公开(公告)号：US20190019914A1

公开(公告)日：2019-01-17

申请号：US16136488

申请日：2018-09-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01P1/17 ,  H01P3/16 ,  H01L31/02

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20180254761A1

公开(公告)日：2018-09-06

申请号：US15971257

申请日：2018-05-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H3/007 ,  H03H9/54 ,  H03H9/56 ,  G06F17/50 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/24 ,  H03H9/10 ,  H03H9/64 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US20170366153A1

公开(公告)日：2017-12-21

申请号：US15691249

申请日：2017-08-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H3/007 ,  H03H9/56 ,  G06F17/50 ,  H03H3/02 ,  H03H9/02 ,  H03H9/24 ,  H03H9/10 ,  H03H9/64 ,  H03H9/54 ,  H03H3/08 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US20170170056A1

公开(公告)日：2017-06-15

申请号：US15437736

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/306

CPC classification number: H01L21/76289 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66772 ,  H01L29/78

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

公开(公告)号：US20180254374A1

公开(公告)日：2018-09-06

申请号：US15971240

申请日：2018-05-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/103

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20180076351A1

公开(公告)日：2018-03-15

申请号：US15807054

申请日：2017-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/103

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20170125626A1

公开(公告)日：2017-05-04

申请号：US15408004

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232 ,  H01L31/028

CPC classification number: H01L31/1808 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1864 ,  H01L31/1872 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  H05K999/99 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20160079451A1

公开(公告)日：2016-03-17

申请号：US14483584

申请日：2014-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/02 ,  H01L31/028

CPC classification number: H01L31/1872 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Abstract translation: 公开了光电二极管结构和制造方法。 该方法包括在电介质层中形成波导结构。 该方法还包括在线（BEOL）金属层的后端中形成靠近波导结构的Ge材料。 该方法还包括通过与Ge材料接触的金属层的低温退火工艺将Ge材料结晶成晶体Ge结构。

公开(公告)号：US20160072469A1

公开(公告)日：2016-03-10

申请号：US14940815

申请日：2015-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H3/04

CPC classification number: H03H3/04 ,  B81B7/008 ,  B81B7/02 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/0973 ,  H03H3/08 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/48 ,  H03H9/542 ,  H03H9/6403 ,  H03H9/6423 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

公开(公告)号：US20160071925A1

公开(公告)日：2016-03-10

申请号：US14480215

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762 ,  H01L21/306 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L21/76289 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66772 ,  H01L29/78

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.