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24 条记录 (耗时 0.025 秒)

    Semiconductor laser device and a method of producing same
    12.
    发明授权
    Semiconductor laser device and a method of producing same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US4849372A

    公开(公告)日：1989-07-18

    申请号：US155982

    申请日：1988-02-16

    申请人： Akira Takemoto

    发明人： Akira Takemoto

    IPC分类号： H01S5/00 ,  H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/2275 ,  Y10S148/095 ,  Y10S438/919

    摘要： A semiconductor laser device of the buried heterostructure type in which leakage current is substantially reduced. A mesa portion carries the active lasing portion of the laser, and current blocking layers are grown at either side of the mesa portion. One of the current blocking layers has its conductivity type inverted to the opposite type to eliminate a current leakage path, thereby to provide a high efficiency low leakage current semiconductor laser. Conductivity inversion is accomplished by adjusting the impurity concentration levels in the layers on either side of the mesa portion, and controllably diffusing impurities from one layer to another until conductivity inversion is accomplished in a thin tip portion of one of the layers.

    摘要翻译： 一种埋入异质结构型的半导体激光器件，其漏电流明显降低。 台面部分承载激光器的有源激光部分，并且电流阻挡层在台面部分的任一侧生长。 电流阻挡层中的一个阻挡层的导电类型反向相反，以消除电流泄漏路径，从而提供高效率的低泄漏电流半导体激光器。 通过调整台面部分两侧的层中的杂质浓度水平，可控制地将杂质从一层扩散到另一层，直至导电反转在其中一层的薄顶端部分完成，从而实现电导率反转。

    DC servomotor position control
    13.
    发明授权
    DC servomotor position control 失效
    直流伺服电机位置控制

    公开(公告)号：US4507594A

    公开(公告)日：1985-03-26

    申请号：US523432

    申请日：1983-08-16

    申请人： Akira Takemoto

    发明人： Akira Takemoto

    IPC分类号： G05D3/12 ,  G05B11/36 ,  G05D3/14 ,  G05B13/00

    CPC分类号： G05D3/1463

    摘要： An apparatus and method for position control by a DC servomotor having improved stiffness. An electric current (i.sub.R) of the servomotor is interpreted anew and defined as follows: ##EQU1## where .theta. is an observed rotation angle of the load (L), .theta..sub.c is a precommanded value, K.sub.F is a feedback coefficient, and K.sub.V is a velocity coefficient. After normalizing the above equation, stiffness (S) can be increased by incorporating a limiter into the control system, thus providing prompt response and smooth covergence of .theta. to .theta..sub.c with a high degree of stiffness maintained at the precommanded angle (.theta..sub.c).

    摘要翻译： 一种具有改善刚度的直流伺服电机进行位置控制的装置和方法。 重新解释伺服电动机的电流（iR），并定义如下：其中θ是负载（L）的观察到的旋转角度，θc是预先指定的值，KF是反馈系数，KV是 速度系数 在归一化上述方程之后，可以通过将限制器并入控制系统来提高刚度（S），从而在以预定角度（θc）保持的高度刚度的情况下，向theta c提供θ的迅速响应和光滑的覆盖。

    Optical integrated circuit device and driving method therefor
    15.
    发明授权
    Optical integrated circuit device and driving method therefor 失效
    光集成电路器件及其驱动方法

    公开(公告)号：US5675602A

    公开(公告)日：1997-10-07

    申请号：US566915

    申请日：1995-12-04

    申请人： Akira Takemoto

    发明人： Akira Takemoto

    IPC分类号： G02B6/122 ,  H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0687 ,  H01S5/10 ,  H01S5/227 ,  H01S5/40 ,  H01S5/50 ,  H01S3/10

    CPC分类号： H01S5/4025 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0687 ,  H01S5/1032 ,  H01S5/2275 ,  H01S5/50 ,  H01S5/5045

    摘要： An optical integrated circuit device includes a compound semiconductor substrate, a semiconductor laser including a compound semiconductor layer, a waveguide of a compound semiconductor layer having the same energy band gap as that of the semiconductor laser, a semiconductor amplifier having the same energy band gap as that of the semiconductor laser, a common electrode disposed on the rear surface of the substrate, a semiconductor laser electrode for current flow between the laser electrode and the common electrode so that the current is injected into the laser, a waveguide electrode for current flow between the waveguide electrode and the common electrode so that the current is injected into the waveguide, and a semiconductor amplifier electrode for current flow between the amplifier electrode and the common electrode so that the current is injected into the amplifier. Therefore, the compound semiconductor layers constituting the semiconductor laser, the waveguide, and the amplifier are grown as a single layer and the optical integrated circuit device is easily fabricated, and an absorption loss in the waveguide is suppressed by applying a voltage across the common electrode and the waveguide electrode to inject current into the waveguide.

