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    Methods for forming protective coatings containing crystallized aluminum oxide
    11.
    发明授权
    Methods for forming protective coatings containing crystallized aluminum oxide 有权

    公开(公告)号：US11466364B2

    公开(公告)日：2022-10-11

    申请号：US16670555

    申请日：2019-10-31

    Applicant: Applied Materials, Inc.

    Inventor： Kenichi Ohno ,  Eric H. Liu ,  Sukti Chatterjee ,  Yuriy Melnik ,  Thomas Knisley ,  David Alexander Britz ,  Lance A. Scudder ,  Pravin K. Narwankar

    IPC: C23C16/455 ,  C23C16/02 ,  C23C16/56 ,  C23C16/40

    Abstract: Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

    Method to reduce pore diameter using atomic layer deposition and etching
    15.
    发明授权
    Method to reduce pore diameter using atomic layer deposition and etching 有权

    公开(公告)号：US10994991B2

    公开(公告)日：2021-05-04

    申请号：US16792861

    申请日：2020-02-17

    Applicant: Applied Materials, Inc.

    Inventor： Joseph R. Johnson ,  Kenichi Ohno

    IPC: B82B3/00 ,  G01N33/487 ,  B82B1/00 ,  B81C1/00

    Abstract: Methods are provided for manufacturing well-controlled, solid-state nanopores and arrays of well-controlled, solid-state nanopores by a cyclic process including atomic layer deposition (ALD), or chemical vapor deposition (CVD), and etching. One or more features are formed in a thin film deposited on a topside of a substrate. A dielectric material is deposited over the substrate having the one or more features in the thin film. An etching process is then used to etch a portion of the dielectric material deposited over the substrate having the one or more features in the thin film. The dielectric material deposition and etching processes are optionally repeated to reduce the size of the features until a well-controlled nanopore is formed through the thin film on the substrate.

    Method to create a free-standing membrane for biological applications
    16.
    发明授权
    Method to create a free-standing membrane for biological applications 有权

    公开(公告)号：US10830756B2

    公开(公告)日：2020-11-10

    申请号：US16122171

    申请日：2018-09-05

    Applicant: Applied Materials, Inc.

    Inventor： Ankit Vora ,  Kenichi Ohno ,  Philip Allan Kraus ,  Zohreh Hesabi ,  Joseph R. Johnson

    IPC: G01N27/447 ,  G01N33/487 ,  B82B3/00 ,  B82B1/00 ,  B81C1/00

    Abstract: Methods of manufacturing well-controlled nanopores using directed self-assembly and methods of manufacturing free-standing membranes using selective etching are disclosed. In one aspect, one or more nanopores are formed by directed self-assembly with block co-polymers to shrink the critical dimension of a feature which is then transferred to a thin film. In another aspect, a method includes providing a substrate having a thin film over a highly etchable layer thereof, forming one or more nanopores through the thin film over the highly etchable layer, for example, by a pore diameter reduction process, and then selectively removing a portion of the highly etchable layer under the one or more nanopores to form a thin, free-standing membrane.

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