公开(公告)号：US20170084449A1

公开(公告)日：2017-03-23

申请号：US15247586

申请日：2016-08-25

Applicant: Applied Materials, Inc.

Inventor： Abhishek DUBE ,  Schubert S. CHU ,  Jessica S. KACHIAN ,  David THOMPSON ,  Jeffrey ANTHIS

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/283

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/45544 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/283 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20150086722A1

公开(公告)日：2015-03-26

申请号：US14484423

申请日：2014-09-12

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Xinliang LU ,  Kyoung-Ho BU ,  Jing ZHOU ,  Seshadri GANGULI ,  David THOMPSON

IPC: B08B5/00

CPC classification number: H01J37/32862 ,  C23C16/08 ,  C23C16/4405 ,  H01J37/32522 ,  H01J37/32724

Abstract: Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

Abstract translation: 本文所述的实施方案涉及热氯气清洗工艺。 在一个实施例中，用于清洁处理室中的N金属膜沉积的方法包括将虚设基板定位在基板支撑件上。 将处理室加热至至少约50摄氏度。 该方法还包括将氯气流入处理室并从处理室排出氯气。 在另一个实施方案中，一种用于清洁处理室中的铝化铝膜沉积的方法包括将处理室加热到约70摄氏度至约100摄氏度之间的温度，其中处理室和衬底支撑体包括一个或多个流体通道 被配置为加热或冷却处理室和基板支撑件。

公开(公告)号：US20190078204A1

公开(公告)日：2019-03-14

申请号：US15702497

申请日：2017-09-12

Applicant: Applied Materials, Inc.

Inventor： Vijay D. PARKHE ,  David THOMPSON

IPC: C23C16/44 ,  B03C3/06 ,  B03C3/49 ,  C01F7/02 ,  C01B21/072 ,  C01B33/12 ,  C01B21/068 ,  C01G25/00 ,  C01F17/00

Abstract: Embodiments described herein generally pertain to an electrostatic device for use in a process system. Process gas may flow through an aperture formed in a tubular body of a filter. Electrodes disposed within the tubular body create an electric field. The field generated by the electrodes may be utilized to trap contaminate particles flowing through the aperture before entering the processing chamber.

公开(公告)号：US20180096834A1

公开(公告)日：2018-04-05

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David KNAPP ,  Simon HUANG ,  Jeffrey W. ANTHIS ,  Philip Alan KRAUS ,  David THOMPSON

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0332 ,  B82Y30/00 ,  C08K3/04 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/0206 ,  H01L21/0335 ,  H01L21/0337

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20170098575A1

公开(公告)日：2017-04-06

申请号：US15285011

申请日：2016-10-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. KESAPRAGADA ,  Kevin MORAES ,  Srinivas GUGGILLA ,  He REN ,  Mehul NAIK ,  David THOMPSON ,  Weifeng YE ,  Yana CHENG ,  Yong CAO ,  Xianmin TANG ,  Paul F. MA ,  Deenesh PADHI

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76832 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

公开(公告)号：US20150252477A1

公开(公告)日：2015-09-10

申请号：US14616206

申请日：2015-02-06

Applicant: Applied Materials, Inc.

Inventor： Victor NGUYEN ,  Mihaela BALSEANU ,  Ning LI ,  Steven D. MARCUS ,  Mark SALY ,  David THOMPSON ,  Li-Qun XIA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/24 ,  C23C16/50

CPC classification number: C23C16/45525 ,  C23C16/24 ,  C23C16/30 ,  C23C16/345 ,  C23C16/347 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/50

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

Abstract translation: 本文公开的实施方案通常涉及衬底的处理，更具体地涉及形成电介质膜的方法。 在一个实施例中，该方法包括将多个基板放置在处理室内并执行将基板暴露于包含硅的第一反应气体的顺序，然后将基板暴露于包含氮气的至少第二反应气体的等离子体 一个氧或碳，并且重复该顺序以在每个基板上形成包含氮化碳或氮氧化硅的电介质膜。

公开(公告)号：US20220298920A1

公开(公告)日：2022-09-22

申请号：US17832568

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： Yuriy MELNIK ,  Sukti CHATTERJEE ,  Kaushal GANGAKHEDKAR ,  Jonathan FRANKEL ,  Lance A. SCUDDER ,  Pravin K. NARWANKAR ,  David Alexander BRITZ ,  Thomas KNISLEY ,  Mark SALY ,  David THOMPSON

IPC: F01D5/28 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D9/02 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28

Abstract: Methods for forming protective coatings on aerospace components are provided. In one or more embodiments, the method includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a first deposition process (e.g., CVD or ALD), and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second deposition process. The first deposited layer and the second deposited layer have different compositions from each other. The method also includes repeating the first deposition process and the second deposition process to form a nanolaminate film stack having from 2 pairs to about 1,000 pairs of the first deposited layer and the second deposited layer consecutively deposited on each other.

公开(公告)号：US20210254223A1

公开(公告)日：2021-08-19

申请号：US17313863

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： David BRITZ ,  Pravin K. NARWANKAR ,  David THOMPSON ,  Yuriy MELNIK ,  Sukti CHATTERJEE

IPC: C23C28/00 ,  F01D5/28 ,  F01D5/18 ,  C23C16/455

Abstract: Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof.

公开(公告)号：US20190284694A1

公开(公告)日：2019-09-19

申请号：US16356700

申请日：2019-03-18

Applicant: Applied Materials, Inc.

Inventor： Thomas KNISLEY ,  Mark SALY ,  David Alexander BRITZ ,  David THOMPSON

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40

Abstract: Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. In one or more embodiments, a method for depositing a protective coating on an aerospace component includes sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

公开(公告)号：US20190027403A1

公开(公告)日：2019-01-24

申请号：US16140342

申请日：2018-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. KESAPRAGADA ,  Kevin MORAES ,  Srinivas GUGGILLA ,  He REN ,  Mehul NAIK ,  David THOMPSON ,  Weifeng YE ,  Yana CHENG ,  Yong CAO ,  Xianmin TANG ,  Paul F. MA ,  Deenesh PADHI

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76832 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.