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公开(公告)号：US10049948B2
公开(公告)日：2018-08-14
申请号：US13690745
申请日：2012-11-30
Applicant: Lam Research Corporation
Inventor： Keith William Gaff , Tom Anderson , Keith Comendant , Ralph Jan-Pin Lu , Paul Robertson , Eric A. Pape , Neil Benjamin
IPC: H01L21/67 , H01L21/66 , H01L21/683
Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.
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公开(公告)号：US09997381B2
公开(公告)日：2018-06-12
申请号：US14175509
申请日：2014-02-07
Applicant: Lam Research Corporation
Inventor： Brian McMillin , Arthur Sato , Neil Benjamin
IPC: H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/768
CPC classification number: H01L21/67069 , H01J37/32009 , H01J37/32082 , H01J37/32642 , H01L21/3065 , H01L21/30655 , H01L21/76898
Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.
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公开(公告)号：US20140045337A1
公开(公告)日：2014-02-13
申请号：US14056604
申请日：2013-10-17
Applicant: Lam Research Corporation
Inventor： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC: H05B1/02 , H01L21/3065 , H05B3/26
CPC classification number: H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
Abstract: An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the heaters to one of the power supply lines and one of the power return lines so as to provide time-averaged power to each of the heaters by time divisional multiplexing of switches of the switching device. The method includes supplying power to each of the heaters sequentially using a time-domain multiplexing scheme.
Abstract translation: 一种示例性的方法是针对支撑半导体衬底的衬底支撑组件中的加热器供电。 支撑组件具有由两个或更多个电源线和两个或更多个电力返回线供电的加热器阵列，其中每个电源线连接到电源，并且至少两个加热器和每个电力回路线连接到 至少两个加热器，以及开关装置，其将每个加热器独立地连接到电源线中的一个和功率返回线之一，以便通过时分复用提供每个加热器的时间平均功率 开关器件的开关。 该方法包括使用时域复用方案依次提供给每个加热器的功率。
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公开(公告)号：USRE47276E1
公开(公告)日：2019-03-05
申请号：US15183726
申请日：2016-06-15
Applicant: Lam Research Corporation
Inventor： Neil Benjamin
Abstract: System and method for providing isolated power to a component that is also subject a set of RF signals that includes at least a first RF signal having a first RF frequency is provided. There is included providing a DC voltage signal and modulating the DC voltage signal into an isolated power signal using an isolation transformer. The isolated power signal has an intermediate frequency that is higher than 60 Hz and lower than the first RF frequency. There is included supplying the DC voltage signal to the primary winding and obtaining the isolated power signal from the secondary winding; and delivering the isolated power to the component using the isolated power signal.
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公开(公告)号：US20170040148A1
公开(公告)日：2017-02-09
申请号：US14817372
申请日：2015-08-04
Applicant: Lam Research Corporation
Inventor： Jason Augustino , John Drewery , Alex Paterson , Neil Benjamin
CPC classification number: H01J37/32596 , H01J37/32082 , H01J37/32559 , H01J37/32568 , H01J37/32577 , H01P3/06
Abstract: A feed tube for a substrate processing system includes an outer tube and a feed rod. The feed rod is arranged within the outer tube. The feed rod is arranged to provide radio frequency power to the substrate processing system and the outer tube provides a return for the radio frequency power. At least one conductor is routed within the feed rod. The conductor is arranged to provide electrical power to at least one component of the substrate processing system separate from the radio frequency power provided by the feed rod.
Abstract translation: 用于基板处理系统的进料管包括外管和进料棒。 进料棒布置在外管内。 馈送杆被布置成向基板处理系统提供射频功率，并且外管为射频功率提供返回。 至少一个导体在进给杆内布置。 导体被布置成向基板处理系统的至少一个部件提供电力，与供电棒提供的射频功率分开。
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Patent Agency Ranking
16.发明授权公开(公告)号：US09392643B2
公开(公告)日：2016-07-12
申请号：US14062216
申请日：2013-10-24
Applicant: Lam Research Corporation
Inventor： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC: H01L21/68 , H01L23/28 , H01L23/52 , F27B5/14 , F27D11/02 , H05B3/00 , C23C14/54 , C23C16/458 , H01L21/67 , H01L21/3065 , H05B1/02 , H05B3/26 , H01L21/683
CPC classification number: H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.
Abstract translation: 用于制造用于基板支撑组件的加热板的示例性方法包括在至少一个片材中形成孔，在导体粉末的浆料上印刷，或者将预切割金属箔压制，或者将导体粉末的浆料喷涂在至少一个片材上 以形成平面加热器区域，电源线和电力返回线。 至少一个片材中的孔填充有导体粉末的浆料，以形成电源和电源返回通孔。 然后将片材对准，压制和结合以形成加热板。
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17.发明申请公开(公告)号：US20150187619A1
公开(公告)日：2015-07-02
申请号：US14594648
申请日：2015-01-12
Applicant: Lam Research Corporation
Inventor： Neil Benjamin , Robert Steger
IPC: H01L21/67 , H01J37/32 , H01L21/683
CPC classification number: H01L21/67248 , H01J37/32724 , H01J2237/2001 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/6833 , H01L21/68714
Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.
Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。
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公开(公告)号：US20140096909A1
公开(公告)日：2014-04-10
申请号：US14101782
申请日：2013-12-10
Applicant: Lam Research Corporation
Inventor： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC: H01L21/67
CPC classification number: H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.
Abstract translation: 用于在等离子体处理室中支撑半导体衬底的半导体衬底支撑体的加热板包括具有加热器阵列阵列的第一层，其可操作以调节半导体衬底上的空间温度分布，以及具有一个或多个初级加热器的第二层 以提供半导体衬底的平均温度控制。 加热板可以结合在基板支撑件中，其中开关装置独立地向每个加热器区域供电，以通过开关的时分复用为每个加热器区域提供时间平均的功率。
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19.发明授权公开(公告)号：US08921740B2
公开(公告)日：2014-12-30
申请号：US13965719
申请日：2013-08-13
Applicant: Lam Research Corporation
Inventor： Neil Benjamin , Robert J. Steger
CPC classification number: H01J37/20 , H01J2237/2001 , H01L21/67103 , H01L21/67248
Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.
Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。
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20.发明授权公开(公告)号：US08884194B2
公开(公告)日：2014-11-11
申请号：US14101782
申请日：2013-12-10
Applicant: Lam Research Corporation
Inventor： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC: H05B3/68 , H05B3/00 , C23C16/458 , H01L21/67 , C23C14/54 , H05B1/02 , H05B3/26 , H01L21/3065 , H01L21/683
CPC classification number: H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.
Abstract translation: 用于在等离子体处理室中支撑半导体衬底的半导体衬底支撑体的加热板包括具有加热器阵列阵列的第一层，其可操作以调节半导体衬底上的空间温度分布，以及具有一个或多个初级加热器的第二层 以提供半导体衬底的平均温度控制。 加热板可以结合在基板支撑件中，其中开关装置独立地向每个加热器区域供电，以通过开关的时分复用为每个加热器区域提供时间平均的功率。
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