Abstract:
A jitter control circuit within a chip comprises an adaptive PDN, a current generator and a jitter generator. The adaptive PDN is capable of being controlled/modulated to provide difference impedances. The current generator is coupled to the adaptive PDN, and is arranged for receiving a supply voltage provided by the adaptive PDN and generating currents with different patterns. The jitter generator is coupled to the adaptive PDN, and is arranged for generating a plurality of jitters corresponding to the currents with different patterns, respectively, according to the supply voltage provided by the adaptive PDN.
Abstract:
A memory interface circuit includes a first variable impedance circuit coupled between a first supply voltage and a pad, and a second variable impedance circuit coupled between a second supply voltage and the pad; wherein when the first supply voltage changes, at least one of the first variable impedance circuit and the second variable impedance circuit is controlled to have different setting in response to the changing of the first supply voltage.
Abstract:
A memory interface circuit includes a plurality of receivers and a signal detector. The plurality of receivers are arranged for receiving at least a clock signal and a plurality of command signals from a memory controller, respectively. The signal detector is arranged for detecting whether the memory interface circuit receives the clock signal or not to generate a detection result to enable or disable the plurality of receivers.
Abstract:
A method for performing signal driving control in an electronic device and an associated apparatus are provided. The method includes: generating a first driving control signal and a second driving control signal according to a data signal, wherein the second driving control signal transits in response to a transition of the data signal, and the first driving control signal includes a pulse corresponding to the transition of the data signal; and utilizing a first switching unit to control a first signal path between a first voltage level and an output terminal of an output stage according to the first driving control signal, and utilizing a second switching unit to control a second signal path between the first voltage level and the output terminal according to the second driving control signal, wherein a first impedance of the first signal path is less than a second impedance of the second signal path.
Abstract:
A method and apparatus for performing impedance profile control of a power delivery network (PDN) in an electronic device are provided. The method includes the steps of: utilizing a capacitive component and a resistive component that are coupled in series as an output stage of the PDN, wherein the capacitive component includes one terminal coupled to a first voltage level of the PDN and further includes another terminal, and the resistive component includes a first terminal coupled to the other terminal of the capacitive component and further includes a second terminal coupled to a second voltage level of the PDN; and inputting a control signal into a third terminal of the resistive component, to control an impedance profile of the output stage of the PDN, wherein in a predetermined state of the control signal, the control signal is a time variant signal. The control signal may be digital or analog.
Abstract:
A method for performing memory interface control of an electronic device and an associated apparatus are provided, where the method includes the steps of: when it is detected that a phase difference between a data signal and a clock signal reaches a predetermined value, controlling the clock signal to switch from a first frequency to a second frequency, wherein both of the clock signal and the data signal are signals of a memory interface circuit of the electronic device, and the memory interface circuit is arranged for controlling a random access memory (RAM) of the electronic device; applying at least one phase shift to the data signal until a condition is satisfied; and controlling the clock signal to switch from the second frequency to the first frequency; wherein the memory interface circuit is calibrated with aid of the at least one phase shift.
Abstract:
A method for performing memory interface calibration in an electronic device, an associated apparatus, and an associated memory controller are provided, where the method includes: controlling a signal on a digital terminal of the memory controller to switch between a plurality of levels, wherein the digital terminal is coupled to a memory of the electronic device; and based on at least one detection result obtained from detecting the signal, calibrating a logical state of the signal to correspond to a level of the plurality of levels. More particularly, the memory controller may include a plurality of command terminals, a plurality of data terminals, and at least one clock terminal, which are used for coupling the memory controller to the memory. For example, the digital terminal may be a command terminal or a data terminal.
Abstract:
A memory module, comprising: a first pin, arranged to receive a first signal; a second pin, arranged to receive second signal; a first conducting path, having a first end coupled to the first pin; at least one memory chip, coupled to the first conducting path for receiving the first signal; a predetermined resistor, having a first terminal coupled to a second end of the first conducting path; and a second conducting path, having a first end coupled to second pin for conducting the second to a second terminal of the predetermined resistor; wherein the first signal and the second are synchronous and configured to be a differential signal, for enabling a selected memory chip from the at least one memory chip to be accessed.
Abstract:
A training method for a memory system is provided. The memory system includes a memory controller and a memory. The memory controller is connected with the memory. The training method includes the following steps. Firstly, the memory samples n command/address signals according to a first signal edge and a second signal edge of a clock signal to acquire a first sampled content and a second sampled content. The memory selectively outputting one of the first sampled content and the second sampled content through m data signals to the memory controller in response to a control signal. Moreover, m is larger than n and smaller than 2n.
Abstract:
A training method for a memory system is provided. The memory system includes a memory controller and a memory. The memory controller is connected with the memory. The training method includes the following steps. Firstly, the memory samples n command/address signals according to a first signal edge and a second signal edge of a clock signal to acquire a first sampled content and a second sampled content. The memory selectively outputting one of the first sampled content and the second sampled content through m data signals to the memory controller in response to a control signal. Moreover, m is larger than n and smaller than 2n.