公开(公告)号：US20050139882A1

公开(公告)日：2005-06-30

申请号：US11024469

申请日：2004-12-30

Applicant: Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

Inventor： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

IPC: H01L21/3205 ,  G11C11/22 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L31/119

CPC classification number: H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

Abstract: In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

Abstract translation: 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

公开(公告)号：US06870173B2

公开(公告)日：2005-03-22

申请号：US10792849

申请日：2004-03-05

Applicant: Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

Inventor： Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

IPC: G21K1/093 ,  G03F7/20 ,  G03F7/207 ,  G21K5/04 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0216 ,  H01J2237/15

Abstract: An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.

Abstract translation: 用于控制电子束投影光刻（EPL）系统中从电子束发射器发射的电子束的路径的电子束聚焦装置包括用于在真空室内产生磁场的顶部和底部磁体，顶部和底部 分别设置在其上装载有晶片的真空室的上方和下方的磁体; 分别与顶部和底部磁体磁接触的上部和下部磁极件，上部和下部磁极片分别穿透真空室的顶壁和底壁; 以及分别具有圆形形状的上下突起，从上下极片的相对表面向外延伸。

公开(公告)号：US20150028278A1

公开(公告)日：2015-01-29

申请号：US14444083

申请日：2014-07-28

Applicant: Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

Inventor： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

IPC: H01L45/00

CPC classification number: H01L29/788 ,  G06N3/049 ,  G06N3/063 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C14/0063 ,  G11C16/0433 ,  G11C2213/15 ,  G11C2213/53 ,  H01L27/11521 ,  H01L28/00 ,  H01L29/408 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/512 ,  H01L29/517 ,  H01L29/685 ,  H01L29/78 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/147

Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Abstract translation: 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。

公开(公告)号：US08456889B2

公开(公告)日：2013-06-04

申请号：US12929519

申请日：2011-01-31

Applicant: Young-bae Kim ,  In-kyeong Yoo ,  Chang-jung Kim

Inventor： Young-bae Kim ,  In-kyeong Yoo ,  Chang-jung Kim

IPC: G11C11/00

CPC classification number: H01L29/685 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/53

Abstract: Semiconductor devices including variable resistance materials and methods of operating the semiconductor devices. The semiconductor devices use variable resistance materials with resistances that vary according to applied voltages as channel layers.

Abstract translation: 包括可变电阻材料的半导体器件和操作半导体器件的方法。 半导体器件使用具有根据施加的电压而变化的电阻的可变电阻材料作为沟道层。

公开(公告)号：US20120249718A1

公开(公告)日：2012-10-04

申请号：US13439147

申请日：2012-04-04

Applicant: Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

Inventor： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

IPC: B41J2/435 ,  B05D5/06 ,  G02B1/10 ,  G02B5/09 ,  G02B27/14

CPC classification number: G02B1/005 ,  G02B5/1809 ,  G02B5/1861 ,  G02B27/102 ,  G02B27/1086

Abstract: A color printing paper includes a substrate having a printing region and a plurality of photonic crystal patterns formed on the printing region. The plurality of photonic crystal layer patterns have different respective optical reflection characteristics. The printing method includes selecting pixels including a plurality of photonic crystal layer patterns that express at least one of a red color, a green color, and a blue color, and changing optical reflection characteristics of at least a portion of the plurality of photonic crystal layer patterns of the selected pixels.

Abstract translation: 彩色打印纸包括具有打印区域和形成在打印区域上的多个光子晶体图案的基板。 多个光子晶体层图案具有不同的相应的光学反射特性。 打印方法包括选择包括表示红色，绿色和蓝色中的至少一种的多个光子晶体层图案的像素，以及改变多个光子晶体层的至少一部分的光学反射特性 所选像素的图案。

公开(公告)号：US20110222685A1

公开(公告)日：2011-09-15

申请号：US12923375

申请日：2010-09-17

Applicant: Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

Inventor： Ho-jung Kim ,  In-kyeong Yoo ,  Jai-kwang Shin

IPC: H04L9/38 ,  H04L9/06

CPC classification number: G06F21/85 ,  G06F21/78 ,  G11C7/24 ,  G11C11/005 ,  G11C13/0002 ,  G11C13/0059 ,  G11C14/009

Abstract: A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.

Abstract translation: 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。

公开(公告)号：US07835167B2

公开(公告)日：2010-11-16

申请号：US11980418

申请日：2007-10-31

Applicant: Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

Inventor： Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

IPC: G11C19/00 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  G11C21/00 ,  Y10T428/11

Abstract: Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

Abstract translation: 示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。 数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和 第二磁性层和被配置为读取第二磁性层的多个读取头。 数据存储设备可以存储更大量的数据，而不需要移动机械系统。

公开(公告)号：US20080257861A1

公开(公告)日：2008-10-23

申请号：US11882112

申请日：2007-07-30

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC: B44C1/22

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

Abstract translation: 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US20070120580A1

公开(公告)日：2007-05-31

申请号：US11403902

申请日：2006-04-14

Applicant: Dong Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

Inventor： Dong Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

IPC: H03K19/00

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

Abstract translation: 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

公开(公告)号：US20070052001A1

公开(公告)日：2007-03-08

申请号：US11502426

申请日：2006-08-11

Applicant: Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

Inventor： Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

IPC: H01L29/76

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.

Abstract translation: 提供一种非易失性半导体存储器件及其制造方法。 非易失性存储器件可以包括连接到开关器件的开关器件和存储节点。 存储节点可以包括下电极，数据存储层和上电极。 数据存储层可以包括在第一电压处形成电流路径的第一区域和围绕第一区域的第二区域，其中电流路径形成在大于第一电压的第二电压处。 第一区域可以被定位成接触上电极和下电极。