公开(公告)号：US20230343586A1

公开(公告)日：2023-10-26

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  B08B7/0035 ,  H01L21/0332 ,  C23C16/505 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/02115

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US20220122835A1

公开(公告)日：2022-04-21

申请号：US17075967

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Bhaskar KUMAR ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally relate to methods of forming hardmasks. Embodiments described herein enable, e.g., formation of carbon-containing hardmasks having reduced film stress. In an embodiment, a method of processing a substrate is provided. The method includes positioning a substrate in a processing volume of a processing chamber and depositing a diamond-like carbon (DLC) layer on the substrate. After depositing the DLC layer, the film stress is reduced by performing a plasma treatment, wherein the plasma treatment comprises applying a radio frequency (RF) bias power of about 100 W to about 10,000 W.

公开(公告)号：US20220102141A1

公开(公告)日：2022-03-31

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik Comandoor ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44 ,  B08B7/00

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

公开(公告)号：US20210407802A1

公开(公告)日：2021-12-30

申请号：US17035265

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: H01L21/033 ,  C23C16/50 ,  C23C16/27 ,  C23C16/56

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of −500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than −500 MPa.

公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US20180286674A1

公开(公告)日：2018-10-04

申请号：US15936751

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Rui CHENG ,  Abhijit Basu MALLICK

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02592 ,  H01L21/02617 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/0649

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20170352586A1

公开(公告)日：2017-12-07

申请号：US15175880

申请日：2016-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  H01L27/1157 ,  H01L23/522 ,  H01L27/11524 ,  H01L23/528 ,  H01L21/033 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming a hardmask layer that may be utilized to transfer patterns or features to a film stack with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming a hardmask layer on a substrate includes forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in a processing chamber, forming a transition layer comprising born and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20160314960A1

公开(公告)日：2016-10-27

申请号：US15094512

申请日：2016-04-08

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/32

CPC classification number: H01L21/0234 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/32

Abstract: The present disclosure relates to methods for improving adhesion between a hardmask layer and a subsequent layer on the hardmask layer. Particularly, embodiment of the present disclosure relates to methods for improving adhesion between a metal-doped amorphous carbon layer and a mask layer, such as a silicon oxide layer, a silicon nitride layer, or an amorphous silicon layer. One embodiment of the present disclosure includes performing a plasma treatment to the metal-doped amorphous carbon layer.

Abstract translation: 本公开涉及用于改善硬掩模层和硬掩模层上的后续层之间的粘合性的方法。 特别地，本公开的实施方案涉及用于改善金属掺杂非晶碳层和掩模层之间的粘附性的方法，例如氧化硅层，氮化硅层或非晶硅层。 本公开的一个实施方案包括对金属掺杂的无定形碳层进行等离子体处理。

公开(公告)号：US20150206739A1

公开(公告)日：2015-07-23

申请号：US14161313

申请日：2014-01-22

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu Mallick ,  Mukund Srinivasan

IPC: H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0271 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31133 ,  H01L21/31144 ,  Y10T428/24802

Abstract: Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices.

Abstract translation: 沉积易于除去的杂原子掺杂的含碳层。 含碳层可以用作硬掩模。 掺杂掺杂碳的硬掩模具有高蚀刻选择性和密度以及低压缩应力，这将减少或消除晶片弓的问题。 掺入硬掩模的杂原子包括硫，磷，氮，氧和氟，所有这些对于常用的蚀刻剂具有低反应性。 当使用硫作为杂原子时，硬掩模容易去除，这简化了NAND​​器件，DRAM器件和其它器件的制造。

公开(公告)号：US20220119953A1

公开(公告)日：2022-04-21

申请号：US17075812

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Krishna NITTALA ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/26 ,  C23C16/458 ,  C23C16/56

Abstract: Embodiments of the present disclosure generally relate to hardmasks and to processes for forming hardmasks by plasma-enhanced chemical vapor deposition (PECVD). In an embodiment, a process for forming a hardmask layer on a substrate is provided. The process includes introducing a substrate to a processing volume of a PECVD chamber, the substrate on a substrate support, the substrate support comprising an electrostatic chuck, and flowing a process gas into the processing volume within the PECVD chamber, the process gas comprising a carbon-containing gas. The process further includes forming, under plasma conditions, an energized process gas from the process gas in the processing volume, electrostatically chucking the substrate to the substrate support, depositing a first carbon-containing layer on the substrate while electrostatically chucking the substrate, and forming the hardmask layer by depositing a second carbon-containing layer on the substrate.