摘要:
A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A−, where R5 is a C1-C10 alkyl group, and A− is a counter-ion.
摘要:
A method and apparatus for providing a user interface is provided. The apparatus includes a transmitting/receiving unit-that receives a instruction signal transmitted by a control device, and a control unit in communication with the transmitting/receiving unit that determines whether devices connected to an audio-video (AV) network can be operated according to the instruction signal that is received, wherein the control device includes a first button that is operable to display a list menu that lists the devices connected to the AV network on a display, and a second button that is operable to display a function menu of at least one function corresponding to the devices on the display.
摘要:
A method and apparatus for recognizing and searching for a face using 2nd-order independent component analysis (ICA) are provided. The method includes performing PCA on an input original image and generating a low-pass filtered image by removing high-frequency component from the original image, subtracting the low-pass filtered image from the original image and obtaining residual image having only frequency-components, and performing ICA on the residual image and generating feature information corresponding to the original image. While an original ICA subtracts independent components (i.e., independent basis components) from gray scale images, the proposed 2nd-order ICA is robust to illumination variation since it is applied to make the remaining images correspond to high pass frequency components.
摘要:
A photosensitive polymer including a copolymer of an acrylate or methacrylate monomer having a group indicated by the following formula (I), a comonomer selected from a maleic anhydride monomer and a cyclic vinyl ether monomer, and a resist composition including the same. In the formula, R1, R2, R3, and R4 are independently a hydrogen atom, a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, a benzyl group, a phenoxy group, or —M(R′)3, M is Si, Ge, Sn, or OSi, and each R′ independently is a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, or a phenoxy group.
摘要:
A photosensitive compound, and a chemically amplified photoresist composition containing the photosensitive compound, maintain transparency even when exposed to a short-wavelength light source of 193 nm or below, and exhibit improved adhesion to an underlying film or substrate, improved wettability to a developing solution and improved resistance to dry etching. The photosensitive compound includes a carboxylic acid protected with a protective group capable of being deprotected with an acid and has a hydroxy at position No. 3 substituted with a hydrophillic aliphatic compound or a hydrophillic alicyclic compound.
摘要:
A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.
摘要:
A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.
摘要:
Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/μm or greater with respect to 193-nm incident light.
摘要:
Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要:
A post-filtering apparatus and method for speech enhancement in a modified discrete cosine transform (MDCT) domain are disclosed. In the apparatus and method, previous and current MDCT coefficients are used for obtaining a speech spectrum coefficient similar to a real speech spectrum, and a convex function is used for transforming the speech spectrum coefficient and obtaining a post-filter coefficient so that difference can increase in the case where the speech spectrum coefficient is small but decrease in the case where the coefficient is large. Then, the post-filter coefficient is applied to the MDCT coefficient. With this configuration, both the current and previous MDCT values are used, so that it is possible to obtain a spectrum coefficient similar to the real speech spectrum and to obtain a more accurate filter coefficient. Further, the coefficient is adaptively transformed through the convex function, thereby enhancing speech quality.