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    CAMPTOTHECIN COMPOUND CONTAINING STABLE 7-MEMBERED LACTONE RING, PREPARATION METHOD AND USE
    14.
    发明申请
    CAMPTOTHECIN COMPOUND CONTAINING STABLE 7-MEMBERED LACTONE RING, PREPARATION METHOD AND USE 有权
    包含稳定的7会员手环的化合物，制备方法和用途

    公开(公告)号：US20140128421A1

    公开(公告)日：2014-05-08

    申请号：US14112583

    申请日：2012-04-13

    申请人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    发明人： Wei Lv ,  Shanbao Yu ,  Yu Luo ,  Yi Chen ,  Jian Ding

    IPC分类号： C07D491/22

    CPC分类号： C07D491/22

    摘要： Provided are a camptothecin compound containing 7-membered lactone ring, as shown in general formula I, and pharmaceutically acceptable salt thereof, as well as the preparation method and use thereof. In general formula I, R1 is H, a C1˜C3 alkyl, acetyl or propionyl; R2 is H, a C1˜C6 alkyl, a C3˜C6 cycloalkyl, piperidyl; or a C1˜C6 alkyl substituted by an amino; R3 is H, a C1˜C3 alkyl, or a C1˜C6 alkyl substituted by an amino; R4 is H, a hydroxyl, or a C1˜C6 alkoxy; R5 is H, or a C1˜C6 alkoxyl; or R4 and R5 are linked to each other to form —OCH2O— or —OCH2CH2O—. The compound has good anti-tumor activity, and can be clinically used via oral administration, intravenous injection, and intramuscular injection, among others.

    摘要翻译： 提供了如通式I所示的含有7-元内酯环的喜树碱化合物及其药学上可接受的盐以及其制备方法和用途。 在通式Ⅰ中，R 1是H，C 1 -C 3烷基，乙酰基或丙酰基; R2是H，C1〜C6烷基，C3〜C6环烷基，哌啶基; 或被氨基取代的C 1-6烷基; R3是H，C1〜C3烷基或被氨基取代的C1〜C6烷基; R4是H，羟基或C1〜C6烷氧基; R5是H或C1〜C6烷氧基; 或R 4和R 5彼此连接形成-OCH 2 O-或-OCH 2 CH 2 O-。 该化合物具有良好的抗肿瘤活性，可以通过口服给药，静脉内注射和肌内注射等临床使用。

    FLUIDICS DEVICE
    15.
    发明申请
    FLUIDICS DEVICE 有权
    流体装置

    公开(公告)号：US20120309644A1

    公开(公告)日：2012-12-06

    申请号：US13552356

    申请日：2012-07-18

    申请人： Lee O. Lomas ,  Jian Ding ,  Egisto Boschetti

    发明人： Lee O. Lomas ,  Jian Ding ,  Egisto Boschetti

    IPC分类号： C40B30/04 ,  G01N27/447 ,  B01D15/42 ,  F17D1/00

    CPC分类号： G01N30/461 ,  B01D15/325 ,  B01D15/362 ,  B01D15/363 ,  B01L3/5025 ,  B01L3/50255 ,  B01L3/563 ,  B01L2200/026 ,  B01L2200/028 ,  B01L2300/0681 ,  B01L2300/0829 ,  B01L2300/087 ,  B01L2400/0487 ,  C07K1/34 ,  G01N27/44704 ,  G01N27/44795 ,  G01N30/466 ,  G01N30/468 ,  Y10T137/2224 ,  Y10T137/794 ,  Y10T137/86187 ,  Y10T436/255

    摘要： The present invention contemplates various devices that are configured to separate a sample, which contains more than one unique species, into any desired number of sub-samples by passing the sample across a like number of separation media configured for a first separation protocol. Each of the sub-samples may be further separated by an additional separation protocol, thereby creating a plurality of mini-samples, each of which may be further separated and/or analyzed. The invention also contemplates using a simple method of using conduits to form a fluid path that passes through a plurality of separation media, each of which media is configured to isolate a particular sub-sample. After various sub-samples of the sample are isolated by the various separation media, the conduits may be removed, thereby enabling each of the isolated sub-samples to be further separated and/or analyzed independent of any other sub-sample.

