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11.发明授权Providing current control over wafer borne semiconductor devices using trenches 有权提供使用沟槽的晶圆传输半导体器件的电流控制公开(公告)号：US08129253B2
公开(公告)日：2012-03-06
申请号：US10486780
申请日：2002-08-12
IPC分类号： H01L21/76
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了一种用于向具有衬底（1520），至少一个有源层（1565）和表面层（1510）的半导体晶片（1500）提供晶片寄生电流控制的方法以及形成在所述表面层上的电触头（1515） （1510）。 可以通过在电触点周围形成沟槽（1525）来实现电流控制，其中电触点和相关层限定电子装置。 绝缘植入物（1530）可以放置在沟槽（1525）中，并且可以在电子触点（1515）之间形成牺牲层（1540）。 沟槽通过促进在有源（例如，导电）区域（1560）内的电流流动并阻止电流通过非活性（例如非导电）区域（1550）来控制电流。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的电流控制很重要。
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12.发明授权Vertical cavity surface emitting laser with photodiode having reduced spontaneous emissions 有权具有减少自发辐射的光电二极管的垂直腔表面发射激光器公开(公告)号：US07801199B2
公开(公告)日：2010-09-21
申请号：US11026495
申请日：2004-12-30
申请人： James K. Guenter , Jimmy A. Tatum , James R. Biard
发明人： James K. Guenter , Jimmy A. Tatum , James R. Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/0422 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。
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公开(公告)号：US07229754B2
公开(公告)日：2007-06-12
申请号：US11286621
申请日：2005-11-23
申请人： Laszlo B. Kish , Maria Dobozi-King , Ryland Young , Mosong Cheng , James R. Biard , Sergey Bezrukov
发明人： Laszlo B. Kish , Maria Dobozi-King , Ryland Young , Mosong Cheng , James R. Biard , Sergey Bezrukov
IPC分类号： C12Q1/70
CPC分类号： B82Y30/00 , B01L3/5088 , C12N7/00 , C12N2795/10311 , C12N2795/10322 , C12N2799/00 , C12Q1/04 , C12Q1/6825 , C12Q1/689 , G01N33/48707 , G01N33/54373 , G01N33/56911
摘要： The present invention provides a method for detecting bacteria and a nano-well device having one or more input/output connections about a gap and one or more bacteriophages at or about the gap that trigger a detectable electrical field fluctuation when the one or more bacteriophages contact a cognate target within a liquid sample.
摘要翻译： 本发明提供一种用于检测细菌的方法和具有一个或多个输入/输出连接的纳米孔装置，所述输入/输出连接围绕间隙和在间隙处或周围的一个或多个噬菌体，当一个或多个噬菌体接触时触发可检测的电场波动 液体样品中的同源靶标。
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公开(公告)号：US07065124B2
公开(公告)日：2006-06-20
申请号：US10767920
申请日：2004-01-29
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/18308 , H01S5/2009 , H01S5/205 , H01S5/3211 , H01S5/423 , H01S2301/166
摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。
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15.发明授权Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region 失效利用在三极管区工作的耗尽型FET和在饱和区工作的耗尽型FET
公开(公告)号：US4661726A
公开(公告)日：1987-04-28
申请号：US793379
申请日：1985-10-31
申请人： James R. Biard
发明人： James R. Biard
IPC分类号： H03K19/0952 , H03K19/003 , H03K19/0956 , H03K17/14 , H03K19/094
CPC分类号： H03K19/00384
摘要： A temperature compensation system for semiconductor logic gates where the temperature compensation is accomplished by two depletion mode FET's in electrical series relationship is disclosed. One of the FET's is adapted to operate in its triode region of operation and the other in its saturation region of operation.
摘要翻译： 公开了一种用于半导体逻辑门的温度补偿系统，其中温度补偿由电气串联关系的两个耗尽型FET实现。 其中一个FET适用于其三极管工作区域，另一个在其饱和运行区域。
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公开(公告)号：US4529947A
公开(公告)日：1985-07-16
申请号：US617138
申请日：1984-06-04
申请人： James R. Biard , Ben R. Elmer
发明人： James R. Biard , Ben R. Elmer
IPC分类号： H01L27/08 , H04B10/152 , H03F3/45
CPC分类号： H01L27/0802
摘要： A differential stage of an amplifier includes an input transistor and a second transistor with a significantly greater emitter cross-sectional area than the input transistor. Quiescent emitter current is divided between the two transistors in substantially the same ratio as the emitter cross-sectional areas so that the emitter current densities are substantially equal.
摘要翻译： 放大器的差分级包括输入晶体管和具有比输入晶体管显着更大的发射极横截面面积的第二晶体管。 静态发射极电流在两个晶体管之间以与发射极横截面积基本相同的比例分压，使得发射极电流密度基本相等。
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公开(公告)号：US07709358B2
公开(公告)日：2010-05-04
申请号：US11778603
申请日：2007-07-16
申请人： James Guenter , James R. Biard
发明人： James Guenter , James R. Biard
IPC分类号： H01L31/20
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0264 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358
摘要： Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.
摘要翻译： 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器（VCSEL）或谐振腔发光二极管（RCLED）的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。
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公开(公告)号：US07662650B2
公开(公告)日：2010-02-16
申请号：US10486666
申请日：2002-08-12
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了用于向具有衬底（1720），至少一个有源层（1765）和至少一个表面层（1710）的半导体晶片（1700）提供晶片光子流控制的方法。 可以通过形成在所述晶片（1700）中形成的沟槽（1725）和/或绝缘植入物（1730）来实现光子流控制，由此有源区域（1760）由作为非导电区域（1750）的沟槽（1725）限定 ）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的光子流量控制很重要。
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公开(公告)号：US07418021B2
公开(公告)日：2008-08-26
申请号：US11026355
申请日：2004-12-30
申请人： James K. Guenter , Jimmy A. Tatum , James R. Biard
发明人： James K. Guenter , Jimmy A. Tatum , James R. Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。
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公开(公告)号：US06558973B2
公开(公告)日：2003-05-06
申请号：US09766797
申请日：2001-01-22
IPC分类号： H01L2100
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.
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