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    Methods of forming capacitors
    11.
    发明授权
    Methods of forming capacitors 有权

    公开(公告)号：US09887083B2

    公开(公告)日：2018-02-06

    申请号：US14877677

    申请日：2015-10-07

    Applicant: Micron Technology, Inc.

    Inventor： Vassil N. Antonov ,  Vishwanath Bhat

    IPC: H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  C23F1/00 ,  C23F3/00 ,  H01L21/02 ,  H01L21/3105 ,  H01L49/02

    CPC classification number: H01L21/02356 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/3105 ,  H01L28/65

    Abstract: A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO2 is deposited over and into physical contact with the dielectric metal oxide layer. Then, the RuO2 and the dielectric metal oxide layer are annealed at a temperature below 500° C. The RuO2 in physical contact with the dielectric metal oxide during the annealing facilitates a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase. The annealed dielectric metal oxide layer is incorporated into a capacitor dielectric region of a capacitor construction. Other implementations are disclosed.

    Capacitors and Methods of Forming Capacitors
    12.
    发明申请
    Capacitors and Methods of Forming Capacitors 审中-公开
    电容器和形成电容器的方法

    公开(公告)号：US20150194478A1

    公开(公告)日：2015-07-09

    申请号：US14147424

    申请日：2014-01-03

    Applicant: Micron Technology, Inc.

    Inventor： Vassil N. Antonov ,  Vishwanath Bhat

    IPC: H01L49/02

    CPC classification number: H01L28/84 ,  H01L28/91

    Abstract: A method of forming a capacitor includes forming an elevationally elongated and elevationally inner capacitor electrode that comprises different composition laterally-outermost and laterally-innermost conductive portions that have different respective intrinsic residual mechanical stress. The innermost conductive portion is formed to have greater mechanical stress in the compressive direction than the outermost conductive portion. A capacitor dielectric is formed over the inner capacitor electrode and an elevationally outer capacitor electrode is formed over the capacitor dielectric. A capacitor construction independent of the method formed is disclosed.

    Abstract translation: 形成电容器的方法包括形成具有不同组成的横向最外侧和最外层的导电部分的具有不同的各自的本征残余机械应力的不规则的细长的和垂直内部的电容器电极。 最内侧的导电部形成为具有比最外侧导电部更大的压缩方向的机械应力。 在内部电容器电极上形成电容器电介质，并且在电容器电介质上方形成正面外部的电容器电极。 公开了独立于所形成方法的电容器结构。

    METHODS OF FORMING INSULATIVE ELEMENTS
    13.
    发明申请
    METHODS OF FORMING INSULATIVE ELEMENTS 审中-公开
    形成绝缘元素的方法

    公开(公告)号：US20150140773A1

    公开(公告)日：2015-05-21

    申请号：US14596037

    申请日：2015-01-13

    Applicant: Micron Technology, Inc.

    Inventor： Vassil Antonov ,  Jennifer K. Sigman ,  Vishwanath Bhat ,  Matthew N. Rocklein ,  Bhaskar Srinivasan ,  Chris Carlson

    IPC: H01L49/02 ,  H01L21/225 ,  H01L21/02

    CPC classification number: H01L28/40 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/1272 ,  H01G4/306 ,  H01G4/33 ,  H01L21/02172 ,  H01L21/02356 ,  H01L21/225 ,  Y10T428/2495

    Abstract: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.

    Abstract translation: 描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶 第一电介质材料和第二电介质材料中的至少一个的一部分。 描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。 还描述了包括电介质材料的结构。

    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors
    15.
    发明申请
    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权
    多材料结构，半导体结构和形成电容器的方法

    公开(公告)号：US20150054127A1

    公开(公告)日：2015-02-26

    申请号：US14501423

    申请日：2014-09-30

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    IPC: H01L49/02

    CPC classification number: H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

    Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

    Abstract translation: 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

    Methods of forming devices including multi-portion liners
    17.
    发明授权
    Methods of forming devices including multi-portion liners 有权

    公开(公告)号：US11050020B2

    公开(公告)日：2021-06-29

    申请号：US16870137

    申请日：2020-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/768

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
    20.
    发明授权
    Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material 有权
    形成电容器和包括金红石型二氧化钛材料的半导体器件的方法

    公开(公告)号：US09159731B2

    公开(公告)日：2015-10-13

    申请号：US14562298

    申请日：2014-12-05

    Applicant: Micron Technology, Inc.

    Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

    IPC: H01L21/20 ,  H01L27/108 ,  H01G4/20 ,  H01L49/02 ,  H01L21/02

    CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

    Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

    Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

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