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11.发明申请公开(公告)号：US20180240967A1
公开(公告)日：2018-08-23
申请号：US15956376
申请日：2018-04-18
CPC分类号： H01L43/08 , B81C2201/0132 , B81C2201/0142 , B81C2201/0143 , G11C11/161 , G11C2211/5615 , H01L21/31105 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.
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公开(公告)号：US20180076275A1
公开(公告)日：2018-03-15
申请号：US15817858
申请日：2017-11-20
发明人： Hariklia Deligianni , William J. Gallagher , Andrew J. Kellock , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang
IPC分类号： H01L49/02 , H01F27/28 , H01F27/24 , H01F41/26 , H01L23/522 , C23C18/16 , H01F5/00 , H01L21/288 , H01F1/04 , H01F27/00 , H01F41/04
CPC分类号： H01L28/10 , C23C18/16 , C23C18/1605 , C23C18/165 , C23C18/1651 , C23C18/1673 , C23C18/168 , C23C18/1694 , C23C18/1696 , C23C18/1831 , C23C18/50 , H01F1/04 , H01F5/00 , H01F27/00 , H01F27/24 , H01F27/28 , H01F41/046 , H01F41/26 , H01L21/288 , H01L21/2885 , H01L23/5227
摘要： An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
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公开(公告)号：US09859357B1
公开(公告)日：2018-01-02
申请号：US15209803
申请日：2016-07-14
IPC分类号： H01L49/02 , H01L23/522
CPC分类号： H01L28/10 , H01L23/5227 , H01L28/26 , H01L28/40
摘要： A magnetic laminating structure and process includes alternating layers of a magnetic material and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer abutting at least one additional insulating layer, wherein the first insulating layer and the at least one additional insulating layer comprise different dielectric materials and/or are formed by a different deposition process, and wherein the layers of the magnetic material have a cumulative thickness greater than 1 micron.
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14.发明申请公开(公告)号：US20170229533A1
公开(公告)日：2017-08-10
申请号：US15410987
申请日：2017-01-20
发明人： Hariklia Deligianni , William J. Gallagher , Maurice Mason , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang
IPC分类号： H01L49/02 , H01F41/02 , H01L23/532 , H01F1/047 , H01L21/288 , H01L23/522
CPC分类号： H01L28/10 , H01F1/04 , H01F1/047 , H01F41/02 , H01F41/04 , H01F41/046 , H01F41/26 , H01L21/288 , H01L23/5227 , H01L23/53209 , H01L23/53242
摘要： An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
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公开(公告)号：US20170200766A1
公开(公告)日：2017-07-13
申请号：US15414997
申请日：2017-01-25
IPC分类号： H01L27/22 , H01F27/24 , H01F1/147 , H01L43/10 , H01L49/02 , H01L43/12 , H01L43/02 , H01F27/28 , H01F10/14
CPC分类号： H01L27/22 , G11B5/3163 , H01F1/14708 , H01F7/021 , H01F10/14 , H01F27/24 , H01F27/2804 , H01F2027/2809 , H01L27/0641 , H01L27/224 , H01L28/10 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
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公开(公告)号：US20170062111A1
公开(公告)日：2017-03-02
申请号：US15348015
申请日：2016-11-10
发明人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
CPC分类号： H01F10/3231 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D7/001 , C25D7/123 , C25D9/08 , C25D9/10 , C25D17/001 , G11B5/66 , H01F3/02 , H01F10/3236 , H01F10/324 , H01F10/325 , H01F10/3254 , H01F41/02
摘要： A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
摘要翻译： 层叠结构包括第一磁性层，第二磁性层，设置在第一和第二磁性层之间的第一间隔件和设置在第二磁性层上的第二间隔件。
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17.发明授权Low degradation MRAM encapsulation process using silicon-rich silicon nitride film 有权使用富硅氮化硅薄膜的低降解MRAM封装工艺公开(公告)号：US09515252B1
公开(公告)日：2016-12-06
申请号：US14983015
申请日：2015-12-29
发明人： Anthony J. Annunziata , Chandrasekaran Kothandaraman , Gen P. Lauer , JungHyuk Lee , Nathan P. Marchack , Deborah A. Neumayer , Eugene J. O'Sullivan , Jeong-Heon Park
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1677 , H01L27/22 , H01L27/222 , H01L43/02 , H01L43/12
摘要： A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.
摘要翻译： 一种制造磁性随机存取存储器（MRAM）装置的方法，包括在电极上形成磁性隧道结，所述磁性隧道结包括第一参考层，自由层和第一隧道势垒层; 以及在所述磁性隧道结的侧壁上并沿着所述磁性隧道结的侧壁沉积封装的氮化硅膜; 其中氮化硅膜具有0.1:1的N:Si比率。还公开了通过上述方法制造的MRAM器件。
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公开(公告)号：US20160260451A1
公开(公告)日：2016-09-08
申请号：US15149727
申请日：2016-05-09
发明人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： G11B5/66
CPC分类号： H01F10/3231 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D7/001 , C25D7/123 , C25D9/08 , C25D9/10 , C25D17/001 , G11B5/66 , H01F3/02 , H01F10/3236 , H01F10/324 , H01F10/325 , H01F10/3254 , H01F41/02
摘要： A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
摘要翻译： 层叠结构包括第一磁性层，第二磁性层，设置在第一和第二磁性层之间的第一间隔件和设置在第二磁性层上的第二间隔件。
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公开(公告)号：US20150200231A1
公开(公告)日：2015-07-16
申请号：US14155552
申请日：2014-01-15
CPC分类号： H01L27/22 , G11B5/3163 , H01F1/14708 , H01F7/021 , H01F10/14 , H01F27/24 , H01F27/2804 , H01F2027/2809 , H01L27/0641 , H01L27/224 , H01L28/10 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
摘要翻译： 提供了一种用于集成层压磁性装置的机构。 基板和多层堆叠结构形成该装置。 多层堆叠结构包括在基板上形成的交替磁层和二极管结构。 多层堆叠结构中的每个磁性层通过二极管结构与多层堆叠结构中的另一磁性层分离。
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公开(公告)号：US20150140687A1
公开(公告)日：2015-05-21
申请号：US14608841
申请日：2015-01-29
CPC分类号： B81C1/00373 , B81B3/0021 , B81B2201/038 , B81B2203/0118 , B81C1/00142 , B81C1/00706 , B81C2201/0188 , H01F41/046 , H01L28/10 , H01L43/10 , H01L43/12 , H01L43/14
摘要： A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
摘要翻译： 公开了一种微机电装置及其制造方法。 在硅衬底上形成牺牲层。 在牺牲层的顶表面上形成金属层。 将软磁性材料无电沉积在金属层上以制造微机电装置。 除去牺牲层以产生与硅衬底分离的金属束。
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