公开(公告)号：US11087961B2

公开(公告)日：2021-08-10

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20150184296A1

公开(公告)日：2015-07-02

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积（ALD）或分子层沉积（MLD）阻挡涂层的涂层系统。 涂层系统包括流体处理部件，其中内部流体润湿表面限定涂层系统的工艺区域，与部件的工艺区域流体连通的气体供应系统，其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层，以及与组件的处理区域流体连通的排气系统，其中排气系统排出 从组件的工艺区域通过其出口处理气体。

公开(公告)号：US20140315392A1

公开(公告)日：2014-10-23

申请号：US13867522

申请日：2013-04-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Hong Shih ,  Anthony Amadio ,  Rajinder Dhindsa ,  John Michael Kerns ,  John Daugherty

IPC: H01L21/67

CPC classification number: C23C16/4404 ,  H01J37/32477 ,  Y10T428/12736 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/1284 ,  Y10T428/12861 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12979 ,  Y10T428/265 ,  Y10T428/31678

Abstract: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component.

Abstract translation: 半导体等离子体处理室的冷喷涂屏障涂层部件包括具有至少一个金属表面的基板，其中金属表面的一部分被配置成形成电接触。 至少金属表面上的热导电材料形成冷喷涂阻挡涂层，所述金属表面被构造成形成基板的电接触。 此外，冷喷涂阻挡涂层也可以位于组件的等离子体暴露和/或处理气体暴露表面上。

公开(公告)号：US20140113453A1

公开(公告)日：2014-04-24

申请号：US13659328

申请日：2012-10-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  Anthony Amadio ,  Duane Outka ,  Yan Fang ,  Allan Ronne ,  Robert G. O'Neil ,  Rajinder Dhindsa ,  Travis Taylor

IPC: H01L21/3065 ,  H01L21/306 ,  C23C16/32 ,  B32B3/30 ,  B32B15/04 ,  C23C28/00

CPC classification number: C23C16/32 ,  C23C16/4404 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/32 ,  C23C28/322 ,  C23C28/341 ,  C25D5/36 ,  C25D17/001 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/31678

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract translation: 半导体加工设备的碳化钨涂层室组件包括金属表面，可选的中间镍涂层和外碳化钨涂层。 该组件通过任意地在组件的金属表面上沉积镍涂层并在金属表面或镍涂层上沉积碳化钨涂层以形成最外表面来制造。

公开(公告)号：US20210343510A1

公开(公告)日：2021-11-04

申请号：US17305883

申请日：2021-07-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US10967407B2

公开(公告)日：2021-04-06

申请号：US15969626

申请日：2018-05-02

Applicant: Lam Research Corporation

Inventor： Amir A. Yasseri ,  Hong Shih ,  John Daugherty ,  Duane Outka ,  Lin Xu ,  Armen Avoyan ,  Cliff La Croix ,  Girish Hundi

IPC: B08B7/00 ,  B08B7/04 ,  B08B5/02 ,  B08B3/04 ,  B08B3/14 ,  B08B3/12 ,  H01J37/32

Abstract: An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

公开(公告)号：US20190272981A1

公开(公告)日：2019-09-05

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US09337002B2

公开(公告)日：2016-05-10

申请号：US13796751

申请日：2013-03-12

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US20140295670A1

公开(公告)日：2014-10-02

申请号：US13851605

申请日：2013-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  H01L21/67

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。