    摘要翻译： 本发明考虑了通过将样品穿过配置用于第一分离方案的相似数量的分离介质，将被配置成将含有多于一种独特物种的样品分离成任何所需数量的子样品的各种装置。 每个子样品可以通过另外的分离方案进一步分离，从而产生多个微型样品，每个小样品可进一步分离和/或分析。 本发明还考虑使用简单的方法来使用导管来形成通过多个分离介质的流体路径，其中每个介质被配置为隔离特定的子样品。 在通过各种分离介质分离样品的各种亚样品之后，可以去除导管，从而使每个分离的子样品能够独立于任何其它亚样品进一步分离和/或分析。

    Process for etching a metal layer suitable for use in photomask fabrication
    16.
    发明授权
    Process for etching a metal layer suitable for use in photomask fabrication 有权
    用于蚀刻适用于光掩模制​​造的金属层的工艺

    公开(公告)号：US08202441B2

    公开(公告)日：2012-06-19

    申请号：US12728455

    申请日：2010-03-22

    申请人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

    发明人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

    IPC分类号： C03C15/00

    CPC分类号： C03C17/06 ,  C03C2217/26 ,  C03C2218/33 ,  C03C2218/34 ,  C23F4/00 ,  G03F1/54 ,  G03F1/80 ,  H01J37/321 ,  H01J2237/3341

    摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

    摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

    Triptolide Derivatives And Their Uses
    18.
    发明申请
    Triptolide Derivatives And Their Uses 有权
    雷公藤内酯衍生物及其用途

    公开(公告)号：US20070197476A1

    公开(公告)日：2007-08-23

    申请号：US10540908

    申请日：2003-01-28

    申请人： Yuanchao Li ,  Jianping Zuo ,  Fan Zhang ,  Ru Zhou ,  Jian Ding

    发明人： Yuanchao Li ,  Jianping Zuo ,  Fan Zhang ,  Ru Zhou ,  Jian Ding

    IPC分类号： A61K31/675 ,  A61K31/365 ,  C07D493/22

    CPC分类号： C07D493/22 ,  A61K31/34

    摘要： The invention relates to triptolide derivatives of Formula (I), their pharmaceutically acceptable salts and optical isomers, Formula (I): wherein, C5 and C6 connect with each other by a C—C single bond or double bond; when C5 and C6 are connected with C—C single bond, X and Y represents independently hydrogen, oxygen, hydroxyl, halogen, lower alkyl-oxy, lower alkyl-amino, mercapto, lower alkyl-thio, the group of formula —OCOR, —OSO2R or —OPO(OH)2, each of which is attached to C5 and C6, R represents —(CH2)nCO2Na, —(CO2)nCO2K, or —(CH2)nCH3, wherein n=1-6; Z represents hydrogen, oxygen, hydroxyl, halogen, lower alkyl-oxy, lower alkyl-amino, mercapto, lower alkyl-thio, the group of formula —OCOR, —OSO2R or —OPO(OH)2, each of which is linked at C14-position, R represents —(CH2)nCO2Na, —(CO2)nCO2K, or —(CH2)nCH2, wherein n=1-6; wherein, the “_” linked with X, Y, and Z represents “” or “”, but X and Y cannot both be hydrogen atom at the same time, the methods for preparing them and their use as antiphlogistic agent, immunosuppressive agent or therapeutic agent for other related diseases.

    摘要翻译： 本发明涉及式（I）的雷公藤内酯衍生物，其药学上可接受的盐和旋光异构体，式（I）：其中C5和C6通过C-C单键或双键相互连接; 当C5和C6与CC单键连接时，X和Y独立地表示氢，氧，羟基，卤素，低级烷基氧基，低级烷基 - 氨基，巯基，低级烷基 - 硫基，式-OCOR基团，-OSO （OH）2 N，其各自与C5和C6连接，R表示 - （CH 2）nCO 2， Na 2， - （CO 2）n CO 2 K，或 - （CH 2 2）n CH 3 其中n = 1-6; Z代表氢，氧，羟基，卤素，低级烷基 - 氧基，低级烷基 - 氨基，巯基，低级烷基 - 硫基，式-OCOR，-OSO 2 R或-OPO（OH ）2，其各自在C14位连接，R表示 - （CH 2）n CO 2 Na， - （CO 2 N 2）n CO 2 K，或 - （CH “或”“，但X和Y不能同时为氢原子， 制备它们及其用作消炎剂，免疫抑制剂或其他相关疾病的治疗剂。

    Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
    19.
    发明授权
    Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control 有权
    用于前馈和反馈过程控制的集成相位角和光学关键尺寸测量计量

    公开(公告)号：US07250309B2

    公开(公告)日：2007-07-31

    申请号：US10754321

    申请日：2004-01-09

    申请人： Alfred W. Mak ,  Yung-Hee Yvette Lee ,  Cynthia B. Brooks ,  Melisa J. Buie ,  Turgut Sahin ,  Jian Ding

    发明人： Alfred W. Mak ,  Yung-Hee Yvette Lee ,  Cynthia B. Brooks ,  Melisa J. Buie ,  Turgut Sahin ,  Jian Ding

    IPC分类号： G01R31/26

    CPC分类号： G03F1/32 ,  G03F1/30

    摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

    摘要翻译： 用于控制关键尺寸和监测光掩模相移角的方法和装置。 晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。 晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。 如果需要附加蚀刻，则实时处理配方调整和确定允许过程控制的紧固。 相移角和均匀性监测允许在线筛选相移光掩模。

    Plasma etch process in a single inter-level dielectric etch
    20.
    发明授权
    Plasma etch process in a single inter-level dielectric etch 失效
    在单层电介质蚀刻中的等离子体蚀刻工艺

    公开(公告)号：US06399511B2

    公开(公告)日：2002-06-04

    申请号：US09728294

    申请日：2000-12-01

    申请人： Betty Tang ,  Jian Ding

    发明人： Betty Tang ,  Jian Ding

    IPC分类号： H01L213065

    CPC分类号： H01L21/76807 ,  H01L21/31116

    摘要： A dielectric etch process applicable etching a dielectric layer with an underlying stop layer. It is particularly though not necessarily applicable to forming a dual-damascene interconnect structure by a counterbore process, in which a deep via is etched prior to the formation of a trench connecting two of more vias. A single metallization fills the dual-damascene structure. The substrate is formed with a lower stop layer, a lower dielectric layer, an upper stop layer, and an upper dielectric layer. For example, the dielectric layers may be silicon dioxide, and the stop layers, silicon nitride. The initial deep via etch includes at least two substeps. A first substep includes a non-selective etch through the upper stop layer followed by a second substep of selectively etching through the lower dielectric layer and stopping on the lower stop layer. The first substep may be preceded by yet another substep including a selective etch part ways through the upper dielectric layer. For the oxide/nitride compositions, the selective etch is based on a fluorocarbon and argon chemistry, preferably with a lean etchant of CHF3 combined with a polymer former, such as C2F6, C4F8, or CH2F2, and the non-selective etch includes a fluorocarbon or hydrocarbon, argon and an oxygen-containing gas, such as CO. The counterbore etch is preferably performed in a high-density plasma reactor which allows the plasma source region to be powered separately from a sheath bias located adjacent to the wafer pedestal.

    摘要翻译： 电介质蚀刻工艺可以用下面的停止层蚀刻电介质层。 特别地，不一定适用于通过沉孔工艺形成双镶嵌互连结构，其中在形成连接两个更多通孔的沟槽之前蚀刻深通孔。 单一的金属化填充了双镶嵌结构。 衬底形成有下停止层，下介电层，上阻挡层和上电介质层。 例如，电介质层可以是二氧化硅，并且阻挡层，氮化硅。 初始深通孔蚀刻包括至少两个子步骤。 第一子步骤包括通过上停止层的非选择性蚀刻，然后是选择性蚀刻穿过下介电层并停止在下停止层上的第二子步骤。 第一子步骤之前可以有另一子步骤，其中包括通过上电介质层的选择性蚀刻部分。 对于氧化物/氮化物组合物，选择性蚀刻基于碳氟化合物和氩气化学，优选用与聚合物形成剂如C 2 F 6，C 4 F 8或CH 2 F 2结合的CHF 3的贫蚀刻剂，并且非选择性蚀刻包括碳氟化合物 或烃，氩气和含氧气体，例如CO。沉孔蚀刻优选在高密度等离子体反应器中进行，其允许等离子体源区域与位于晶片基座附近的护套偏压分开供电。