公开(公告)号：US09086606B2

公开(公告)日：2015-07-21

申请号：US12972750

申请日：2010-12-20

申请人： Jun Koyama

发明人： Jun Koyama

IPC分类号： H01L27/15 ,  G02F1/1362 ,  H01L21/02 ,  H01L29/36 ,  G02F1/136

摘要： To provide a display device which can realize multi-gray scale display by reducing voltage fluctuation of a pixel, a display device includes a plurality of source signal lines, a plurality of gate signal lines which is provided so as to intersect with the source signal lines, and a pixel electrode to which a signal voltage of the source signal line is applied through a transistor including an oxide semiconductor, which is provided near an intersection portion of the source signal line and the gate signal line; in which in the pixel electrode which is provided between a pair of the adjacent source signal lines, edge portions thereof overlap with edge portions of the source signal lines and an overlapped area with one of the source signal lines is substantially equal to an overlapped area with the other source signal line.

公开(公告)号：US09035859B2

公开(公告)日：2015-05-19

申请号：US13367711

申请日：2012-02-07

申请人： Shunpei Yamazaki ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Jun Koyama

IPC分类号： G09G3/36 ,  G09G3/00 ,  G02F1/1347 ,  G02B27/22 ,  H04N13/04 ,  G02B27/00

CPC分类号： G09G3/003 ,  G02B27/0093 ,  G02B27/2214 ,  G02F1/13471 ,  G09G3/3611 ,  H04N13/31 ,  H04N13/315 ,  H04N13/356 ,  H04N13/373

摘要： A display device includes a display panel and a shutter panel that is provided on the viewer side of the display panel and includes a first liquid crystal element and a second liquid crystal element adjacent to each other. In a first display state, a first light-shielding region and a first light-transmitting region are formed in the shutter panel by the first liquid crystal element, and light from the display panel is emitted through the first light-transmitting region. In a second display state, a second light-shielding region larger than the first light-shielding region and a second light-transmitting region smaller than the first light-transmitting region are formed in the shutter panel by the first liquid crystal element and the second liquid crystal element, and light from the display panel is emitted through the second light-transmitting region.

摘要翻译： 显示装置包括显示面板和快门面板，其设置在显示面板的观察者侧，并且包括彼此相邻的第一液晶元件和第二液晶元件。 在第一显示状态下，通过第一液晶元件在快门面板中形成第一遮光区域和第一透光区域，并且通过第一透光区域发射来自显示面板的光。 在第二显示状态下，通过第一液晶元件在快门面板上形成比第一遮光区域大的第二遮光区域和小于第一透光区域的第二透光区域， 液晶元件，并且来自显示面板的光通过第二透光区域发射。

公开(公告)号：US08957836B2

公开(公告)日：2015-02-17

申请号：US11730617

申请日：2007-04-03

申请人： Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai

发明人： Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai

IPC分类号： G09G3/30 ,  G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2320/0223 ,  G09G2320/0233 ,  G09G2340/0492

摘要： A light emitting device capable of suppressing drop in luminance or luminance unevenness of a light emitting element due to deterioration of an electro luminescent material and capable of switching an image direction vertically to horizontally without a frame memory additionally provided. The light emitting device of the invention comprises in each pixel first to fourth transistors, a light emitting element, and a signal line. The first transistor and the second transistor control the connection between the signal line and a gate of the third transistor, the fourth transistor controls a current value supplied to the light emitting element, and the third transistor selects whether the current is supplied to the light emitting element or not. Further, the first transistor and the second transistor are switched separately.

摘要翻译： 一种发光装置，其能够抑制由于电致发光材料的劣化导致的发光元件的亮度或亮度不均匀性的下降，并能够在没有帧存储器的情况下垂直地水平切换图像方向。 本发明的发光器件在每个像素中包括第一至第四晶体管，发光元件和信号线。 第一晶体管和第二晶体管控制信号线与第三晶体管的栅极之间的连接，第四晶体管控制提供给发光元件的电流值，第三晶体管选择电流是否被提供给发光 元素或不。 此外，第一晶体管和第二晶体管分开切换。

公开(公告)号：US08952726B2

公开(公告)日：2015-02-10

申请号：US12902670

申请日：2010-10-12

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： H03K19/00 ,  H03K19/0175 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L27/12 ,  G09G3/20 ,  G09G3/32 ,  H01L29/786

CPC分类号： H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

摘要翻译： 为了减小晶体管的漏电流，可以抑制逻辑电路的故障。 逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。 作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。 作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

公开(公告)号：US08952455B2

公开(公告)日：2015-02-10

申请号：US13245065

申请日：2011-09-26

申请人： Jun Koyama

发明人： Jun Koyama

IPC分类号： H01L21/70 ,  H01L27/12 ,  H01L29/02 ,  H01L29/66 ,  G09G3/36 ,  H03F1/02 ,  H03F1/22 ,  H03F3/50 ,  G09G3/20 ,  H01L29/786

CPC分类号： G09G3/3688 ,  G09G3/2074 ,  G09G2330/021 ,  H01L29/78672 ,  H03F1/02 ,  H03F1/223 ,  H03F3/505 ,  H03F2200/51 ,  H03F2200/513

摘要： In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon TFT used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized.

