Abstract:
A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.
Abstract:
A composition includes: at least one polymer represented by formula (1), formula (2), or both; and a solvent. A1 and A2 are each independently a structural unit having 2 or more carbon atoms; a plurality of A's are the same or different and a plurality of A2s are the same or different; n1 and n2 are each independently an integer of 2 to 500; R1, R2, and R3 are each independently an organic group having 1 or more carbon atoms, or R1 and R2 taken together represent a ring together with X1, Y1, and P; R1 and R2 are the same or different; X1, Y1, and Y2 are each independently a single bond, —O—, or —NR4—; R4 is an organic group having 1 or more carbon atoms; and Z1 and Z2 are each independently hydrogen or an organic group having 1 to 15 carbon atoms.
Abstract:
A pattern-forming method includes applying a first composition on a surface layer of a substrate to form a first coating film. The surface layer includes a first region which includes a metal atom, and a second region which includes a silicon atom. The first coating film is heated. A portion other than a portion formed on the first region or a portion other than a portion formed on the second region of the first coating film heated is removed, thereby forming a first lamination portion. A second composition is applied on the substrate on which the first lamination portion is formed to form a second coating film. The second coating film is heated or exposed. A portion other than a portion formed on the first lamination portion of the second coating film heated or exposed is removed, thereby forming a second lamination portion.
Abstract:
A modification method of a surface of a substrate includes: applying a composition on a surface of a metal substrate, and heating a coating film formed by the applying, wherein the composition contains: a polymer having a first structural unit that includes an aromatic ring, and a second structural unit that includes an ethylenic double bond; a thermal acid generating agent; and a solvent, wherein the polymer has a functional group capable of bonding to a metal atom in the metal substrate.
Abstract:
A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including a metal. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the metal. It is preferred that the base material further includes a second region comprising substantially only a non-metal, and the method further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film. The metal is preferably a constituent of a metal substance, an alloy, an oxide, an electrically conductive nitride or a silicide.
Abstract:
A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R′ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.
Abstract:
A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes a crosslinkable group in a side chain thereof. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.
Abstract:
A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers, and an acid generator. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes an acid-labile group in a side chain thereof. The acid generator generates an acid upon application of energy. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.
Abstract:
A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.
Abstract:
A pattern-forming method includes applying a first composition on a surface layer of a substrate to form a first coating film. The surface layer includes a first region which includes a metal atom, and a second region which includes a silicon atom. The first coating film is heated. A portion other than a portion formed on the first region or a portion other than a portion formed on the second region of the first coating film heated is removed, thereby forming a first lamination portion. A second composition is applied on the substrate on which the first lamination portion is formed to form a second coating film. The second coating film is heated or exposed. A portion other than a portion formed on the first lamination portion of the second coating film heated or exposed is removed, thereby forming a second lamination portion.