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公开(公告)号：US10014401B2
公开(公告)日：2018-07-03
申请号：US15414156
申请日：2017-01-24
发明人： Jeho Na , Hyung Seok Lee , Chi Hoon Jun , Sang Choon Ko , Myungjoon Kwack , Young Rak Park , Woojin Chang , Hyun-Gyu Jang , Dong Yun Jung
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L23/31 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7787 , H01L23/315 , H01L23/3171 , H01L23/3178 , H01L23/3192 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42364 , H01L29/42372 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
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公开(公告)号：US09905654B2
公开(公告)日：2018-02-27
申请号：US15215414
申请日：2016-07-20
发明人： Dong Yun Jung , Hyun Soo Lee , Sang Choon Ko , Minki Kim , Jeho Na , Eun Soo Nam , Young Rak Park , Junbo Park , Hyung Seok Lee , Hyun-Gyu Jang , Chi Hoon Jun
IPC分类号： H01L29/205 , H01L29/66 , H01L29/872 , H01L29/20
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/66212 , H01L29/872
摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.
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公开(公告)号：US09748941B2
公开(公告)日：2017-08-29
申请号：US15223826
申请日：2016-07-29
发明人： Minki Kim , Hyun-Gyu Jang , Dong Yun Jung , Sang Choon Ko , Hyun Soo Lee , Chi Hoon Jun
IPC分类号： H03K17/081 , H01L29/778 , H01L27/088 , H01L29/20
CPC分类号： H03K17/08104 , H01L27/0883 , H01L29/2003 , H01L29/41758 , H01L29/42316 , H01L29/778 , H01L29/7786 , H03K17/102 , H03K2017/6875
摘要： Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
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公开(公告)号：US09337121B2
公开(公告)日：2016-05-10
申请号：US14324724
申请日：2014-07-07
发明人： Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Woojin Chang , Sung-Bum Bae , Young Rak Park , Je Ho Na , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L23/367 , H01L21/308 , H01L23/473 , H01L23/467 , H01L21/3065 , H01L21/3205
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/32051 , H01L23/367 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：设置在衬底上的有源区; 入口通道形成为隐藏在所述基板的一侧中的单个腔; 出口通道形成为埋在基板的另一侧中的单个腔; 微通道阵列，其包括多个微通道，其中所述多个微通道形成为埋在所述衬底中的多个空腔，并且所述微通道阵列的一端连接到所述入口通道的一侧，而另一端 的微通道阵列连接到出口通道的一侧; 以及将微通道彼此分离的微型散热器阵列。
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公开(公告)号：US09024511B2
公开(公告)日：2015-05-05
申请号：US13864341
申请日：2013-04-17
发明人： Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Kwang-Seong Choi
IPC分类号： H01L41/09 , H01L41/113
CPC分类号： H01L41/1136 , H02N2/186
摘要： The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
摘要翻译： 本发明构思公开了一种冲击式压电微型发电机。 冲击型压电微型发电机可以包括具有空腔的基座和与空腔相邻的至少一个止动区域; 固定在基座上的框架; 振动体，包括从所述框架朝向所述空腔的顶部延伸的多个第一振动梁，连接到所述多个第一振动梁的第一末端之间并延伸到所述停止区域上的冲击梁，以及从所述第二振动梁延伸的第二振动梁 所述冲击梁到达所述多个第一振动梁之间，所述第二振动梁具有第二尖端; 以及设置在所述第二振动梁和所述冲击梁的顶部和底部中的一个上的压电装置，所述压电装置根据所述振动体对所述停止区域的冲击产生电力，并且所述冲击梁和所述第二振动 光束。
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公开(公告)号：US08941231B2
公开(公告)日：2015-01-27
申请号：US13938324
申请日：2013-07-10
发明人： Young Rak Park , Sang Choon Ko , Byoung-Gue Min , Jong-Won Lim , Hokyun Ahn , Sung-Bum Bae , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L23/12 , H01L29/66 , H01L23/522 , H01L23/532 , H01L23/66
CPC分类号： H01L29/66477 , H01L23/5225 , H01L23/5228 , H01L23/5329 , H01L23/66 , H01L2223/6627 , H01L2223/6683 , H01L2924/0002 , H01L2924/00
摘要： Provided are an electronic chip and a method of fabricating the same. The semiconductor chip may include a substrate, an active device integrated on the substrate, a lower interlayered insulating layer covering the resulting structure provided with the active device, a passive device provided on the lower interlayered insulating layer, an upper interlayered insulating layer covering the resulting structure provided with the passive device, and a ground electrode provided on the upper interlayered insulating layer. The upper interlayered insulating layer may be formed of a material, whose dielectric constant may be higher than that of the lower interlayered insulating layer.
