公开(公告)号：US11346879B2

公开(公告)日：2022-05-31

申请号：US16499661

申请日：2018-01-04

申请人： Mitsubishi Electric Corporation

发明人： Chihiro Kawahara ,  Takeshi Horiguchi ,  Yoshiko Tamada ,  Yasushi Nakayama

IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L29/16 ,  H01L29/20 ,  H01L29/41 ,  H01L29/78 ,  H01L23/28 ,  H01L23/52 ,  H01L23/62

摘要： An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.

公开(公告)号：US11070046B2

公开(公告)日：2021-07-20

申请号：US15505812

申请日：2014-09-11

申请人： Mitsubishi Electric Corporation

发明人： Yoshitaka Naka ,  Yasushi Nakayama ,  Yoshiko Tamada ,  Hiroyuki Takagi ,  Junichiro Ishikawa ,  Kazuhiro Otsu ,  Naohiko Mitomi

IPC分类号： H02H3/00 ,  H02H3/08 ,  H02M7/5387 ,  H03K17/082 ,  H01L27/02 ,  H01L29/739

摘要： A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.

公开(公告)号：US10418347B2

公开(公告)日：2019-09-17

申请号：US15774014

申请日：2016-03-03

申请人： Mitsubishi Electric Corporation

发明人： Yoshiko Tamada ,  Yoshihiro Yamaguchi ,  Seiji Oka ,  Tetsuo Motomiya

IPC分类号： H01L23/16 ,  H01L25/07 ,  H01L21/52 ,  H01L25/18 ,  H01L23/051 ,  H01L23/495 ,  H01L23/24 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/861

摘要： It is an object to provide a pressure-contact power semiconductor device and a power semiconductor core module which are capable of properly reducing their sizes. Each power semiconductor core module includes the following: a plurality of power semiconductor chips including a plurality of self-turn-off semiconductor elements and a plurality of diodes adjacent to each other in plan view; and a plurality of first springs disposed between an upper metal plate and a conductive cover plate. The plurality of self-turn-off semiconductor elements of each power semiconductor core module are arranged along any one of an L-shaped line, a cross-shaped line, and a T-shaped line in plan view.

公开(公告)号：US09941255B2

公开(公告)日：2018-04-10

申请号：US15117963

申请日：2014-06-30

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Junichi Nakashima ,  Yoshiko Tamada ,  Yasushi Nakayama ,  Yukimasa Hayashida

IPC分类号： H02M1/00 ,  H01L25/07 ,  H01L23/48 ,  H01L25/18 ,  H01L23/24 ,  H01L23/373 ,  H01L23/498 ,  H01L23/049 ,  H01L23/31 ,  H01L29/16 ,  H01L29/20 ,  H01L29/41 ,  H01L29/861

CPC分类号： H01L25/072 ,  H01L23/049 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/3735 ,  H01L23/48 ,  H01L23/49811 ,  H01L23/645 ,  H01L25/07 ,  H01L25/18 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41 ,  H01L29/861 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/48111 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2924/00

摘要： A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

公开(公告)号：US09196604B2

公开(公告)日：2015-11-24

申请号：US14409301

申请日：2013-07-17

申请人： Mitsubishi Electric Corporation

发明人： Yoshiko Tamada ,  Seiji Oka

IPC分类号： H01L29/15 ,  H01L25/07 ,  H01L23/049 ,  H01L23/24 ,  H01L23/373 ,  H01L23/433 ,  H01L23/498 ,  H01L23/31 ,  H01L25/18 ,  H01L23/14 ,  H01L23/15 ,  H01L23/367 ,  H01L23/00 ,  H05K1/05 ,  H05K3/28

CPC分类号： H01L25/072 ,  H01L23/049 ,  H01L23/145 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3675 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K1/05 ,  H05K1/053 ,  H05K3/284 ,  H05K2203/1316 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for a second layer is laminated via only a second insulating layer made of resin, thereby forming a pattern laminated region. A power semiconductor element is mounted in a region other than the pattern laminated region on the first wiring pattern. The base plate, the first insulating layer, the first wiring pattern, the second insulating layer, the second wiring pattern, and the power semiconductor element are integrally sealed with a transfer mold resin, thus obtaining the power semiconductor module.

摘要翻译： 功率半导体模块包括作为金属散热体的基板，基板上的第一绝缘层和第一绝缘层上的第一布线图案。 在作为第一布线图案的一部分的预定区域上，仅通过由树脂制成的第二绝缘层层叠第二层的第二布线图案，从而形成图案层叠区域。 功率半导体元件安装在除了第一布线图案上的图案层叠区域之外的区域中。 基板，第一绝缘层，第一布线图案，第二绝缘层，第二布线图案和功率半导体元件与转移树脂一体地密封，从而获得功率半导体模块。