摘要翻译： 在使用模拟缓冲电路的情况下，需要输入与多晶硅TFT的栅极和源极之间的电压相等的电压; 因此，电源电压增加，因此能量消耗随热量增加。 鉴于上述问题，本发明提供了用作诸如源极跟随器电路的模拟缓冲电路中的多晶硅TFT的耗尽型多晶硅TFT。 耗尽型多晶硅TFT在其负电压侧具有阈值电压; 因此，如上所述，不必增加输入电压。 结果，电源电压不需要增加，因此可以实现液晶显示装置的低功耗。

公开(公告)号：US08896777B2

公开(公告)日：2014-11-25

申请号：US13230997

申请日：2011-09-13

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1345

CPC分类号： H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

摘要翻译： 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

公开(公告)号：US08896042B2

公开(公告)日：2014-11-25

申请号：US12914672

申请日：2010-10-28

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC分类号： H01L27/108 ,  H01L29/94 ,  G11C16/04 ,  H01L27/12 ,  H01L27/118 ,  H01L27/115 ,  H01L27/105 ,  G11C11/405 ,  H01L29/78 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L27/1052 ,  G11C11/405 ,  G11C16/0433 ,  G11C2211/4016 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7833 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

摘要翻译： 目的是提供具有新颖结构的半导体器件。 半导体器件包括第一布线; 第二布线 第三线; 第四布线 具有第一栅电极，第一源电极和第一漏电极的第一晶体管; 以及具有第二栅电极，第二源电极和第二漏电极的第二晶体管。 第一晶体管设置在包括半导体材料的衬底中。 第二晶体管包括氧化物半导体层。

公开(公告)号：US08872331B2

公开(公告)日：2014-10-28

申请号：US13084996

申请日：2011-04-12

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Takaaki Koen ,  Yuto Yakubo ,  Makoto Yanagisawa ,  Hisashi Ohtani ,  Eiji Sugiyama ,  Nozomi Horikoshi

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Takaaki Koen ,  Yuto Yakubo ,  Makoto Yanagisawa ,  Hisashi Ohtani ,  Eiji Sugiyama ,  Nozomi Horikoshi

IPC分类号： H01L23/10 ,  H01L23/31 ,  H01L23/29

CPC分类号： G06K19/07735 ,  G06K19/07722 ,  G06K19/07794 ,  H01L23/295 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.

摘要翻译： 一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。 半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。 在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。 其中一个结构体设置在片上天线和增强天线之间。 在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

公开(公告)号：US08866707B2

公开(公告)日：2014-10-21

申请号：US11389092

申请日：2006-03-27

申请人： Jun Koyama ,  Hiroyuki Miyake ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Hiroyuki Miyake ,  Shunpei Yamazaki

IPC分类号： G09G3/32

CPC分类号： G09G3/3258 ,  G09G3/2022 ,  G09G3/2025 ,  G09G3/2037 ,  G09G3/2092 ,  G09G5/399 ,  G09G2300/0417 ,  G09G2300/0443 ,  G09G2300/0857 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/145 ,  G09G2360/02 ,  G09G2360/18

摘要： In a display device using a delta arrangement, in a case where a circuit of a large number of elements such as a static memory is arranged every pixel, a wire becomes complicated to cause wiring delay. A shape of a pixel electrode is formed polygonally to arrange in a case where the number of elements such as a static memory is large or in a case where an area of an element required to be included in a pixel is large in a delta arrangement. The shape of the pixel electrode is arranged in a polygon so that a wire along a pixel shape can be used. Even in a case of a pixel with a large number of elements, parasitic resistance of a wire and parasitic capacitance of a wire can be reduced so that wiring delay can be solved.

摘要翻译： 在使用三角形排列的显示装置中，在每个像素布置诸如静态存储器等大量元件的电路的情况下，导线变得复杂，导致布线延迟。 在诸如静态存储器的元件的数量大的情况下或者在像素中需要包括的元件的面积以三角形排列较大的情况下，像素电极的形状被多边形成。 像素电极的形状被布置成多边形，使得可以使用沿着像素形状的线。 即使在具有大量元件的像素的情况下，也可以减少导线的寄生电阻和布线的寄生电容，从而可以解决布线延迟。

公开(公告)号：US08854191B2

公开(公告)日：2014-10-07

申请号：US11716042

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： H04Q5/22 ,  G06K19/07

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  G06K19/0702

摘要： To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.

摘要翻译： 为了提供一种包括RFID的半导体器件，其可以根据用于驱动的​​电池的劣化随时检测电池的剩余电量或电池的替换操作而发送和接收各个信息，并且可以保持优异的状态 即使在来自外部的无线电波或电磁波的功率不足的情况下，也可以发送和接收个别信息。 提供电池（也称为二次电池）作为向RFID提供电力的电源。 然后，当从外部接收的信号获得的功率大于预定功率时，其剩余功率被存储在电池中; 并且当从外部接收的信号获得的功率小于预定功率时，从电池获得的功率用于驱动电力。