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    High selectivity oxide etch process for integrated circuit structures
    13.
    发明授权
    High selectivity oxide etch process for integrated circuit structures 失效
    集成电路结构的高选择性氧化物蚀刻工艺

    公开(公告)号：US06171974B2

    公开(公告)日：2001-01-09

    申请号：US07826310

    申请日：1992-01-24

    申请人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    发明人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    IPC分类号： H01L21302

    CPC分类号： H01L21/67069 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831

    摘要： A plasma etch process for oxide having high selectivity to silicon is disclosed comprising the use of a mixture of SiF4 and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 1 milliTorr to about 200 milliTorr. Preferably, the etch chamber also contains an exposed silicon surface. The plasma may be generated by a capacitive discharge type plasma generator, if pressures of at least about 50 milliTorr are used, but preferably the plasma is generated by an electromagnetically coupled plasma generator. The high selectivity exhibited by the etch process of the invention permits use of an electromagnetically coupled plasma generator which, in turn, permits operation of the etch process at reduced pressures of preferably from about 1 milliTorr to about 30 milliTorr resulting in the etching of vertical sidewall openings in the oxide layer.

    摘要翻译： 公开了一种对硅具有高选择性的氧化物的等离子体蚀刻工艺，包括在保持在约1毫乇至约200毫乇的压力范围内的蚀刻室中使用SiF 4和一种或多种其它含氟蚀刻气体的混合物。 优选地，蚀刻室还包含暴露的硅表面。 如果使用至少约50毫乇的压力，则等离子体可以由电容放电型等离子体发生器产生，但优选地，等离子体由电磁耦合等离子体发生器产生。 通过本发明的蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在优选约1毫乇至约30毫乇的减压下进行蚀刻工艺，导致垂直侧壁的蚀刻 氧化层中的开口。

    High temperature silicon surface providing high selectivity in an oxide etch process
    14.
    发明授权
    High temperature silicon surface providing high selectivity in an oxide etch process 失效
    高温硅表面在氧化蚀刻工艺中提供高选择性

    公开(公告)号：US06399514B1

    公开(公告)日：2002-06-04

    申请号：US09645924

    申请日：2000-08-24

    申请人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    发明人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    IPC分类号： H01L21302

    CPC分类号： H01L21/67069 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831

    摘要： A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.

    摘要翻译： 一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺，包括流入等离子体反应室中的含氟蚀刻气体，并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度 蚀刻气体的实例包括SiF 4和碳氟化合物气体。 等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器（诸如电感耦合等离子体发生器）产生。 通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在1至30毫托之间的低压下进行蚀刻工艺，导致蚀刻氧化物层中的垂直侧壁。

    VHF/UHF reactor system
    15.
    发明授权
    VHF/UHF reactor system 失效
    VHF / UHF反应堆系统

    公开(公告)号：US5210466A

    公开(公告)日：1993-05-11

    申请号：US852826

    申请日：1992-03-13

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

    摘要： A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

    摘要翻译： 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。

    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
    16.
    发明授权
    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers 失效
    UHF / VHF等离子体，用于在半导体晶片上形成集成电路结构

    公开(公告)号：US5300460A

    公开(公告)日：1994-04-05

    申请号：US32744

    申请日：1993-03-16

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22 ,  H01L21/265

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

    摘要： An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

    摘要翻译： 公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。 低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。 到约30厘米。 高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。 通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发 该过程无需补充电源。 在该频率范围内工作也可能导致微载物效应的降低或消除。

    Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
    17.
    发明授权
    Method for plasma processing using magnetically enhanced plasma chemical vapor deposition 失效
    使用磁增强等离子体化学气相沉积的等离子体处理方法

    公开(公告)号：US5312778A

    公开(公告)日：1994-05-17

    申请号：US618142

    申请日：1990-11-23

    申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

    发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

    IPC分类号： C23C14/35 ,  C23C14/40 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/463

    CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H05H1/46

    摘要： A method for plasma processing characterized by the steps of disposing a wafer proximate to a cathode within a process chamber, releasing a gas into the chamber, applying R.F. power in the VHF/UHF frequency range to the cathode to form a plasma within the chamber, developing a magnetic field within the chamber having flux lines substantially perpendicular to the surface of the wafer, and varying the strength of the magnetic field until a desired cathode sheath voltage is attained. The apparatus includes a chamber, a wafer-supporting cathode disposed within the chamber, a mechanism for introducing gas into the chamber, an R.F. power source coupled to the cathode operating in the frequency from about 50-800 megahertz, an electromagnetic coil disposed around the chamber adapted to develop a magnetic field within the chamber which is substantially perpendicular to the wafer and a variable output power supply coupled to the coil to vary the magnetic field strength and therefore the cathode sheath voltage within the chamber.

    摘要翻译： 一种用于等离子体处理的方法，其特征在于以下步骤：在处理室内设置靠近阴极的晶片，将气体释放到室中，施加R.F. 在VHF / UHF频率范围内的功率到阴极以在室内形成等离子体，在室内形成具有基本上垂直于晶片表面的磁通线的磁场，并且改变磁场的强度，直到所需的阴极 获得鞘电压。 该装置包括腔室，设置在腔室内的晶片支撑阴极，用于将气体引入腔室的机构，R.F. 电源，其耦合到以大约50-800兆赫的频率工作的阴极;设置在所述腔室周围的电磁线圈，其适于在所述腔室内开发基本上垂直于所述晶片的磁场;以及耦合到所述线圈的可变输出电源 以改变室内的磁场强度和因此的阴极护套电压。