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    METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS
    11.
    发明申请
    METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS 审中-公开
    生产高密度过氧化物的方法和装置

    公开(公告)号：US20140102888A1

    公开(公告)日：2014-04-17

    申请号：US14046720

    申请日：2013-10-04

    Applicant: Intevac, Inc.

    Inventor： Samuel D. Harkness, IV ,  Terry Bluck ,  Michael A. Russak ,  Quang N. Tran ,  David Ward Brown

    IPC: C23C14/35

    CPC classification number: C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/345

    Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

    Abstract translation: 提供了一种沉积系统，其中具有相似组成的导电靶位于彼此相对的位置。 该系统与衬底平行排列，衬底位于所得到的等离子体的外部，其主要被限制在两个阴极之间。 形成“等离子体笼”，其中碳原子与加速电子碰撞并被高度电离。 电子被捕获在等离子体笼内，而电离的碳原子沉积在衬底的表面上。 由于电子被限制在等离子体笼中，所以不会发生衬底损坏或加热。 另外，用于点燃和维持等离子体并从靶溅射碳原子的氩原子不会到达衬底，以避免损坏衬底。

    METHOD TO PRODUCE HIGHLY TRANSPARENT HYDROGENATED CARBON PROTECTIVE COATING FOR TRANSPARENT SUBSTRATES
    12.
    发明申请
    METHOD TO PRODUCE HIGHLY TRANSPARENT HYDROGENATED CARBON PROTECTIVE COATING FOR TRANSPARENT SUBSTRATES 有权
    生产用于透明基板的高透明加氢碳保护涂层的方法

    公开(公告)号：US20140008214A1

    公开(公告)日：2014-01-09

    申请号：US13935993

    申请日：2013-07-05

    Applicant: Intevac, Inc.

    Inventor： David Fang Wei Chen ,  David Ward Brown ,  Charles Liu ,  Samuel D. Harkness, IV

    IPC: C23C14/34

    CPC classification number: C23C14/0057 ,  C23C14/0605 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3426

    Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

    Abstract translation: 用于沉积透明且透明的氢化碳（例如氢化金刚石样碳）的物理气相沉积（PVD）室。 室主体被构造成用于在其中维持真空条件，腔体在其侧壁上具有孔。 具有孔口的等离子体保持架附接到侧壁，使得孔口与孔口重叠。 两个溅射靶位于等离子体笼内部的阴极上，并且彼此相对定向，并且被配置为在等离子体笼内保持等离子体并限制在其间。 笼内的等离子体从靶中溅出材料，然后其通过孔口和孔径并落在基底上。 在处理过程中，基板以传递方式连续移动。

    CREATION OF DISTRIBUTED VOIDS IN THIN FILMS
    15.
    发明申请
    CREATION OF DISTRIBUTED VOIDS IN THIN FILMS 有权

    公开(公告)号：US20210355579A1

    公开(公告)日：2021-11-18

    申请号：US17306054

    申请日：2021-05-03

    Applicant: INTEVAC, INC.

    Inventor： Terry Bluck ,  Samuel D. Harkness, IV

    IPC: C23C14/58 ,  C23C14/02 ,  C23C14/04

    Abstract: A method for forming thin film layer having micro-voids therein. The method proceeds by dispersing micro-particles over the surface of a substrate. The micro particles are made of sublimable material. Then the thin film layer is formed over the surface, so as to cover the particles. The thin film is then etched back so as to expose the particles at least partially. The material of the particles is then sublimed, e.g., by heating the substrate, thereby leaving micro-voids inside the thin film layer. The micro voids can be filled or remain exposed to generate textured surface.

    Multifocal magnetron design for physical vapor deposition processing on a single cathode
    16.
    发明授权
    Multifocal magnetron design for physical vapor deposition processing on a single cathode 有权

    公开(公告)号：US12283470B2

    公开(公告)日：2025-04-22

    申请号：US17822107

    申请日：2022-08-24

    Applicant: Intevac, Inc.

    Inventor： Samuel D. Harkness, IV ,  Quang N. Tran

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

    Abstract: An apparatus has a keeper plate with a keeper plate outer perimeter. An annular magnet array with an annular magnet array outer perimeter is coincident with the keeper plater outer perimeter. An inner top magnet is positioned on a centerline of a first side of the keeper plate and an inner bottom magnet is positioned on the centerline of a second side of the keeper plate. The inner top magnet is of a first magnetic orientation and the annular magnet array and the inner bottom magnet have a second magnetic orientation opposite the first magnetic orientation to form a magnetic field environment that provides plasma confinement of ionizing electrons which causes a gas operative as a reactive gas and sputter gas to become ionized and subsequently be directed to a target cathode while simultaneously causing the ionization of sputtered species which are dispersed across a substrate.

    SUBSTRATE CARRIER FOR THIN FILM PROCESSING
    18.
    发明公开
    SUBSTRATE CARRIER FOR THIN FILM PROCESSING 审中-公开

    公开(公告)号：US20240191342A1

    公开(公告)日：2024-06-13

    申请号：US18534479

    申请日：2023-12-08

    Applicant: INTEVAC, INC.

    Inventor： Samuel D. Harkness, IV ,  Thomas P. Nolan ,  Stephen M. Daly ,  Mike Anthony ,  Todd Morimoto

    IPC: C23C14/50 ,  C23C14/34

    CPC classification number: C23C14/50 ,  C23C14/34

    Abstract: Embodiments of a substrate carrier are described. The substrate carrier includes a carrier tray having a deposition surface and a set of pedestal positions on the deposition surface. In some embodiments, the set comprises an N×M array of pedestal positions with N≥1 and M≥1. Each pedestal position is adapted to receive a corresponding substrate pedestal, and each pedestal has a working surface adapted to receive a substrate. One or more adjusters are positioned in a corresponding pedestal position. The adjuster can adjust a distance between the deposition surface and the working surface, an angular orientation of the working surface relative to the deposition surface, or both.

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