公开(公告)号：US06548402B2

公开(公告)日：2003-04-15

申请号：US09330696

申请日：1999-06-11

申请人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

发明人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

IPC分类号： C23C1634

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

摘要翻译： 使用氨（NH 3）与四氯化钛（TiCl 4）之间的反应形成氮化钛（TiN）层的方法。 在一个实施方案中，使用约8.5的NH 3 :TiCl 4比率在约20托的压力下在约500℃的温度下沉积TiN层。 在另一个实施例中，通过使用具有不同NH 3 :TiCl 4比率的工艺条件交替沉积不同厚度的TiN层来形成复合TiN层。 在一个优选的实施方案中，以大约85的NH 3 :TiCl 4比例形成小于约的TiN层，然后以约8.5的NH 3 :TiCl 4比率沉积较厚的TiN层。 通过使用两种不同的工艺条件重复替代膜沉积，形成复合TiN层。 与标准TiN工艺相比，该复合TiN层具有改进的整体台阶覆盖和减小的应力，适用于小型几何填塞应用。

公开(公告)号：US06242347B1

公开(公告)日：2001-06-05

申请号：US09163711

申请日：1998-09-30

申请人： Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

发明人： Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC分类号： H01L2144

CPC分类号： H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

摘要翻译： 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在利用该腔室以沉积这种材料之前，在室的内表面上沉积薄的钛保护膜。 在每次两级清洁之后补充保护层。

公开(公告)号：US20050287807A1

公开(公告)日：2005-12-29

申请号：US11206491

申请日：2005-08-18

申请人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

发明人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US06221174B1

公开(公告)日：2001-04-24

申请号：US09248869

申请日：1999-02-11

申请人： Fufa Chen ,  Yin Lin ,  Jianhua Hu ,  Frederick Wu ,  Ming Xi ,  Li Wu

发明人： Fufa Chen ,  Yin Lin ,  Jianhua Hu ,  Frederick Wu ,  Ming Xi ,  Li Wu

IPC分类号： C23C824

CPC分类号： C23C16/0281 ,  H01L21/28568

摘要： The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.

摘要翻译： 本发明是提高由四氯化钛（TiCi4）和氨（NH3）的反应形成的钛（Ti）/氮化钛（TiN）CVD膜的一体化的可靠性的晶片处理方法。 对Ti膜进行NH 3气处理，使Ti膜不受氯和氯化氢侵蚀。 使用热TiCl 4 / NH 3反应将TiN膜的薄晶种层沉积在处理的Ti膜上。 随后在种子层上的TiN膜沉积导致Ti / TiN膜叠层的成功整合，使Ti膜厚度达到约300。

公开(公告)号：US06482746B2

公开(公告)日：2002-11-19

申请号：US09874882

申请日：2001-06-05

申请人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

发明人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC分类号： H01L21302

CPC分类号： H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.

摘要翻译： 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在使用该室以沉积这种材料之前，将薄的钛保护膜沉积在室的内侧。 在每次两级清洁之后补充保护层。

公开(公告)号：US20070234216A1

公开(公告)日：2007-10-04

申请号：US11761158

申请日：2007-06-11

申请人： Gregory Fitzpatrick ,  Frederick Wu

发明人： Gregory Fitzpatrick ,  Frederick Wu

IPC分类号： G06F3/048

CPC分类号： H04L12/1813 ,  H04L51/04

摘要： The present invention provides a method and system for providing contact management to participants engaged in a communication session. The invention permits chat session participants to a communication session to determine common contacts that exists between the chat session participants. Dependent on the accessibility of the particular chat session participants' contact list, other chat session participants to the communication session can view the information located in the contact list. Moreover, a particular chat session participant to the communication session can give either a particular chat session participant or all the chat session participants to the communication session permission to modify their contact list. Permission to access or modify contact lists for chat session participants can be defined prior to establishment of the communication session and/or changed during the communication session. Changes relating to whether a particular contact list is accessible and/or modifiable can be initiated by the chat session participant associated with the contact list. Additionally, such changes can be initiated by a request from a chat session participants to modify the contact records in a particular contact list. The invention can be applicable to systems which can include, but is not limited to, chat rooms, instant messaging, and call conferencing.

摘要翻译： 本发明提供了一种用于向从事通信会话的参与者提供联系人管理的方法和系统。 本发明允许聊天会话参与者进行通信会话以确定在聊天会话参与者之间存在的常见联系人。 根据特定聊天会话参与者的联系人列表的可访问性，通信会话的其他聊天会话参与者可以查看位于联系人列表中的信息。 此外，通信会话的特定聊天会话参与者可以向特定的聊天会话参与者或所有聊天会话参与者授予通信会话许可以修改其联系人列表。 可以在建立通信会话之前定义访问或修改聊天会话参与者的联系人列表的权限和/或在通信会话期间更改。 与特定联系人列表是否可访问和/或可修改有关的更改可以由与联系人列表关联的聊天会话参与者发起。 此外，可以通过来自聊天会话参与者的请求来发起这样的改变，以修改特定联系人列表中的联系人记录。 本发明可以应用于可以包括但不限于聊天室，即时消息和呼叫会议的系统。

公开(公告)号：US20060246699A1

公开(公告)日：2006-11-02

申请号：US11385038

申请日：2006-03-20

申请人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

发明人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

IPC分类号： H01L21/44

CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US11531961B2

公开(公告)日：2022-12-20

申请号：US17010695

申请日：2020-09-02

申请人： Frederick Wu

发明人： Frederick Wu

IPC分类号： G06Q10/08 ,  G06Q20/20 ,  G06Q10/04

摘要： A method of managing information concerning the supply chain of a perishable commodity utilizing a data repository capturing multiple data sources. The method further includes the collating of the data into a chain of custody information representation for use by data contributors.

公开(公告)号：US20070235059A1

公开(公告)日：2007-10-11

申请号：US11400663

申请日：2006-04-07

申请人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

发明人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC分类号： B08B6/00 ,  C25F1/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

摘要翻译： 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

公开(公告)号：US20060074725A1

公开(公告)日：2006-04-06

申请号：US10952935

申请日：2004-09-30

申请人： Ying Huang ,  Makoto Kano ,  Akio Koide ,  Bala Ramachandran ,  Frederick Wu

发明人： Ying Huang ,  Makoto Kano ,  Akio Koide ,  Bala Ramachandran ,  Frederick Wu

IPC分类号： G06F9/44

CPC分类号： G06Q10/04

摘要： A method (and system) for simulating an implementation model of a business solution includes simulating business artifacts that invoke the implementation model of the business solution, at least one of simulating and executing a component of the business solution during at least one intermediate stage of a development and integration lifecycle of the implementation model, and analyzing results from the simulation of the implementation model during said at least one intermediate stage of the development and integration lifecycle of the implementation model, thereby allowing a user to simulate an implementation model using both real solution components and simulated solution components.

摘要翻译： 用于模拟业务解决方案的实现模型的方法（和系统）包括模拟业务工件，其调用业务解决方案的实现模型，至少一个在业务解决方案的至少一个中间阶段中模拟和执行业务解决方案的组件 实现模型的开发和集成生命周期，以及在实施模型的开发和集成生命周期的至少一个中间阶段分析实施模型的模拟结果，从而允许用户使用实际解决方案来模拟实现模型 组件和模拟解决方案组件。