公开(公告)号：US20090026587A1

公开(公告)日：2009-01-29

申请号：US10597038

申请日：2004-01-14

申请人： Matthew Angyal ,  Habib Hichri ,  Henry A. Nye, III ,  Dale McHerron ,  Jia Lee

发明人： Matthew Angyal ,  Habib Hichri ,  Henry A. Nye, III ,  Dale McHerron ,  Jia Lee

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

摘要： A dielectric layer for a semiconductor device having a low overall dielectric constant, good adhesion to the semiconductor substrate, and good resistance to cracking due to thermal cycling. The dielectric layer is made by a process involving continuous variation of dielectric material deposition conditions to provide a dielectric layer having a gradient of dielectric constant.

摘要翻译： 用于半导体器件的电介质层，其具有低的总体介电常数，对半导体衬底的良好的粘附性，以及由于热循环而具有良好的耐开裂性。 通过涉及介电材料沉积条件的连续变化以提供具有介电常数梯度的电介质层的工艺来制造电介质层。

公开(公告)号：US06908841B2

公开(公告)日：2005-06-21

申请号：US10251453

申请日：2002-09-20

申请人： Lloyd G. Burrell ,  Douglas Kemerer ,  Henry A. Nye, III ,  Hans-Joachim Barth ,  Emmanuel F. Crabbe ,  David Anderson ,  Joseph Chan

发明人： Lloyd G. Burrell ,  Douglas Kemerer ,  Henry A. Nye, III ,  Hans-Joachim Barth ,  Emmanuel F. Crabbe ,  David Anderson ,  Joseph Chan

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05546 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device (200) having support structures (218, 226, 236) beneath wirebond regions (214) of contact pads (204) and a method of forming same. Low modulus dielectric layers (216, 222, 232) are disposed over a workpiece (212). Support structures (218, 226, 236) are formed in the low modulus dielectric layers (216, 222, 232), and support vias (224, 234) are formed between the support structures (218, 226, 236). A high modulus dielectric film (220, 230) is disposed between each low modulus dielectric layer (216, 222, 232), and a high modulus dielectric layer (256) is disposed over the top low modulus dielectric layer (232). Contact pads (204) are formed in the high modulus dielectric layer (256). Each support via (234) within the low modulus dielectric layer (232) resides directly above a support via (224) in the underlying low modulus dielectric layer (222), to form a plurality of via support stacks within the low modulus dielectric layers (216, 222, 232).

摘要翻译： 一种在接触焊盘（204）的引线键合区域（214）下方具有支撑结构（218,226,236）的半导体器件（200）及其形成方法。 低模量介电层（216,222,232）设置在工件（212）上方。 支撑结构（218,226,236）形成在低模量电介质层（216,222,232）中，并且支撑通孔（224,234）形成在支撑结构（218,226,236）之间。 高模量介电膜（220,230）设置在每个低模量介电层（216,222,232）之间，并且高模量介电层（256）设置在顶部低模量介电层（232）之上。 接触焊盘（204）形成在高模量介电层（256）中。 在低模量介电层（232）内的每个支撑件（234）直接位于下面的低模量介电层（222）中的支撑通孔（224）的上方，以在低模量介电层（222）内形成多个通孔支撑堆叠 216,222,232）。

公开(公告)号：US07517736B2

公开(公告)日：2009-04-14

申请号：US11307642

申请日：2006-02-15

申请人： Sanjay C. Mehta ,  Daniel C. Edelstein ,  John A. Fitzsimmons ,  Stephan Grunow ,  Henry A. Nye, III ,  David L. Rath

发明人： Sanjay C. Mehta ,  Daniel C. Edelstein ,  John A. Fitzsimmons ,  Stephan Grunow ,  Henry A. Nye, III ,  David L. Rath

IPC分类号： H01L21/82 ,  H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided that enable the ability to use a less aggressive liner processes, while producing structures known to give a desired high stress migration and electro-migration reliability. The present invention circumvents the issue of sputter damage of low k (on the order of 3.2 or less) dielectric by creating the via “anchors” (interlocked and interpenetrated vias) through chemical means. This allows the elimination or significant reduction of the sputter-etching process used to create the via penetration (“drilling, gouging”) into the line below in the barrier/seed metallization step. The present invention achieves the above, while maintaining a reliable copper fill and device structure.

