公开(公告)号：US20120146045A1

公开(公告)日：2012-06-14

申请号：US13212539

申请日：2011-08-18

申请人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

发明人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

摘要翻译： 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

公开(公告)号：US20120043573A1

公开(公告)日：2012-02-23

申请号：US13214410

申请日：2011-08-22

申请人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

发明人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

IPC分类号： H01L33/50 ,  H01L33/56

CPC分类号： H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/54 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M1−x1Eux1)3−ySi13−zAl3+zO2+uN21−w  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0

摘要翻译： 根据一个实施例的发光器件包括发射波长为250nm至500nm的光的发光元件和设置在发光元件上的荧光层。 荧光层包括具有由下式（1）表示的组成和平均粒径为12μm以上的荧光体。 （M1-x1Eux1）3-ySi13-zAl3 + zO2 + uN21-w（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素 除了Al，稀土元素和IVB族元素，x1，y，z，u和w满足以下关系：0

公开(公告)号：US20130234298A1

公开(公告)日：2013-09-12

申请号：US13601120

申请日：2012-08-31

申请人： Satoshi MITSUGI ,  Toshiyuki OKA ,  Shinya NUNOUE ,  Hiroshi KATSUNO

发明人： Satoshi MITSUGI ,  Toshiyuki OKA ,  Shinya NUNOUE ,  Hiroshi KATSUNO

IPC分类号： H01L23/34 ,  B23K26/20 ,  H01L23/00

CPC分类号： H01L23/34 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/20 ,  B23K2103/56 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29099 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29184 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/75262 ,  H01L2224/75985 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83399 ,  H01L2224/834 ,  H01L2224/83449 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/8346 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83472 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00

摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.

摘要翻译： 根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。 放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。 接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。 接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

公开(公告)号：US20120217471A1

公开(公告)日：2012-08-30

申请号：US13213373

申请日：2011-08-19

申请人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

摘要翻译： 根据一个实施例，一种半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。

公开(公告)号：US20120056216A1

公开(公告)日：2012-03-08

申请号：US13214608

申请日：2011-08-22

申请人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

发明人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

IPC分类号： H01L27/15

CPC分类号： H01L25/0753 ,  C09K11/0883 ,  C09K11/7734 ,  G09F13/20 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

摘要翻译： 根据一个实施例的发光器件包括：板; 多个第一发光单元，每个包括形成在具有绿色荧光体的第一发光元件上的第一发光元件和第一荧光层; 多个第二发光单元，每个包括形成在具有红色荧光体的第二发光元件上的第二发光元件和第二荧光层; 第二荧光层和第一荧光层以介于其间的气体以非接触方式分离; 以及多个第三发光单元，每个包括第三发光元件和形成在第三发光元件上的树脂层，其中没有绿色荧光体和红色荧光体，第三发光单元设置在第一发光单元和第二发光单元之间 发光单元。

公开(公告)号：US20110284908A1

公开(公告)日：2011-11-24

申请号：US13195926

申请日：2011-08-02

申请人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

发明人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

IPC分类号： H01L33/60 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

公开(公告)号：US20140048816A1

公开(公告)日：2014-02-20

申请号：US13729457

申请日：2012-12-28

申请人： Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

发明人： Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/641

摘要： According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10−6 m/K. The first and second semiconductor layer include a nitride semiconductor. The second semiconductor layer is provided between the substrate and the first semiconductor layer. The emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the substrate and the second semiconductor layer. The second intermediate layer is provided between the first intermediate layer and the second semiconductor layer. a surface roughness of a first surface of the substrate contacting the first intermediate layer is less than a thickness of the first intermediate layer.

摘要翻译： 根据一个实施例，半导体发光器件包括金属衬底，第一半导体层，第一半导体层，第二半导体层，发光层，第一中间层和第二中间层。 基板的热膨胀系数不大于10×10 -6 m / K。 第一和第二半导体层包括氮化物半导体。 第二半导体层设置在基板和第一半导体层之间。 发光层设置在第一半导体层和第二半导体层之间。 第一中间层设置在基板和第二半导体层之间。 第二中间层设置在第一中间层和第二半导体层之间。 与第一中间层接触的基板的第一表面的表面粗糙度小于第一中间层的厚度。

公开(公告)号：US20130237036A1

公开(公告)日：2013-09-12

申请号：US13604183

申请日：2012-09-05

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L21/02

CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US20120298952A1

公开(公告)日：2012-11-29

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

IPC分类号： H01L33/06 ,  H01L21/20 ,  H01L29/38

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20120295377A1

公开(公告)日：2012-11-22

申请号：US13222238

申请日：2011-08-31

申请人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

发明人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/22

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。