Image display device and method capable of adjusting brightness
    11.
    发明申请
    Image display device and method capable of adjusting brightness 有权
    能够调整亮度的图像显示装置和方法

    公开(公告)号:US20090128583A1

    公开(公告)日:2009-05-21

    申请号:US12232351

    申请日:2008-09-16

    申请人: Yong Seok Choi

    发明人: Yong Seok Choi

    IPC分类号: G09G5/10

    摘要: Provided is an image display device capable of adjusting brightness. The image display device includes a brightness determining unit that determines the brightness of image data, applied from outside, so as to output a backlight selection signal and a contrast selection signal; a backlight control unit that is connected to the brightness determining unit and outputs a backlight driving voltage for supplying backlight with brightness corresponding to the backlight selection signal; a contrast control unit that is connected to the brightness determining unit and outputs an image output signal for outputting an image of which the contrast is adjusted to correspond to the contrast selection signal; and an image display unit that is connected to the backlight control unit and the contrast control unit and receives the backlight driving voltage and the image output signal so as to display an image in which the brightness of the backlight and the contrast of the image data are respectively adjusted.

    摘要翻译: 提供能够调节亮度的图像显示装置。 图像显示装置包括亮度确定单元,其确定从外部施加的图像数据的亮度,以便输出背光选择信号和对比度选择信号; 背光源控制单元,其连接到所述亮度确定单元,并且输出用于向所述背光源提供对应于所述背光选择信号的亮度的背光驱动电压; 对比度控制单元,其连接到亮度确定单元,并输出用于输出对比度被调整为与对比度选择信号对应的图像的图像输出信号; 以及图像显示单元,其连接到背光控制单元和对比度控制单元,并且接收背光驱动电压和图像输出信号,以便显示背光的亮度和图像数据的对比度为 分别调整。

    METHOD OF MONITORING FOCUS IN LITHOGRAPHIC PROCESSES
    12.
    发明申请
    METHOD OF MONITORING FOCUS IN LITHOGRAPHIC PROCESSES 有权
    在地理过程中监测焦点的方法

    公开(公告)号:US20090004572A1

    公开(公告)日:2009-01-01

    申请号:US11769436

    申请日:2007-06-27

    申请人: Yong Seok Choi

    发明人: Yong Seok Choi

    IPC分类号: G03C5/00 G03F1/00

    摘要: The present disclosure is directed to a method for monitoring focus of a photolithography system. The method comprises providing a substrate and depositing a photoresist layer on the substrate. At least one photomask is provided comprising one or more forbidden pitch photomask patterns formed thereon. The forbidden pitch patterns are imaged in the photoresist layer by exposing the photoresist layer to radiation through the at least one photomask. The imaged forbidden pitch patterns are developed in the photoresist. Focus error information regarding the imaging process can be determined using the developed forbidden pitch patterns.

    摘要翻译: 本公开涉及一种用于监测光刻系统的焦点的方法。 该方法包括提供衬底并在衬底上沉积光致抗蚀剂层。 提供至少一个光掩模,其包括形成在其上的一个或多个禁止间距光掩模图案。 通过将光致抗蚀剂层暴露于通过至少一个光掩模的辐射,将禁止的间距图案成像在光致抗蚀剂层中。 成像的禁止间距图案在光致抗蚀剂中显影。 可以使用开发的禁止俯仰图案来确定关于成像过程的聚焦误差信息。

    Method of manufacturing capacitor-embedded low temperature co-fired ceramic substrate
    13.
    发明申请
    Method of manufacturing capacitor-embedded low temperature co-fired ceramic substrate 失效
    制造电容器嵌入式低温共烧陶瓷基板的方法

    公开(公告)号:US20080000061A1

    公开(公告)日:2008-01-03

    申请号:US11819897

    申请日:2007-06-29

    IPC分类号: H01G9/00

    摘要: A method of manufacturing a capacitor-embedded low temperature co-fired ceramic substrate, the method including: manufacturing a capacitor part by firing a deposition including at least one high dielectric ceramic sheet to form a capacitor part; providing a plurality of low temperature co-fired green sheets each having at least one of a conductive pattern and a conductive via hole thereon; forming a low temperature co-fired ceramic deposition by depositing the low temperature co-fired green sheets to embed the capacitor part in the low temperature co-fired ceramic deposition, the embedded capacitor part connected to the one of conductive pattern and conductive via hole of an adjacent one of the green sheets; and firing the low temperature co-fired ceramic deposition having the capacitor part embedded therein. The capacitor-embedded low temperature co-fired ceramic substrate may be beneficially employed in various types of capacitor part such as a deposited chip capacitor and a capacitor layer structure.