摘要翻译： 提供了使得能够使用较不积极的衬里工艺的能力，同时产生已知具有期望的高应力迁移和电迁移可靠性的结构。 本发明通过化学方法制造通孔“锚”（互锁和相互穿透的通孔）来规避低k（约3.2以下）电介质的溅射损伤问题。 这允许在阻挡/种子金属化步骤中消除或显着减少用于在下面的线中产生通孔穿透（“钻孔，气刨”）的溅射蚀刻工艺。 本发明实现上述，同时保持可靠的铜填充和装置结构。

公开(公告)号：US07273803B2

公开(公告)日：2007-09-25

申请号：US10724938

申请日：2003-12-01

申请人： Yu-Ting Cheng ,  Stefanie Ruth Chiras ,  Donald W. Henderson ,  Sung-Kwon Kang ,  Stephen James Kilpatrick ,  Henry A. Nye, III ,  Carlos J. Sambucetti ,  Da-Yuan Shih

发明人： Yu-Ting Cheng ,  Stefanie Ruth Chiras ,  Donald W. Henderson ,  Sung-Kwon Kang ,  Stephen James Kilpatrick ,  Henry A. Nye, III ,  Carlos J. Sambucetti ,  Da-Yuan Shih

IPC分类号： H01L21/44

CPC分类号： B32B15/01 ,  Y10T428/12528 ,  Y10T428/31681

摘要： A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.

摘要翻译： 限球冶金包括基板，在基板上形成的阻挡层，形成在阻挡层上的粘合层，形成在粘合层上的第一可焊层，形成在粘合层上的扩散阻挡层，以及第二可焊接 层形成在扩散阻挡层上。

公开(公告)号：US07923849B2

公开(公告)日：2011-04-12

申请号：US12113152

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US07037559B2

公开(公告)日：2006-05-02

申请号：US10426725

申请日：2003-05-01

申请人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

发明人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

IPC分类号： C25D3/54 ,  C22C12/00 ,  B05D1/18 ,  B05D7/17 ,  B05D7/21

CPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2203/073 ,  Y10S428/936 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12708

摘要： A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

摘要翻译： 将第一金属通过将基底浸入包含第一金属和有机稀释剂的化合物的浴中而被镀在包含第二金属的基材上。 第二种金属比第一种金属更具有正电性。 在第一和第二金属的相图中，有机稀释剂的沸点高于共晶点。 该浴液在共晶点以上运行，但低于第二种金属的熔点。 例如，将铋浸渍在无铅锡基焊球上，随后通过无助焊回流重新分布。 还提供镀层结构。

公开(公告)号：US06261945B1

公开(公告)日：2001-07-17

申请号：US09501649

申请日：2000-02-10

申请人： Henry A. Nye, III ,  Vincent J. McGahay ,  Kurt A. Tallman

发明人： Henry A. Nye, III ,  Vincent J. McGahay ,  Kurt A. Tallman

IPC分类号： H01L214763

CPC分类号： H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A copper-interconnect, low-K dielectric integrated circuit has reduced corrosion of the interconnect when the crackstop next to the kerf is also used as the primacy barrier to oxygen diffusion through the dielectric, with corresponding elements of the crackstop being constructed simultaneously with the circuit interconnect elements; e.g. horizontal interconnect elements have a corresponding structure in the crackstop and vias between interconnect layers have corresponding structures in the crackstop.

摘要翻译： 当铜线互连低K电介质集成电路当切口旁边的裂缝也被用作通过电介质的氧扩散的主要障碍时，互连的腐蚀减弱，裂缝的相应元件与电路同时构成 互连元件; 例如 水平互连元件在断裂器中具有相应的结构，并且互连层之间的通孔在裂缝挡板中具有对应的结构。

公开(公告)号：US20120012642A1

公开(公告)日：2012-01-19

申请号：US13244576

申请日：2011-09-25

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： B23K35/14 ,  B23K35/24

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。 使用包含粘合/反应阻挡层的双层球限制组合物，其中粘附/反应阻挡层既用作粘合层又用作反应阻挡层，粘合/反应阻挡层可以由选自 由Zr和ZrN组成的组

公开(公告)号：US06821890B2

公开(公告)日：2004-11-23

申请号：US09849530

申请日：2001-05-07

申请人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

发明人： Vincent J. McGahay ,  Thomas H. Ivers ,  Joyce C. Liu ,  Henry A. Nye, III

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.

摘要翻译： 通过提供介入的含锗层，差的粘附层如氮化硅和二氧化硅表现出改善的对铜构件的粘合性。 含锗层是锗锗化锗，氧化锗，氮化锗或其组合。 含锗层增强粘合性，使得不良粘附层不易受到铜构件的分层影响。

公开(公告)号：US06784516B1

公开(公告)日：2004-08-31

申请号：US09684463

申请日：2000-10-06

申请人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

发明人： Timothy H. Daubenspeck ,  Thomas L. McDevitt ,  William T. Motsiff ,  Henry A. Nye, III

IPC分类号： H01L2900

CPC分类号： H01L23/544 ,  H01L23/5258 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.