公开(公告)号：US10508341B2

公开(公告)日：2019-12-17

申请号：US14839554

申请日：2015-08-28

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt

IPC: C23C16/48 ,  C23C16/00 ,  H01L21/00 ,  C23C16/46 ,  H01L21/67

Abstract: Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate.

公开(公告)号：US09953851B2

公开(公告)日：2018-04-24

申请号：US15207226

申请日：2016-07-11

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Kim Vellore ,  Samuel C. Howells ,  Stephen Moffatt

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/26 ,  H01L21/42 ,  H01L21/44 ,  H01L21/67 ,  H01L21/268 ,  B23K26/00 ,  B23K26/03 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/324 ,  B23K101/40

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

公开(公告)号：US09390926B2

公开(公告)日：2016-07-12

申请号：US14159228

申请日：2014-01-20

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Kim Vellore ,  Samuel C. Howells ,  Stephen Moffatt

IPC: H01L21/00 ,  H01L21/268 ,  B23K26/00 ,  B23K26/03 ,  H01L21/20 ,  H01L21/26 ,  H01L21/36 ,  H01L21/42 ,  H01L21/44

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

Abstract translation: 本文所述的实施例涉及热处理的装置和方法。 更具体地，本文所述的装置和方法涉及通过增加基板表面上的图像中的能量分布的均匀性来对半导体基板进行激光热处理。

公开(公告)号：US08691605B2

公开(公告)日：2014-04-08

申请号：US13679633

申请日：2012-11-16

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt

IPC: H01L21/268

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

Abstract translation: 提供了一种在基板上形成晶体半导体层的方法和装置。 通过气相沉积形成半导体层。 进行脉冲激光熔融/再结晶工艺以将半导体层转变成晶体层。 激光或其他电磁辐射脉冲形成脉冲序列并均匀地分布在处理区域上，并且连续的相邻处理区域暴露于脉冲序列以逐渐将沉积的材料转化为结晶材料。

公开(公告)号：US09735034B2

公开(公告)日：2017-08-15

申请号：US14456682

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Kim Vellore ,  Dinesh Kanawade ,  Stephen Moffatt ,  Aaron Miller ,  Leonid M. Tertitski ,  Norman L. Tam ,  Michael Liu ,  Colin Fox

IPC: H05B3/68 ,  H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

公开(公告)号：US09466500B2

公开(公告)日：2016-10-11

申请号：US14487356

申请日：2014-09-16

Applicant: Applied Materials, Inc.

Inventor： James Francis Mack ,  Stephen Moffatt

IPC: H01B13/00 ,  H01L21/306 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/68 ,  H01L21/285 ,  C23C16/04

CPC classification number: H01L21/306 ,  C23C16/04 ,  C23C16/45544 ,  H01J37/32431 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/681 ,  H01L21/76224 ,  H01L21/76838

Abstract: An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of reactants, features can be directly formed on the workpiece on a sub-micron size, below the resolution of current photolithography. The features may be etched into a workpiece, or formed thereover.

Abstract translation: 该装置在工件上形成纳米尺寸特征的装置和用途包括多个单独可偏压的尖端，并且每个尖端具有刻度上的直径或10nm或更小的直径。 通过在存在反应物的情况下将尖端移动到工件的表面上方，可以以低于当前光刻分辨率的亚微米尺寸直接在工件上形成特征。 特征可以被蚀刻到工件中，或者形成在其上。

公开(公告)号：US20160208415A1

公开(公告)日：2016-07-21

申请号：US14908505

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Christopher Dennis Bencher ,  Peng Xie ,  Stephen Moffatt ,  Bruce E. Adams ,  Majeed A. Foad

IPC: C30B30/04 ,  C30B19/08 ,  C30B29/02

CPC classification number: C30B30/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/5806 ,  C30B19/08 ,  C30B29/02

Abstract: A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a base layer having grains on a wafer substrate where the wafer substrate is a part of a wafer on the work platform; and a magnetic assembly fixed relative to the heating element for aligning the grains of the base layer using a magnetic field of 10 Tesla or greater for formation of an interconnect having a crystal orientation of grains in the interconnect matching the crystal orientation of the grains of the base layer.

Abstract translation: 磁场引导晶体取向系统及其磁场引导晶体取向系统的操作方法，包括：工作平台; 工作平台上方的加热元件，用于选择性地加热晶片衬底上具有晶粒的基底层，其中晶片衬底是工作平台上的晶片的一部分; 以及相对于所述加热元件固定的磁性组件，用于使用10特斯拉或更大的磁场对准所述基底层的晶粒，以形成所述互连中的晶粒取向与所述晶体的晶体取向相匹配 基层。

公开(公告)号：US09285595B2

公开(公告)日：2016-03-15

申请号：US14594890

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B17/08

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US09146337B2

公开(公告)日：2015-09-29

申请号：US14137592

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Theodore P. Moffitt ,  Stephen Moffatt

IPC: G02B27/10 ,  G02B3/00 ,  G02B27/48

CPC classification number: G02B3/0037 ,  G02B27/48

Abstract: Embodiments described herein relate to thermal processing of semiconductor substrates. More specifically, embodiments described herein relate to laser thermal processing of semiconductor substrates. In certain embodiments, a uniformizer is provided to spatially and temporally decorrelate a coherent light image.

Abstract translation: 本文所述的实施例涉及半导体衬底的热处理。 更具体地，本文所述的实施例涉及半导体衬底的激光热处理。 在某些实施例中，提供均匀器来空间和时间地去相关联相干光图像。

公开(公告)号：US09069183B2

公开(公告)日：2015-06-30

申请号：US13625420

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt

IPC: G02B27/10 ,  F21V5/00 ,  G02B27/48 ,  B23K26/06

CPC classification number: G02B27/48 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/0626 ,  B23K26/0648 ,  F21V5/002 ,  F21V5/004 ,  F21V5/007 ,  G02B3/0056 ,  G02B5/021 ,  G02B5/0278 ,  G02B5/04 ,  G02B27/10 ,  H01L21/67115 ,  H01S3/0057

Abstract: Embodiments described herein provide apparatus and methods for processing semiconductor substrates with uniform laser energy. A laser pulse or beam is directed to a spatial homogenizer, which may be a plurality of lenses arranged along a plane perpendicular to the optical path of the laser energy, an example being a microlens array. The spatially uniformized energy produced by the spatial homogenizer is then directed to a refractive medium that has a plurality of thicknesses. Each thickness of the plurality of thicknesses is different from the other thicknesses by at least the coherence length of the laser energy.

Abstract translation: 本文描述的实施例提供了用于以均匀的激光能量处理半导体衬底的装置和方 激光脉冲或光束被引导到空间均质器，其可以是沿着垂直于激光能量的光路的平面布置的多个透镜，例如微透镜阵列。 由空间均化器产生的空间均匀化的能量然后被引导到具有多个厚度的折射介质。 多个厚度的每个厚度至少与激光能量的相干长度不同于其它厚度。