公开(公告)号：US06821890B2

公开(公告)日：2004-11-23

申请号：US09849530

申请日：2001-05-07

申请人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

发明人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.

摘要翻译： 通过提供介入的含锗层，差的粘附层如氮化硅和二氧化硅表现出改善的对铜构件的粘合性。 含锗层是锗锗化锗，氧化锗，氮化锗或其组合。 含锗层增强粘合性，使得不良粘附层不易受到铜构件的分层影响。

公开(公告)号：US06784516B1

公开(公告)日：2004-08-31

申请号：US09684463

申请日：2000-10-06

申请人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

发明人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

IPC分类号： H01L2900

CPC分类号： H01L23/544 ,  H01L23/5258 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.

公开(公告)号：US06271595B1

公开(公告)日：2001-08-07

申请号：US09231618

申请日：1999-01-14

申请人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

发明人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

IPC分类号： H01L21328

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium bitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.

摘要翻译： 通过提供介入的含锗层，差的粘附层如氮化硅和二氧化硅表现出改善的对铜构件的粘合性。 含锗层是锗锗，锗，锗或其组合。 含锗层增强粘合性，使得不良粘附层不易受到铜构件的分层影响。

公开(公告)号：US08026613B2

公开(公告)日：2011-09-27

申请号：US12113108

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。 使用包含粘合/反应阻挡层的双层球限制组合物，其中粘附/反应阻挡层既用作粘合层又用作反应阻挡层，粘合/反应阻挡层可以由选自 由Zr和ZrN组成的组。

公开(公告)号：US20090026587A1

公开(公告)日：2009-01-29

申请号：US10597038

申请日：2004-01-14

申请人： Matthew Angyal ,  Habib Hichri ,  Henry A. Nye, III ,  Dale McHerron ,  Jia Lee

发明人： Matthew Angyal ,  Habib Hichri ,  Henry A. Nye, III ,  Dale McHerron ,  Jia Lee

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

摘要： A dielectric layer for a semiconductor device having a low overall dielectric constant, good adhesion to the semiconductor substrate, and good resistance to cracking due to thermal cycling. The dielectric layer is made by a process involving continuous variation of dielectric material deposition conditions to provide a dielectric layer having a gradient of dielectric constant.

摘要翻译： 用于半导体器件的电介质层，其具有低的总体介电常数，对半导体衬底的良好的粘附性，以及由于热循环而具有良好的耐开裂性。 通过涉及介电材料沉积条件的连续变化以提供具有介电常数梯度的电介质层的工艺来制造电介质层。

公开(公告)号：US07410833B2

公开(公告)日：2008-08-12

申请号：US10815103

申请日：2004-03-31

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US07276296B2

公开(公告)日：2007-10-02

申请号：US11167277

申请日：2005-06-28

申请人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

发明人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

IPC分类号： B32B3/02 ,  B32B5/14 ,  B32B15/01

CPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2203/073 ,  Y10S428/936 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12708

摘要： A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

摘要翻译： 将第一金属通过将基底浸入包含第一金属和有机稀释剂的化合物的浴中而被镀在包含第二金属的基材上。 第二种金属比第一种金属更具有正电性。 在第一和第二金属的相图中，有机稀释剂的沸点高于共晶点。 该浴液在共晶点以上运行，但低于第二种金属的熔点。 例如，将铋浸渍在无铅锡基焊球上，随后通过无助焊回流重新分布。 还提供镀层结构。

公开(公告)号：US06946379B2

公开(公告)日：2005-09-20

申请号：US10860470

申请日：2004-06-03

申请人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

发明人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

IPC分类号： H01L23/525 ,  H01L23/544 ,  H01L21/44

CPC分类号： H01L23/544 ,  H01L23/5258 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.

摘要翻译： 一种具有形成在其中的至少一个熔丝和对准标记的半导体器件。 在熔断器和对准标记的表面上的抗蚀刻层，其提供与激光熔丝删除工艺结合使用的均匀的钝化厚度。

公开(公告)号：US06900142B2

公开(公告)日：2005-05-31

申请号：US10604560

申请日：2003-07-30

申请人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

发明人： Emanual I. Cooper ,  John M. Cotte ,  Lisa A. Fanti ,  David E. Eichstadt ,  Stephen J. Kilpatrick ,  Henry A. Nye, III ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

摘要翻译： 提供了一种在电子部件如半导体晶片制造焊料互连件中去除暴露的种子层的方法，而不会损坏互连或下面的晶片衬底并以高的晶片产量。 焊料互连是无铅的或基本上无铅的，并且通常含有Sn。 在蚀刻步骤之后，使用草酸溶液接触晶片以除去部分种子层。 种子层通常是含Cu层，其具有包含阻挡金属如Ti，Ta和W的下阻挡层。在蚀刻后保留下阻挡层，并且草酸溶液抑制在阻挡层表面上形成Sn化合物 化合物可以掩蔽阻挡层和阻挡层蚀刻剂，导致晶片表面上不完全的阻挡层去除。 任何残留的导电阻挡层可能导致短路和其他晶片问题，并导致较低的晶圆产量。 优选去除电子蚀刻以去除覆盖在下阻挡层上的种子层的部分。

公开(公告)号：US5629564A

公开(公告)日：1997-05-13

申请号：US392718

申请日：1995-02-23

申请人： Henry A. Nye, III ,  Jeffrey F. Roeder ,  Ho-Ming Tong ,  Paul A. Totta

发明人： Henry A. Nye, III ,  Jeffrey F. Roeder ,  Ho-Ming Tong ,  Paul A. Totta

IPC分类号： H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L24/11 ,  H01L24/12 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/19041

摘要： A structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

摘要翻译： 公开了一种用于改进的焊接端子的结构。 改进的焊接端子由底部金属粘附层，粘附层顶部的CrCu中间层，CrCu层上方的焊料接合层和焊料顶层制成。 粘合层是TiW或TiN。 用于制造改进的终端金属的方法包括在粘合剂层上沉积粘合金属层，CrCu层和焊料接合材料层，在选择区域上形成焊料层，并且使用焊料蚀刻下面的层 区域作为掩模。