    摘要翻译： 光集成电路器件包括化合物半导体衬底，包括化合物半导体层的半导体激光器，具有与半导体激光器相同的能带隙的化合物半导体层的波导，具有与半导体激光器相同的能带隙的半导体放大器 半导体激光器的配置在基板的背面的公共电极，在激光电极和公共电极之间流动的半导体激光电极，使得电流注入到激光器中，用于在 波导电极和公共电极，使得电流注入到波导中，并且用于电流的半导体放大器电极在放大器电极和公共电极之间流动，使得电流被注入到放大器中。 因此，构成半导体激光器，波导和放大器的化合物半导体层生长为单层，并且容易地制造光集成电路器件，并且通过在公共电极上施加电压来抑制波导中的吸收损耗 以及波导电极，以将电流注入到波导中。

    Semiconductor laser device
    16.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5581570A

    公开(公告)日：1996-12-03

    申请号：US408301

    申请日：1995-03-22

    申请人： Yasuaki Yoshida ,  Akira Takemoto

    发明人： Yasuaki Yoshida ,  Akira Takemoto

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/0658 ,  H01S5/2219 ,  H01S5/2231

    摘要： A semiconductor laser device includes semiconductor layers including an active layer and cladding layers sandwiching the active layer and current injecting structure for regulating a region in the active layer into which current is injected. A light confinement coefficient in the current injection region perpendicular to the active layer is smaller than a light confinement coefficient in the same direction of a saturable absorption region. The function of the saturable absorption region is enhanced and pulsation oscillation can be produced at a high power light output.

    摘要翻译： 半导体激光器件包括半导体层，其包括有源层和夹持有源层的覆层以及用于调节注入电流的有源层中的区域的电流注入结构。 垂直于有源层的电流注入区域中的光限制系数小于饱和吸收区域的相同方向上的光限制系数。 可饱和吸收区域的功能得到增强，在高功率光输出时可产生脉动振荡。

    Semiconductor laser
    17.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5345464A

    公开(公告)日：1994-09-06

    申请号：US124018

    申请日：1993-09-21

    申请人： Akira Takemoto

    发明人： Akira Takemoto

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/32 ,  H01S5/2004 ,  H01S5/2275 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/32391

    摘要： A semiconductor laser includes a semiconductor substrate of a first conductivity type; a double heterojunction structure comprising a lower cladding layer of the first conductivity type disposed on the semiconductor substrate and having a first energy band gap, a band gap discontinuity reduction layer of the first conductivity type having a thickness from five to forty nanometers disposed on the lower cladding layer and having a second energy band gap, an undoped active layer disposed on the band gap discontinuity reduction layer and having a third energy band gap smaller than the first energy band gap, the second energy band gap being intermediate the first and third energy band gaps, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the active layer and having a fourth energy band gap larger than the third energy band gap, the double heterojunction structure having a ridge shape; a current confinement structure disposed on opposite sides of the double heterojunction structure for confining current flow to the double heterojunction structure; and first and second electrodes electrically contacting the semiconductor substrate and the upper cladding layer, respectively.

    摘要翻译： 半导体激光器包括第一导电类型的半导体衬底; 一种双异质结结构，包括设置在半导体衬底上并具有第一能带隙的第一导电类型的下包层，第一导电类型的带隙不连续降低层具有设置在下层的五至四十纳米的厚度 包层，具有第二能带隙，未掺杂的有源层设置在所述带隙不连续层上，并且具有小于所述第一能带隙的第三能带隙，所述第二能带隙位于所述第一和第三能带之间 间隙和与第一导电类型相反的第二导电类型的上包层设置在有源层上并具有大于第三能带隙的第四能带隙，该双异质结结构具有脊形; 设置在双异质结结构的相对侧上的电流限制结构，用于限制电流流向双异质结结构; 以及分别与半导体衬底和上覆层电接触的第一和第二电极。

    Light interactive heterojunction semiconductor device
    18.
    发明授权
    Light interactive heterojunction semiconductor device 失效
    光交互式异质半导体器件

    公开(公告)号：US5126804A

    公开(公告)日：1992-06-30

    申请号：US710366

    申请日：1991-06-03

    申请人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

    发明人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

    IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/341

    摘要： A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.

    METHOD FOR GENERATING VIDEO DATA FOR TRICK PLAY
    19.
    发明申请
    METHOD FOR GENERATING VIDEO DATA FOR TRICK PLAY 审中-公开
    用于生成视频数据进行TRICK PLAY的方法

    公开(公告)号：US20100246670A1

    公开(公告)日：2010-09-30

    申请号：US12733346

    申请日：2007-08-29

    申请人： Akira Takemoto ,  Hiroyasu Kinoue ,  Yutaka Isaji

    发明人： Akira Takemoto ,  Hiroyasu Kinoue ,  Yutaka Isaji

    IPC分类号： H04N7/26

    CPC分类号： H04N5/783 ,  G11B27/005 ,  H04N7/17309 ,  H04N9/8042 ,  H04N21/2343 ,  H04N21/2387 ,  H04N21/4325 ,  H04N21/6587 ,  H04N21/8455

    摘要： A transmission server reads out encoded data files from storage medium such as memory in itself and removable medium, and transmits the read-out file to the reproduction apparatus upon the request from the reproduction apparatus. A plurality of encoded video files is corresponding to an AV content. These encoded data files correspond to different reproduction modes respectively. The transmission server transmits an encoded file to the reproduction apparatus which corresponds to the requested AV content and the requested reproduction mode. The amount of the fast-forward data is reduced than that of the original data, since the fast-forward data is a part of the original data.

    摘要翻译： 传输服务器从诸如存储器本身和可移除介质的存储介质中读出编码数据文件，并且根据来自再现设备的请求将读出的文件发送到再现设备。 多个编码视频文件对应于AV内容。 这些编码数据文件分别对应于不同的再现模式。 发送服务器将编码的文件发送到对应于所请求的AV内容和所请求的再现模式的再现设备。 由于快进数据是原始数据的一部分，所以快进数据量比原始数据的数量少。