MOS transistor with a deformable gate
    12.
    发明授权
    MOS transistor with a deformable gate 有权
    具有可变形栅极的MOS晶体管

    公开(公告)号:US07304358B2

    公开(公告)日:2007-12-04

    申请号:US11227624

    申请日:2005-09-15

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

    Abstract translation: 一种MOS晶体管,其具有形成在半导体衬底中的可变形栅极,包括源极和漏极区域,所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开, 至少在所述通道区域上方,在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸,并且使得所述通道区域的表面是中空的,并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。

    Switchable inductance
    19.
    发明授权
    Switchable inductance 有权
    可切换电感

    公开(公告)号:US07259649B2

    公开(公告)日:2007-08-21

    申请号:US10903896

    申请日:2004-07-30

    Abstract: A switchable inductance that can be formed in an integrated circuit, including a spiral interrupted between two first points connected to two terminals via two metallizations running one above the other, one of the two metallizations being deformable; a hollowing between the two metallizations; and a switching device capable of deforming the deformable metallization to separate or to put in contact said two metallizations.

    Abstract translation: 可以形成在集成电路中的可切换电感,包括通过两个金属化连接到两个端子的两个第一点之间中断的螺旋,一个在另一个之上运行,两个金属化之一可变形; 两个金属化之间的空心; 以及能够使可变形金属化变形以分离或接触所述两个金属化的开关装置。

    Electromechanical resonator and method for fabricating such a resonator
    20.
    发明授权
    Electromechanical resonator and method for fabricating such a resonator 有权
    机电谐振器及其制造方法

    公开(公告)号:US07196451B2

    公开(公告)日:2007-03-27

    申请号:US10895616

    申请日:2004-07-21

    CPC classification number: H03H9/2405 H03H2009/02511

    Abstract: An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).

    Abstract translation: 机电谐振器包括设置有由绝缘区限定的有源区(ZA)的单晶硅衬底(S),由绝缘区上的至少一个自由端锚定的振动束(10),并且包括单晶硅衬底 硅振动中心部分(12)和布置在梁的上方并且承载在活动区上的控制电极(E)。 光束的中心部分(12)与有源区(ZA)和控制电极(E)分离。

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