公开(公告)号：US20090314205A1

公开(公告)日：2009-12-24

申请号：US12144485

申请日：2008-06-23

申请人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

发明人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

IPC分类号： B05C11/00

CPC分类号： G02B23/2492

摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cur-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

摘要翻译： 公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。 照相机通过管道镜捕获图像。 通过反射护套和红外线（IR）截止滤波器，保护套管免受高温的影响。 可以在监视器上观看图像，并且可以由视频记录装置记录。 图像也可以由机器视觉系统处理。 该系统可以监测基座和基座和周围的结构。 可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。 可以采取基于偏差检测的操作来改善过程的性能。 还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

公开(公告)号：US20070259112A1

公开(公告)日：2007-11-08

申请号：US11697516

申请日：2007-04-06

申请人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

发明人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

IPC分类号： C23C16/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B35/00 ,  C23C16/45561 ,  C30B25/14 ,  Y10T117/10

摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

摘要翻译： 本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。 公开了许多其他方面。

公开(公告)号：US20060208215A1

公开(公告)日：2006-09-21

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

IPC分类号： C04B35/00

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

公开(公告)号：US20050009371A1

公开(公告)日：2005-01-13

申请号：US10913941

申请日：2004-08-06

申请人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

发明人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

IPC分类号： C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02307 ,  C23C14/083 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/78

摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

公开(公告)号：US20120282714A1

公开(公告)日：2012-11-08

申请号：US13530238

申请日：2012-06-22

申请人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

IPC分类号： H01L21/66

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 描述了用于提供感受器背面恒定发射率的方法和装置。 提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US08226770B2

公开(公告)日：2012-07-24

申请号：US11744760

申请日：2007-05-04

申请人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。 还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US07547952B2

公开(公告)日：2009-06-16

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

IPC分类号： H01L29/72 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L21/10 ,  H01L21/26

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

公开(公告)号：US20080044569A1

公开(公告)日：2008-02-21

申请号：US11925681

申请日：2007-10-26

申请人： Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

发明人： Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

IPC分类号： C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

摘要： Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：US08951351B2

公开(公告)日：2015-02-10

申请号：US11868289

申请日：2007-10-05

申请人： Kailash Kiran Patalay ,  Craig Metzner ,  Jean Vatus

发明人： Kailash Kiran Patalay ,  Craig Metzner ,  Jean Vatus

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  C23C16/455 ,  H01L21/687

CPC分类号： C23C16/4585 ,  C23C16/45521 ,  H01L21/68728 ,  H01L21/68735

摘要： Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.

摘要翻译： 本文提供了在外延沉积工艺期间减少衬底上自动掺杂和背面缺陷的方法和装置。 在一些实施例中，用于减少衬底上的自动掺杂和背面缺陷的装置包括衬底支撑环，衬底支撑环具有衬底保持器结构，该衬底支撑结构构造成将衬底支撑在沿着由衬底背面限定的边缘处理的位置， 衬底或沿着边缘上或附近的多个离散点; 以及间隔环，用于将衬底支撑环定位在基座板上方以限定基座板和衬底背面之间的衬底间隙区域，间隔环包括穿过其中形成的多个开口，其有助于气体进入和离开 的衬底间隙区域。

公开(公告)号：US08726837B2

公开(公告)日：2014-05-20

申请号：US12144485

申请日：2008-06-23

申请人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

发明人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

IPC分类号： B05C11/00 ,  C23C16/00 ,  G01N21/00 ,  G01J5/00

CPC分类号： G02B23/2492

摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cut-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

摘要翻译： 公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。 照相机通过管道镜捕获图像。 通过反光护套和红外（IR）截止滤光片，保护套管免受高温的影响。 可以在监视器上观看图像，并且可以由视频记录装置记录。 图像也可以由机器视觉系统处理。 该系统可以监测基座和基座和周围的结构。 可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。 可以采取基于偏差检测的操作来改善过程的性能。 还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。