    摘要翻译: 一种制造电容器嵌入式低温共烧陶瓷基板的方法,所述方法包括:通过烧结包括至少一个高介电陶瓷片的沉积物来形成电容器部分,以形成电容器部分; 提供多个低温共烧生坯片,每个低温共烧生坯在其上具有导电图案和导电通孔中的至少一个; 通过沉积低温共烧生片将电容器部分嵌入低温共烧陶瓷沉积中形成低温共烧陶瓷沉积,将嵌入式电容器部分连接到导电图案和导电通孔中的一个 相邻的一个生片; 并烧制具有嵌入其中的电容器部分的低温共烧陶瓷沉积。 电容器嵌入式低温共烧陶瓷基板可以有利地用于各种类型的电容器部分,例如沉积的芯片电容器和电容器层结构。

    Gate CD control using local design on both sides of neighboring dummy gate level features
    15.
    发明授权
    Gate CD control using local design on both sides of neighboring dummy gate level features 有权
    Gate CD控制采用局部设计,在相邻虚拟门级功能的两侧

    公开(公告)号:US08455180B2

    公开(公告)日:2013-06-04

    申请号:US12915974

    申请日:2010-10-29

    IPC分类号: G03F7/20

    摘要: A method of forming an IC including MOS transistors includes using a gate mask to form a first active gate feature having a line width W1 over an active area and a neighboring dummy feature having a line width 0.8W1 to 1.3W1. The neighboring dummy feature has a first side adjacent to the first active gate feature, and a nearest gate level feature on a second side opposite the first side. The neighboring dummy feature defines a gate pitch based on a distance to the first active gate feature or the neighboring dummy feature maintains a gate pitch in a gate array including the first active gate feature. The spacing between the neighboring dummy feature and the nearest gate level feature (i) maintains the gate pitch or (ii) provides a SRAF enabling distance that is ≧2 times the gate pitch and the gate mask includes a SRAF over the SRAF distance.

    摘要翻译: 形成包括MOS晶体管的IC的方法包括使用栅极掩模形成在有源区上具有线宽度W1的第一有源栅极特征和具有线宽0.8W1至1.3W1的相邻虚拟特征。 相邻的虚拟特征具有与第一有效栅极特征相邻的第一侧和与第一侧相对的第二侧上的最近的栅极级特征。 相邻的虚拟特征基于到第一有源栅极特征的距离来限定栅极间距,或者相邻的虚设特征维持包括第一有源栅极特征的栅极阵列中的栅极间距。 相邻虚拟特征和最近的门级特征之间的间隔(i)维持栅极间距,或(ii)提供> = 2倍栅极间距的SRAF使能距离,并且栅极掩模包括在SRAF距离上的SRAF。

    Image display device and method capable of adjusting brightness
    17.
    发明授权
    Image display device and method capable of adjusting brightness 有权
    能够调整亮度的图像显示装置和方法

    公开(公告)号:US08188966B2

    公开(公告)日:2012-05-29

    申请号:US12232351

    申请日:2008-09-16

    申请人: Yong Seok Choi

    发明人: Yong Seok Choi

    IPC分类号: G09G5/10

    摘要: Provided is an image display device capable of adjusting brightness. The image display device includes a brightness determining unit that determines the brightness of image data, applied from outside, so as to output a backlight selection signal and a contrast selection signal; a backlight control unit that is connected to the brightness determining unit and outputs a backlight driving voltage for supplying backlight with brightness corresponding to the backlight selection signal; a contrast control unit that is connected to the brightness determining unit and outputs an image output signal for outputting an image of which the contrast is adjusted to correspond to the contrast selection signal; and an image display unit that is connected to the backlight control unit and the contrast control unit and receives the backlight driving voltage and the image output signal so as to display an image in which the brightness of the backlight and the contrast of the image data are respectively adjusted.

