公开(公告)号：US20090116523A1

公开(公告)日：2009-05-07

申请号：US12117710

申请日：2008-05-08

Applicant: Young-Ahn LEEM ,  Jung-Ho Song ,  Ki-Soo Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Young-Ahn LEEM ,  Jung-Ho Song ,  Ki-Soo Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: H01S5/00

CPC classification number: G02B6/12004 ,  G02B2006/12121 ,  G02B2006/12152 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/32316 ,  H01S5/32333

Abstract: Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.

Abstract translation: 提供了一种混合激光二极管。 混合激光二极管包括：构成平板波导的硅层; 以及配置在硅层上以构成沟道波导的化合物半导体层。

公开(公告)号：US20080197916A1

公开(公告)日：2008-08-21

申请号：US11908837

申请日：2006-03-07

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

IPC: H03K5/00 ,  H01L27/00

CPC classification number: H01L49/003

Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Abstract translation: 提供一种使用突变金属 - 绝缘体转变（MIT）器件的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。 突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。 因此，可以有效地消除低电压噪声。

公开(公告)号：US5770869A

公开(公告)日：1998-06-23

申请号：US717905

申请日：1996-09-23

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: B82Y10/00 ,  H01L29/7376

Abstract: A resonant tunneling hot electron device uses an interband tunneling double barrier structure as an electron injection layer and is capable of increasing PVR and peak current using an enhanced resonant interband tunneling effect through alignment of a hole confined state and an electron confined state by a Stark shift effect. It includes a conductive collector layer formed on a substrate; a conductive base layer having a conduction band minimum lower than that of the emitter barrier layer and the collector barrier layer and having high electron mobility; a collector barrier layer formed between the base layer and the collector layer; and an electron injection electron barrier layer of an enhanced interband resonant tunneling quantum well broken band gap heterostructure formed between the emitter layer and the base layer. This structure exploits an enhanced resonant tunneling effect due to alignments of quantum confined states by Stark shifts.

Abstract translation: 谐振隧道热电子器件使用带间隧穿双阻挡结构作为电子注入层，并且能够通过利用斯塔克位移对空穴限制状态和电子约束状态的增强的谐振带间隧穿效应来增加PVR和峰值电流 影响。 它包括形成在基底上的导电收集层; 导电基层，其导带的最小值低于发射极阻挡层和集电极阻挡层的导带，并具有高的电子迁移率; 形成在所述基底层和所述集电体层之间的集电极阻挡层; 以及在发射极层和基极层之间形成的增强的带间谐振隧穿量子阱断裂带隙异质结构的电子注入电子势垒层。 该结构利用由Stark偏移量化限制状态的对齐而增强的谐振隧穿效应。

公开(公告)号：US08183633B2

公开(公告)日：2012-05-22

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US08165437B2

公开(公告)日：2012-04-24

申请号：US12684677

申请日：2010-01-08

Applicant: Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/34 ,  G02B6/42

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US07790567B2

公开(公告)日：2010-09-07

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20100159674A1

公开(公告)日：2010-06-24

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/20

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US5770866A

公开(公告)日：1998-06-23

申请号：US736213

申请日：1996-10-25

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88 ,  H01L29/15

CPC classification number: B82Y10/00 ,  H01L29/882

Abstract: The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.

Abstract translation: 本发明提供了一种谐振隧道电子器件，其具有多个几乎去耦的量子势垒层和交替地形成在发射极层和集电极层之间的量子阱层，并且具有堆叠结构，使得它们的堆叠 量子势垒的高度逐渐增加，量子势垒层之间插入的量子阱的宽度逐渐减小，从而在外部偏置的应用下，可能发生通过对准量子与限制状态的电子共振隧穿。

公开(公告)号：US5446293A

公开(公告)日：1995-08-29

申请号：US338117

申请日：1994-11-09

Applicant: Hye-Yong Chu ,  Pyong-Woon Park ,  Seon-Gyu Han ,  Young-Wan Choi ,  Gyung-Ock Kim

Inventor： Hye-Yong Chu ,  Pyong-Woon Park ,  Seon-Gyu Han ,  Young-Wan Choi ,  Gyung-Ock Kim

IPC: H01L31/10 ,  H01L31/0352 ,  H01L27/14 ,  H01L31/00

CPC classification number: B82Y10/00 ,  H01L31/0352

Abstract: Disclosed is an operation principle and an epitaxial structure of resonant tunneling opto-electronic device. According to the present invention, the photo-generated holes stored in front of the double barrier quantum well structure by light illumination. As a result, a large potential drop occurs in the double barrier quantum well structure. And a peak signal of the opto-electronic resonant tunneling device is generated at a relatively lower voltage illumination to one generated before introducing the light into the device. An amount of photocurrent is 10.sup.3 times and over as compared to the conventional p-i-n diode because a resonant tunneling current is optically controlled by light illumination. So that, it is possible to drive peripheral circuit without use of additional amplifiers for amplifying an output signal from the opto-electronic device.

Abstract translation: 公开了谐振隧道光电器件的工作原理和外延结构。 根据本发明，通过光照射存储在双重阻挡量子阱结构前面的光生孔。 结果，双重势垒量子阱结构中出现大的电位降。 光电共振隧穿装置的峰值信号在相对较低的电压照明下产生，并将光引入装置之前产生。 与传统的p-i-n二极管相比，光电流量是103倍以上，因为谐振隧穿电流是通过光照射来光学控制的。 因此，可以驱动外围电路而不使用用于放大来自光电子器件的输出信号的附加放大器。

公开(公告)号：US08017420B2

公开(公告)日：2011-09-13

申请号：US12491443

申请日：2009-06-25

Applicant: In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/00

CPC classification number: G02B6/136 ,  G02B6/132

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。