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25 条记录 (耗时 0.024 秒)

    Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition
    11.
    发明授权
    Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition 失效
    通过化学气相沉积制造衬底以形成单晶金刚石膜的方法

    公开(公告)号：US5755879A

    公开(公告)日：1998-05-26

    申请号：US560078

    申请日：1995-11-17

    申请人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    发明人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  H01L31/10 ,  H03H3/08 ,  C30B29/20

    CPC分类号： C23C16/274 ,  C23C16/0209 ,  C23C16/0254 ,  C30B25/02 ,  C30B29/04

    摘要： A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

    摘要翻译： 提出了一种制造用于通过化学气相沉积（CVD）在大面积上以低成本生长单晶金刚石膜的衬底的方法。 衬底材料是Pt或其合金，其已经经历单次或多次清洁循环，辊压机和高温退火工艺，以使衬底材料的厚度为0.5mm或更小，或最优选为0.2 （111）或两者的角度偏差的（111）晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。 退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性，从而将其投入实际应用中。

    Diamond Schottky diode with oxygen
    12.
    发明授权
    Diamond Schottky diode with oxygen 失效
    金刚石肖特基二极管与氧气

    公开(公告)号：US5352908A

    公开(公告)日：1994-10-04

    申请号：US145307

    申请日：1993-11-03

    申请人： Koji Kobashi ,  Koichi Miyata ,  Kozo Nishimura

    发明人： Koji Kobashi ,  Koichi Miyata ,  Kozo Nishimura

    IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/86 ,  H01L29/872 ,  H01L29/48

    CPC分类号： H01L29/1602 ,  H01L29/872

    摘要： A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.

    摘要翻译： 包括导电衬底，半导体金刚石层和绝缘金刚石层的多层结构的金刚石肖特基二极管和金属电极。 该二极管在反向偏置下具有更大的势垒，因此具有较小的反向电流的整流特性。

    Method for microfabricating diamond
    13.
    发明授权
    Method for microfabricating diamond 失效
    金刚石微加工方法

    公开(公告)号：US5888846A

    公开(公告)日：1999-03-30

    申请号：US86561

    申请日：1998-05-29

    申请人： Koichi Miyata ,  Koji Kobashi ,  Kohei Suzuki ,  Toshihisa Nozawa

    发明人： Koichi Miyata ,  Koji Kobashi ,  Kohei Suzuki ,  Toshihisa Nozawa

    IPC分类号： C30B29/04 ,  B81C1/00 ,  C30B33/08 ,  H01L21/04 ,  H01L21/00 ,  H01L21/335 ,  H01L21/84

    CPC分类号： H01L21/042

    摘要： A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.

    摘要翻译： 金刚石微制造方法包括以下步骤：在金刚石的表面上形成由硅胶旋涂玻璃材料构成的抗蚀剂层; 其中以给定图案用电子束或离子束照射抗蚀剂层; 显影抗蚀剂层以形成给定的图案; 并通过ECR等离子体蚀刻方法或高频等离子体蚀刻方法蚀刻金刚石。

    Diamond films with heat-resisting ohmic electrodes
    17.
    发明授权
    Diamond films with heat-resisting ohmic electrodes 失效
    具有耐热欧姆电极的金刚石薄膜

    公开(公告)号：US5309000A

    公开(公告)日：1994-05-03

    申请号：US50614

    申请日：1993-04-22

    申请人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

    发明人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

    IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L21/28 ,  H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L23/48

    CPC分类号： H01L29/1602 ,  H01L21/0415 ,  H01L24/05 ,  H01L29/45 ,  H01L29/66045 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/14

    摘要： A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.

    摘要翻译： A是金刚石膜上的耐热欧姆电极，包括：p型半导体金刚石膜; 设置在半导体金刚石膜上的掺硼金刚石层; 以及选择性地形成在掺杂硼的金刚石层上的由p型Si制成的电极元件; 其中硼掺杂金刚石层中的硼浓度为1.0×1019至1.8×10 23 cm -3，并且在电极元件中掺杂选自B，Al和Ga中的至少一种杂质，浓度为1.0×10 20 至5.0×1022cm-3。 金刚石膜上的欧姆电极适用于在高温下工作的电子器件。

    Diamond light-emitting element
    18.
    发明授权
    Diamond light-emitting element 失效
    金刚石发光元件

    公开(公告)号：US5612548A

    公开(公告)日：1997-03-18

    申请号：US598618

    申请日：1996-02-12

    申请人： Kimitsugu Saito ,  Koichi Miyata

    发明人： Kimitsugu Saito ,  Koichi Miyata

    IPC分类号： C30B29/04 ,  H01L33/00 ,  H01L33/02 ,  H01L33/34 ,  H01L33/42 ,  H01L33/44 ,  H01L31/0312

    CPC分类号： H01L33/0054 ,  H01L33/025 ,  H01L33/34 ,  H01L33/44

    摘要： A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The boron atom concentration in the first diamond layer is 10.sup.19 cm.sup.-3 or higher. A second diamond layer is formed on the first diamond layer. The second diamond layer has a crystal defect density of 10.sup.11 cm.sup.-2 or higher. A second electrode is formed on the second diamond layer. A power supply is connected to the second electrode and the copper plate. When voltage is applied, holes in the first diamond layer recombine with electrons from the second electrode, and hence light emission takes place. The defect levels in the second diamond layer form the recombination centers to achieve high brightness at low operation voltage.

    摘要翻译： 能够在低工作电压下强烈发光的金刚石发光元件。 导电基板设置在诸如铜的金属板上以形成欧姆接触。 在导电基板上形成第一金刚石层。 第一金刚石层中的硼原子浓度为1019cm -3以上。 在第一金刚石层上形成第二金刚石层。 第二金刚石层的晶体缺陷密度为1011cm -2以上。 在第二金刚石层上形成第二电极。 电源连接到第二电极和铜板。 当施加电压时，第一金刚石层中的空穴与来自第二电极的电子复合，因此发生发光。 第二金刚石层中的缺陷水平形成复合中心，以在低操作电压下实现高亮度。

    Method of making a diamond film
    19.
    发明授权
    Method of making a diamond film 失效
    制作金刚石薄膜的方法

    公开(公告)号：US5427054A

    公开(公告)日：1995-06-27

    申请号：US254762

    申请日：1994-06-06

    申请人： Kimitsugu Saito ,  Koichi Miyata

    发明人： Kimitsugu Saito ,  Koichi Miyata

    IPC分类号： C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L21/205

    CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/278 ,  C30B25/02 ,  C30B29/04

    摘要： A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.

    摘要翻译： 形成高品质金刚石膜的方法，其中非金刚石组分和晶体缺陷显着降低。 通过使用源气体的气相合成在金刚石基板上形成金刚石膜，其中源气体中的氧和碳[0]和[C]的原子浓度分别满足0.01≤ C] /（[C] + [O]）