Abstract:
A laser processing system includes a wavelength tunable laser apparatus capable of changing the wavelength of pulsed laser light to be outputted, an optical system irradiating a workpiece with the pulsed laser light, a reference wavelength acquisition section acquiring a reference wavelength corresponding to photon absorption according to the material of the workpiece, a laser processing controller controlling the wavelength tunable laser apparatus to perform preprocessing before final processing performed on the workpiece, changes the wavelength of the pulsed laser light over a predetermined range containing the reference wavelength, and performs wavelength search preprocessing at a plurality of wavelengths, a processed state measurer measuring a processed state on a wavelength basis achieved by the wavelength search preprocessing performed at the plurality of wavelengths, and an optimum wavelength determination section assessing the processed state on a wavelength basis to determine an optimum wavelength used in the final processing.
Abstract:
A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.
Abstract:
An extreme ultraviolet light generation system used with a laser apparatus may be provided, and the extreme ultraviolet light generation system may include: a chamber including at least one window for at least one laser beam and a target supply unit for supplying a target material into the chamber; and at least one polarization control unit, provided on a laser beam path, for controlling a polarization state of the at least one laser beam.
Abstract:
An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm2 and equal to or lower than a fluence of the main pulse laser beam.
Abstract:
An extreme ultraviolet light generation apparatus may include: a chamber including a plasma generation region to which a target is supplied, the target being turned into plasma so that extreme ultraviolet light is generated in the chamber; a target supply part configured to supply the target to the plasma generation region by outputting the target as a droplet into the chamber; a droplet detector configured to detect the droplet traveling from the target supply part to the plasma generation region; an imaging part configured to capture an image of an imaging region containing the plasma generation region in the chamber; and a controller configured to control an imaging timing at which the imaging part captures the image of the imaging region, based on a detection timing at which the droplet detector detects the droplet.
Abstract:
A light beam measurement device includes: a polarization measurement unit including a first measurement beam splitter provided on an optical path of a laser beam and configured to measure a polarization state of the laser beam having been partially reflected by the first measurement beam splitter; a beam profile measurement unit including a second measurement beam splitter provided on the optical path of the laser beam and configured to measure a beam profile of the laser beam having been partially reflected by the second measurement beam splitter; and a laser beam-directional stability measurement unit configured to measure a stability in a traveling direction of the laser beam, while the first measurement beam splitter and the second measurement beam splitter are made of a material containing CaF2.
Abstract:
The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.
Abstract:
An extreme ultraviolet light generation system used with a laser apparatus may be provided, and the extreme ultraviolet light generation system may include: a chamber including at least one window for at least one laser beam and a target supply unit for supplying a target material into the chamber; and at least one polarization control unit, provided on a laser beam path, for controlling a polarization state of the at least one laser beam.
Abstract:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction, unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
Abstract:
An aspect of the present disclosure may include a gas lock cover secured to a nozzle holder and provided downstream of a nozzle. The gas lock cover may cover a periphery of an exit of the nozzle and be structured to guide gas supplied from a gas supply unit. The gas lock cover may include a hollow cylindrical part provided downstream of the nozzle and having an exit opening for outputting droplets that are outputted from the nozzle and pass through an internal cavity of the cylindrical part. The gas lock cover may include a channel for transmitting the gas supplied from the gas supply unit, the channel being structured to orient a flow of the transmitted gas so as to flow to the exit opening of the cylindrical part through the internal cavity of the cylindrical part.