公开(公告)号：US20060181220A1

公开(公告)日：2006-08-17

申请号：US11254793

申请日：2005-10-21

申请人： Chang-wook Moon ,  In-kyeong Yoo

发明人： Chang-wook Moon ,  In-kyeong Yoo

IPC分类号： H01L21/00 ,  H01J7/24

CPC分类号： H01J9/025

摘要： A method and apparatus for fabricating an emitter by colliding an arc with the surface of a wafer inside a vacuum chamber are provided. The apparatus includes: a vacuum chamber in which a wafer is inserted; a magnetic field generating unit for generating a uniform magnetic field inside the vacuum chamber; an electric field generating unit for forming an electric field parallel to the magnetic field inside the vacuum chamber; and a master emitter for emitting electrons towards the wafer. The electrons emitted from the master emitter move along the magnetic field and the electric field. The arc is generated when the electric field or the driving voltage surpasses a threshold by controlling the strength of the electric field and the driving voltage of the master emitter. Thus, the surface of the wafer is instantaneously melted and solidified by the arc, thereby forming the emitter with a sharp tip on the surface of the wafer.

摘要翻译： 提供了一种用于通过使电弧与真空室内的晶片的表面碰撞来制造发射器的方法和装置。 该装置包括：其中插入有晶片的真空室; 磁场产生单元，用于在真空室内产生均匀的磁场; 电场产生单元，用于形成与真空室内的磁场平行的电场; 以及用于向晶片发射电子的主发射器。 从主发射器发射的电子沿着磁场和电场移动。 当电场或驱动电压通过控制电场的强度和主发射极的驱动电压而超过阈值时，产生电弧。 因此，晶片的表面被电弧瞬间熔化和凝固，从而在晶片的表面上形成具有尖锐尖端的发射极。

公开(公告)号：US20060086966A1

公开(公告)日：2006-04-27

申请号：US11296510

申请日：2005-12-08

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： H01L29/76

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US06992923B2

公开(公告)日：2006-01-31

申请号：US11097157

申请日：2005-04-04

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US06953946B2

公开(公告)日：2005-10-11

申请号：US10674459

申请日：2003-10-01

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC分类号： G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L43/00

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

摘要翻译： 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US06913984B2

公开(公告)日：2005-07-05

申请号：US10743377

申请日：2003-12-23

申请人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

发明人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

IPC分类号： B82B1/00 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/76

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792 ,  Y10S977/723 ,  Y10S977/774

摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

摘要翻译： 利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔 通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层 作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以 用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。

公开(公告)号：US20050139882A1

公开(公告)日：2005-06-30

申请号：US11024469

申请日：2004-12-30

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

IPC分类号： H01L21/3205 ,  G11C11/22 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L31/119

CPC分类号： H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

摘要翻译： 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

公开(公告)号：US06870173B2

公开(公告)日：2005-03-22

申请号：US10792849

申请日：2004-03-05

申请人： Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

发明人： Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

IPC分类号： G21K1/093 ,  G03F7/20 ,  G03F7/207 ,  G21K5/04 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0216 ,  H01J2237/15

摘要： An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.

摘要翻译： 用于控制电子束投影光刻（EPL）系统中从电子束发射器发射的电子束的路径的电子束聚焦装置包括用于在真空室内产生磁场的顶部和底部磁体，顶部和底部 分别设置在其上装载有晶片的真空室的上方和下方的磁体; 分别与顶部和底部磁体磁接触的上部和下部磁极件，上部和下部磁极片分别穿透真空室的顶壁和底壁; 以及分别具有圆形形状的上下突起，从上下极片的相对表面向外延伸。

公开(公告)号：US20150028278A1

公开(公告)日：2015-01-29

申请号：US14444083

申请日：2014-07-28

申请人： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

发明人： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

IPC分类号： H01L45/00

CPC分类号： H01L29/788 ,  G06N3/049 ,  G06N3/063 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C14/0063 ,  G11C16/0433 ,  G11C2213/15 ,  G11C2213/53 ,  H01L27/11521 ,  H01L28/00 ,  H01L29/408 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/512 ,  H01L29/517 ,  H01L29/685 ,  H01L29/78 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/147

摘要： Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

摘要翻译： 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。

公开(公告)号：US08456889B2

公开(公告)日：2013-06-04

申请号：US12929519

申请日：2011-01-31

申请人： Young-bae Kim ,  In-kyeong Yoo ,  Chang-jung Kim

发明人： Young-bae Kim ,  In-kyeong Yoo ,  Chang-jung Kim

IPC分类号： G11C11/00

CPC分类号： H01L29/685 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/53

摘要： Semiconductor devices including variable resistance materials and methods of operating the semiconductor devices. The semiconductor devices use variable resistance materials with resistances that vary according to applied voltages as channel layers.

摘要翻译： 包括可变电阻材料的半导体器件和操作半导体器件的方法。 半导体器件使用具有根据施加的电压而变化的电阻的可变电阻材料作为沟道层。

公开(公告)号：US20120249718A1

公开(公告)日：2012-10-04

申请号：US13439147

申请日：2012-04-04

申请人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

发明人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

IPC分类号： B41J2/435 ,  B05D5/06 ,  G02B1/10 ,  G02B5/09 ,  G02B27/14

CPC分类号： G02B1/005 ,  G02B5/1809 ,  G02B5/1861 ,  G02B27/102 ,  G02B27/1086

摘要： A color printing paper includes a substrate having a printing region and a plurality of photonic crystal patterns formed on the printing region. The plurality of photonic crystal layer patterns have different respective optical reflection characteristics. The printing method includes selecting pixels including a plurality of photonic crystal layer patterns that express at least one of a red color, a green color, and a blue color, and changing optical reflection characteristics of at least a portion of the plurality of photonic crystal layer patterns of the selected pixels.

摘要翻译： 彩色打印纸包括具有打印区域和形成在打印区域上的多个光子晶体图案的基板。 多个光子晶体层图案具有不同的相应的光学反射特性。 打印方法包括选择包括表示红色，绿色和蓝色中的至少一种的多个光子晶体层图案的像素，以及改变多个光子晶体层的至少一部分的光学反射特性 所选像素的图案。