摘要翻译： 提供一种电子芯片及其制造方法。 半导体芯片可以包括衬底，集成在衬底上的有源器件，覆盖所提供的有源器件的结构的下层间绝缘层，设置在下层间绝缘层上的无源器件，覆盖所得到的上层间绝缘层 设置有无源器件的结构，以及设置在上层间绝缘层上的接地电极。 上层间绝缘层可以由其介电常数可能高于下层间绝缘层的材料的材料形成。
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公开(公告)号：US09613884B2
公开(公告)日：2017-04-04
申请号：US14872868
申请日：2015-10-01
发明人： Chi Hoon Jun , Jeho Na , Dong Yun Jung , Sang Choon Ko , Eun Soo Nam , Hyung Seok Lee
IPC分类号： H01L23/34 , H01L23/467
CPC分类号： H01L23/467
摘要： Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.
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公开(公告)号：US09293689B2
公开(公告)日：2016-03-22
申请号：US14066085
申请日：2013-10-29
发明人： Chi Hoon Jun , Sang Choon Ko , Jong Tae Moon
IPC分类号： H04R17/00 , H01L41/29 , H01L41/31 , H02N2/18 , H01L41/316 , H01L41/317 , H01L41/318 , H01L41/113
CPC分类号： H01L41/29 , H01L41/1136 , H01L41/31 , H01L41/316 , H01L41/317 , H01L41/318 , H02N2/188 , Y10T29/42
摘要： A piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.
摘要翻译： 一种压电微能量收集器及其制造方法，所述方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。
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公开(公告)号：US08937002B2
公开(公告)日：2015-01-20
申请号：US14230031
申请日：2014-03-31
发明人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
IPC分类号： H01L21/20 , H01L29/66 , H01L21/8252 , H01L27/06 , H01L27/088 , H01L21/02
CPC分类号： H01L29/66446 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L21/8252 , H01L27/0605 , H01L27/0883
摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。
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公开(公告)号：US20140159547A1
公开(公告)日：2014-06-12
申请号：US13864341
申请日：2013-04-17
发明人： Chi Hoon JUN , Sang Choon Ko , Seok-Hwan Moon , Kwang-Seong Choi
IPC分类号： H02N2/18
CPC分类号： H01L41/1136 , H02N2/186
摘要： The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
摘要翻译： 本发明构思公开了一种冲击式压电微型发电机。 冲击型压电微型发电机可以包括具有空腔的基座和与空腔相邻的至少一个止动区域; 固定在基座上的框架; 振动体，包括从所述框架朝向所述空腔的顶部延伸的多个第一振动梁，连接到所述多个第一振动梁的第一末端之间并延伸到所述停止区域上的冲击梁，以及从所述第二振动梁延伸的第二振动梁 所述冲击梁到达所述多个第一振动梁之间，所述第二振动梁具有第二尖端; 以及设置在所述第二振动梁和所述冲击梁的顶部和底部中的一个上的压电装置，所述压电装置根据所述振动体对所述停止区域的冲击产生电力，并且所述冲击梁和所述第二振动 光束。
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