the gravity, a ground shielding member 27 for shielding the surface of the container other than a housing face for housing the fine particles 1, a rotation mechanism for causing the container to rotate or act as a pendulum on the axis of rotation approximately perpendicular to the section, an opposed electrode 21 disposed in the container so as to face the housing face, a plasma power source 23 electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the inside of the chamber.

    摘要翻译: 本发明提供一种等离子体CVD装置和等离子体CVD方法,其能够通过在细颗粒附近浓缩等离子体而用薄膜或超细颗粒有效地涂覆微粒表面。 根据本发明的等离子体CVD装置的特征在于包括:室13,设置在容纳微粒1的室中的容器,具有与重力方向近似平行的截面的多边形内部形状的容器,地面 用于遮蔽容器表面的屏蔽构件27,除了用于容纳微粒1的容纳面以外,用于使容器旋转的旋转机构或者作为大致垂直于该截面的旋转轴的摆锤,相对的电极 21,与容器面相对配置在容器内,与容器电连接的等离子体动力源23,将原料气体导入容器的气体导入机构,以及对室内抽真空的排气机构。

    Inside and outside air change-over control unit for vehicle use
    20.
    发明申请
    Inside and outside air change-over control unit for vehicle use 审中-公开
    用于车辆使用的内外空气切换控制单元

    公开(公告)号:US20060030253A1

    公开(公告)日:2006-02-09

    申请号:US11151675

    申请日:2005-06-13

    IPC分类号: B60H1/00

    摘要: At the time of the inside air mode, the concentration of CO2 in the vehicle passenger compartment is calculated (S80). When the calculated value of the concentration of CO2 in the vehicle passenger compartment exceeds a predetermined value, the inside and outside change-over door is changed over to the outside air mode (S90, S20).

    摘要翻译: 在内部空气模式时,计算车辆乘客室中CO 2 2浓度(S80)。 当车辆乘客室中CO 2浓度的计算值超过预定值时,内外转换门切换到外部空气模式(S90,S20) 。