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    Method for Producing a Semiconductor Device
    12.
    发明申请
    Method for Producing a Semiconductor Device 有权
    制造半导体器件的方法

    公开(公告)号：US20120289023A1

    公开(公告)日：2012-11-15

    申请号：US13365774

    申请日：2012-02-03

    申请人： Carsten Ahrens ,  Rudolf Berger ,  Manfred Frank ,  Uwe Hoeckele ,  Bernhard Knott ,  Ulrich Krumbein ,  Wolfgang Lehnert ,  Berthold Schuderer ,  Juergen Wagner ,  Stefan Willkofer

    发明人： Carsten Ahrens ,  Rudolf Berger ,  Manfred Frank ,  Uwe Hoeckele ,  Bernhard Knott ,  Ulrich Krumbein ,  Wolfgang Lehnert ,  Berthold Schuderer ,  Juergen Wagner ,  Stefan Willkofer

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  H01L21/762 ,  H01L21/76232 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3185 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

    摘要翻译： 一种制造具有侧壁绝缘体的半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的半导体本体。 至少一个第一沟槽至少部分地填充有绝缘材料，该绝缘材料从朝向第二侧的方向的第一侧进入半导体本体。 在第一半导体器件的第一半导体体区域和第二半导体器件的第二半导体本体区域之间产生至少一个第一沟槽。 隔离沟槽从半导体本体的第一侧沿第一和第二半导体主体区域之间的半导体本体的第二侧的方向延伸，使得第一沟槽的绝缘材料的至少一部分至少邻接 隔离沟槽的侧壁。 半导体主体的第二面部分地被去除到隔离沟槽的一侧。

    Semiconductor structure comprising a magnetoresistor
    13.
    发明授权
    Semiconductor structure comprising a magnetoresistor 有权
    包括磁电阻的半导体结构

    公开(公告)号：US06949797B2

    公开(公告)日：2005-09-27

    申请号：US10769458

    申请日：2004-01-30

    申请人： Ulrich Krumbein ,  Hans Taddiken

    发明人： Ulrich Krumbein ,  Hans Taddiken

    IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/402 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure comprises a substrate and a source region formed in the substrate. Further, a drain region is formed in the substrate. The drain region comprises a first drain portion with a first doping concentration and a second drain portion with a second doping concentration, which is lower than the first doping concentration. Between the source region and the second drain portion a channel region is defined. Further, a field plate is provided, which is disposed across the junction between the first drain portion and the second drain portion to reduce the gradient of the electrical field at the junction.

    摘要翻译： 半导体结构包括衬底和形成在衬底中的源极区域。 此外，在衬底中形成漏区。 漏极区域包括具有第一掺杂浓度的第一漏极部分和具有低于第一掺杂浓度的第二掺杂浓度的第二漏极部分。 在源极区域和第二漏极部分之间限定沟道区域。 此外，设置场板，其设置在第一漏极部分和第二漏极部分之间的接合处，以减小接合处的电场的梯度。

    Field effect transistor
    17.
    发明授权
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号：US07202529B2

    公开(公告)日：2007-04-10

    申请号：US10798720

    申请日：2004-03-11

    申请人： Ulrich Krumbein ,  Hans Taddiken

    发明人： Ulrich Krumbein ,  Hans Taddiken

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L29/1095 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/7835

    摘要： A field effect transistor includes a substrate having a doping of a first conductivity type, a drain area in the substrate having a doping of a second conductivity type oppposite the first conductivity type, a source area in the substrate being laterally spaced from the drain area and having a doping of the second conductivity type, and a channel area in the substrate that is arranged between the source area and the drain area. In a portion of the substrate bordering the drain area, an area having a doping of the second conductivity type, which is connected to the drain area, is arranged such that in the portion alternating regions having the first conductivity type and having the second conductivity type are arranged.

    摘要翻译： 场效应晶体管包括具有第一导电类型的掺杂的衬底，衬底中的漏极区域具有与第一导电类型相反的第二导电类型的掺杂，衬底中的源极区域与漏极区域横向间隔开;以及 具有第二导电类型的掺杂，以及布置在源极区域和漏极区域之间的衬底中的沟道区域。 在与漏极区域接触的衬底的一部分中，连接到漏区的具有掺杂第二导电类型的区域被布置成使得在具有第一导电类型且具有第二导电类型的部分交替区域中 被安排。

    Semiconductor circuit arrangement and a method for producing same
    19.
    发明授权
    Semiconductor circuit arrangement and a method for producing same 有权
    半导体电路装置及其制造方法

    公开(公告)号：US06852585B2

    公开(公告)日：2005-02-08

    申请号：US10148379

    申请日：2000-11-30

    申请人： Christian Herzum ,  Ulrich Krumbein ,  Karl-Heinz Mueller

    发明人： Christian Herzum ,  Ulrich Krumbein ,  Karl-Heinz Mueller

    IPC分类号： H01L21/336 ,  H01L27/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/8238

    CPC分类号： H01L29/66484 ,  H01L27/0629 ,  H01L29/1079 ,  H01L29/7831

    摘要： A semiconductor circuit arrangement includes a circuit element embedded in a semiconductor substrate of a first conductivity type in an integrated manner and is provided with at least one gate electrode and first and second terminal electrodes. The first terminal electrode includes a well region that is embedded in the semiconductor substrate and is of a second conductivity type which is opposite the first conductivity type. A sub-well region is embedded in the well region of the first terminal electrode and is of the second conductivity type and has a higher doping than said well region. The sub-well region is embedded in the surface of the substrate and ends without reaching a well region of the gate electrode which is of the first conductivity type.

    摘要翻译： 半导体电路装置包括以一体化方式嵌入第一导电类型的半导体衬底中的电路元件，并且设置有至少一个栅极电极和第一和第二端子电极。 第一端子电极包括嵌入在半导体衬底中且与第一导电类型相反的第二导电类型的阱区。 子阱区域嵌入在第一端子电极的阱区域中并且是第二导电类型并且具有比所述阱区域更高的掺杂。 子阱区域嵌入在衬底的表面中并且结束而不到达第一导电类型的栅电极的阱区。