公开(公告)号：US11531961B2

公开(公告)日：2022-12-20

申请号：US17010695

申请日：2020-09-02

申请人： Frederick Wu

发明人： Frederick Wu

IPC分类号： G06Q10/08 ,  G06Q20/20 ,  G06Q10/04

摘要： A method of managing information concerning the supply chain of a perishable commodity utilizing a data repository capturing multiple data sources. The method further includes the collating of the data into a chain of custody information representation for use by data contributors.

公开(公告)号：US20070235059A1

公开(公告)日：2007-10-11

申请号：US11400663

申请日：2006-04-07

申请人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

发明人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC分类号： B08B6/00 ,  C25F1/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

摘要翻译： 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

公开(公告)号：US20050287807A1

公开(公告)日：2005-12-29

申请号：US11206491

申请日：2005-08-18

申请人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

发明人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US06548402B2

公开(公告)日：2003-04-15

申请号：US09330696

申请日：1999-06-11

申请人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

发明人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

IPC分类号： C23C1634

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

摘要翻译： 使用氨（NH 3）与四氯化钛（TiCl 4）之间的反应形成氮化钛（TiN）层的方法。 在一个实施方案中，使用约8.5的NH 3 :TiCl 4比率在约20托的压力下在约500℃的温度下沉积TiN层。 在另一个实施例中，通过使用具有不同NH 3 :TiCl 4比率的工艺条件交替沉积不同厚度的TiN层来形成复合TiN层。 在一个优选的实施方案中，以大约85的NH 3 :TiCl 4比例形成小于约的TiN层，然后以约8.5的NH 3 :TiCl 4比率沉积较厚的TiN层。 通过使用两种不同的工艺条件重复替代膜沉积，形成复合TiN层。 与标准TiN工艺相比，该复合TiN层具有改进的整体台阶覆盖和减小的应力，适用于小型几何填塞应用。

公开(公告)号：US20070119370A1

公开(公告)日：2007-05-31

申请号：US11556745

申请日：2006-11-06

申请人： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，处理室被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。 处理室包括能够被电绝缘，电接地或RF通电的部件。 在一个示例中，室主体和气体歧管组件由诸如绝缘盖，等离子体屏幕插件和隔离环之类的电绝缘部件接地并分离。 一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。 本发明的其它实施例提供沉积工艺以在处理室内形成材料层。

公开(公告)号：US20070077750A1

公开(公告)日：2007-04-05

申请号：US11470473

申请日：2006-09-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： H01L21/28562 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.

摘要翻译： 本发明的实施方案提供了一种通过诸如原子层沉积（ALD）和等离子体增强型ALD（PE-ALD）之类的各种气相沉积工艺在基片上沉积钌材料的方法。 在一个方面，该方法很少或没有引发延迟并且在形成钌材料时保持快速的沉积速率。 钌材料可以以良好的阶梯覆盖，强粘附性沉积，并且包含低碳浓度用于高电导率。 用于在基底上沉积钌材料的方法通常包括在ALD工艺期间将衬底顺序地暴露于吡咯基钌前体和试剂。 吡咯钌前体含有钌和至少一个吡咯基配体。 在一些实例中，在PE-ALD工艺期间，试剂可以含有氨，氮或氢的等离子体。 在其他实例中，在热ALD工艺期间可以使用还原气体。

公开(公告)号：US06221174B1

公开(公告)日：2001-04-24

申请号：US09248869

申请日：1999-02-11

申请人： Fufa Chen ,  Yin Lin ,  Jianhua Hu ,  Frederick Wu ,  Ming Xi ,  Li Wu

发明人： Fufa Chen ,  Yin Lin ,  Jianhua Hu ,  Frederick Wu ,  Ming Xi ,  Li Wu

IPC分类号： C23C824

CPC分类号： C23C16/0281 ,  H01L21/28568

摘要： The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.

摘要翻译： 本发明是提高由四氯化钛（TiCi4）和氨（NH3）的反应形成的钛（Ti）/氮化钛（TiN）CVD膜的一体化的可靠性的晶片处理方法。 对Ti膜进行NH 3气处理，使Ti膜不受氯和氯化氢侵蚀。 使用热TiCl 4 / NH 3反应将TiN膜的薄晶种层沉积在处理的Ti膜上。 随后在种子层上的TiN膜沉积导致Ti / TiN膜叠层的成功整合，使Ti膜厚度达到约300。

公开(公告)号：US20070128862A1

公开(公告)日：2007-06-07

申请号：US11556756

申请日：2006-11-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/44 ,  H01L23/34

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。 喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。 等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。 开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。

公开(公告)号：US20070128863A1

公开(公告)日：2007-06-07

申请号：US11556758

申请日：2006-11-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。 在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道 。 在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。 绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

公开(公告)号：US20070119371A1

公开(公告)日：2007-05-31

申请号：US11556752

申请日：2006-11-06

申请人： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The lid assembly comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, the lid assembly comprises a grounded gas manifold assembly positioned above electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，盖组件被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。 盖组件包括能够被电绝缘，电接地或RF通电的部件。 在一个示例中，盖组件包括位于电绝缘部件上方的接地气体歧管组件，例如绝缘帽，等离子体屏幕插入件和隔离环。 一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。 本发明的其它实施例提供沉积工艺以在处理室内形成材料层。