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    Light emitting diode chip scale packaging structure and direct type backlight module
    11.
    发明授权
    Light emitting diode chip scale packaging structure and direct type backlight module 有权

    公开(公告)号：US10312408B2

    公开(公告)日：2019-06-04

    申请号：US15722368

    申请日：2017-10-02

    Applicant: Lextar Electronics Corporation

    Inventor： Che-Hsuan Huang ,  Hsin-Lun Su ,  Shu-Hsiu Chang ,  Chih-Hao Lin ,  Tzong-Liang Tsai

    IPC: H01L33/08 ,  H01L33/50 ,  H01L33/56

    Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

    LIGHT-EMITTING DIODE MODULE AND LAMP USING THE SAME
    13.
    发明申请
    LIGHT-EMITTING DIODE MODULE AND LAMP USING THE SAME 有权
    发光二极管模块和灯使用相同

    公开(公告)号：US20160322420A1

    公开(公告)日：2016-11-03

    申请号：US15088616

    申请日：2016-04-01

    Applicant: LEXTAR ELECTRONICS CORPORATION

    Inventor： Fang-Chang Hsueh ,  Yu-Min Lin ,  Chih-Hao Lin ,  Tzong-Liang Tsai

    IPC: H01L27/15 ,  H01L33/58 ,  F21V8/00 ,  H01L33/50 ,  F21V3/00 ,  F21K99/00

    CPC classification number: H01L27/15 ,  F21K9/23 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2105/16 ,  F21Y2115/10 ,  G02B6/0073 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/486 ,  H01L33/505 ,  H01L33/58

    Abstract: A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each light-emitting package includes an optical wavelength conversion layer and a light-emitting diode having a first light-output surface, a bonding surface, and several second light-output surfaces. The bonding surface is opposite the first light-output surface and connected to the substrate. The second light-output surfaces are between the first light-output surface and the bonding surface. The optical wavelength conversion layer covers the first and second light-output surfaces. The distance between the bonding surface and the top surface of the optical wavelength conversion layer represents a light source thickness. The distance between two adjacent light-emitting packages represents a spacing of light sources. Specifically, the ratio of the spacing of light sources to the light source thickness is between 1 and 6.3.

    Abstract translation: 提供了一种发光二极管（LED）模块和使用其的灯。 LED模块包括基板和几个发光封装。 每个发光封装包括光波长转换层和具有第一光输出表面，接合表面和几个第二光输出表面的发光二极管。 接合表面与第一光输出表面相对并连接到基板。 第二光输出面位于第一光输出面和接合面之间。 光波长转换层覆盖第一和第二光输出表面。 光波长转换层的接合面和顶面之间的距离表示光源厚度。 两个相邻的发光封装之间的距离表示光源的间隔。 具体地说，光源间距与光源厚度之比为1〜6.3。

    Light-emitting device
    16.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11362242B2

    公开(公告)日：2022-06-14

    申请号：US16736830

    申请日：2020-01-08

    Applicant: Lextar Electronics Corporation

    Inventor： Chih-Hao Lin ,  Chang-Han Chen ,  Chun-Peng Lin

    IPC: H01L33/58 ,  H01L33/56 ,  H01L33/54

    Abstract: A light-emitting device includes a panel substrate, a light-emitting chip, and a light extracting layer. The light-emitting chip is disposed on the panel substrate. The light extracting layer covers the light-emitting chip and the panel substrate, and the light extracting layer has a side portion. Taking the position where the edge of the light-emitting chip is in contact with the panel substrate as the origin, the side portion and the origin define a circle tangential to the surface of the side portion. The circle has a radius c which satisfies the following formula (1): 1 40 ⁢ H ≤ c ≤ H ( 1 ) where H is a height of the light-emitting chip. The light-emitting device disclosed herein has a light extracting layer having a very small thickness, and provides excellent light-emitting efficiency and lifetime of the light-emitting device.

    Pixel structure
    17.
    发明授权
    Pixel structure 有权

    公开(公告)号：US11018182B2

    公开(公告)日：2021-05-25

    申请号：US16171334

    申请日：2018-10-25

    Applicant: Lextar Electronics Corporation

    Inventor： Yi-Jyun Chen ,  Li-Cheng Yang ,  Yu-Chun Lee ,  Shiou-Yi Kuo ,  Chih-Hao Lin

    IPC: H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/08 ,  H01L33/52 ,  H01L33/38 ,  H01L33/58 ,  H01L33/46

    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

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