    摘要翻译: 提供能够调节亮度的图像显示装置。 图像显示装置包括亮度确定单元,其确定从外部施加的图像数据的亮度,以便输出背光选择信号和对比度选择信号; 背光源控制单元,其连接到所述亮度确定单元,并且输出用于向所述背光源提供对应于所述背光选择信号的亮度的背光驱动电压; 对比度控制单元,其连接到亮度确定单元,并输出用于输出对比度被调整为与对比度选择信号对应的图像的图像输出信号; 以及图像显示单元,其连接到背光控制单元和对比度控制单元,并且接收背光驱动电压和图像输出信号,以便显示背光的亮度和图像数据的对比度为 分别调整。

    GATE CD CONTROL USING LOCAL DESIGN ON BOTH SIDES OF NEIGHBORING DUMMY GATE LEVEL FEATURES
    18.
    发明申请
    GATE CD CONTROL USING LOCAL DESIGN ON BOTH SIDES OF NEIGHBORING DUMMY GATE LEVEL FEATURES 有权
    使用本地设计的GATE CD控制在相邻的两个门的水平特征

    公开(公告)号:US20120107729A1

    公开(公告)日:2012-05-03

    申请号:US12915974

    申请日:2010-10-29

    IPC分类号: G03F1/00 H01L21/336 G06F17/50

    摘要: A method of forming an IC including MOS transistors includes using a gate mask to form a first active gate feature having a line width W1 over an active area and a neighboring dummy feature having a line width 0.8W1 to 1.3W1. The neighboring dummy feature has a first side adjacent to the first active gate feature, and a nearest gate level feature on a second side opposite the first side. The neighboring dummy feature defines a gate pitch based on a distance to the first active gate feature or the neighboring dummy feature maintains a gate pitch in a gate array including the first active gate feature. The spacing between the neighboring dummy feature and the nearest gate level feature (i) maintains the gate pitch or (ii) provides a SRAF enabling distance that is ≧2 times the gate pitch and the gate mask includes a SRAF over the SRAF distance.

    摘要翻译: 形成包括MOS晶体管的IC的方法包括使用栅极掩模形成在有源区上具有线宽度W1的第一有源栅极特征和具有线宽0.8W1至1.3W1的相邻虚拟特征。 相邻的虚拟特征具有与第一有效栅极特征相邻的第一侧和与第一侧相对的第二侧上的最近的栅极级特征。 相邻的虚拟特征基于到第一有源栅极特征的距离来限定栅极间距,或者相邻的虚设特征维持包括第一有源栅极特征的栅极阵列中的栅极间距。 相邻的虚拟特征与最近的栅极电平特征(i)之间的间隔保持栅极间距,或(ii)提供比栅极间距大2倍的SRAF使能距离,并且栅极掩模包括在SRAF距离上的SRAF。

    Light emitting device package
    19.
    发明授权
    Light emitting device package 有权
    发光装置封装

    公开(公告)号:US08044423B2

    公开(公告)日:2011-10-25

    申请号:US12792589

    申请日:2010-06-02

    申请人: Yong Seok Choi

    发明人: Yong Seok Choi

    IPC分类号: H01L33/00

    摘要: Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.

    摘要翻译: 提供了一种发光器件封装。 发光器件封装包括基底,框架和发光器件。 基底包括多个电极垫。 框架由硅形成,附着在基底基板上,并具有开口。 发光器件电连接到开口中的电极焊盘。

    Member for adjusting horizontality, and probe card with the same
    20.
    发明申请
    Member for adjusting horizontality, and probe card with the same 审中-公开
    会员调整水平度,探针卡相同

    公开(公告)号:US20110181314A1

    公开(公告)日:2011-07-28

    申请号:US12805804

    申请日:2010-08-19

    IPC分类号: G01R31/00

    CPC分类号: G01R31/2891

    摘要: Disclosed herein are a member for adjusting horizontality and a probe card with the same. The member for adjusting horizontality according to the present invention horizontally couples a micro probe head to a probe substrate with an adhesive layer therebetween, and the member for adjusting horizontality which is coupled to the micro probe head does not have an edge of the coupling portion and an edge of the adhesive layer. Therefore, according to the member for adjusting horizontality and the probe card with the same of the present invention, it is possible to prevent the coupling portions of the micro probe head from being broken, by reducing stress applied to the micro probe head during the process of horizontally coupling the micro probe head to the probe substrate.

    摘要翻译: 这里公开了用于调节水平度的构件和具有该水平度的探针卡。 根据本发明的用于调节水平度的构件将微型探针头水平地耦合到探针基底上,其间具有粘合剂层,并且用于调节与微型探针头连接的水平度的构件不具有联接部分的边缘, 粘合剂层的边缘。 因此,根据本发明的水平调整用构件和探针卡,通过减少在该过程中施加于微型探头的应力,可以防止微型探头的联结部分破裂 将微探头水平地耦合到探针基板。