Abstract:
A light emitting device includes a package body, a cover made of glass or sapphire directly or indirectly secured to the package body, one or more semiconductor laser elements configured to emit a laser light, and disposed in a space enclosed by the package body and the cover, a wavelength converting member disposed above the cover in an optical path of the laser light emitted from the one or more semiconductor laser elements, a wiring disposed on a light incidence surface-side of the wavelength converting member, a resin containing a light-absorbing filler material and covering a part of the cover and a part of the wavelength converting member, and electrodes disposed on a surface of the package body, exposed from the resin and electrically connected to the wiring.
Abstract:
A light emitting device includes a package body, a light-transmissive cover, one or more semiconductor laser elements, a wavelength converting member, a wiring, electrically conductive layers, an opaque electrically insulating member, and electrodes. The light-transmissive cover is secured to the package body. The wavelength converting member is disposed above the light-transmissive cover in an optical path of the laser light emitted from the semiconductor laser element. The wiring is disposed on a light incidence surface-side of the wavelength converting member. The electrically conductive layers are electrically connected to the wiring and disposed on an upper surface of the light-transmissive cover. The electrically insulating member at least partially covers the electrically conductive layers and the light-transmissive cover. The electrodes are disposed on a surface of the package body at locations outward of the electrically insulating member in a plan view, and electrically connected to the electrically conductive layers.
Abstract:
A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.
Abstract:
A light-emitting device includes a base member, a light-emitting element, and a cover. The cover has a lateral portion surrounding a periphery of the light-emitting element and an upper portion arranged above the light-emitting element. The cover includes a wavelength conversion member and a light-shielding member. The wavelength conversion member has an incident surface where the light emitted from the light-emitting element in the lateral direction is incident, at least a part of the wavelength conversion member constituting at least a part of the upper portion of the cover. A straight line, which passes through a light-emitting point of the light-emitting element and is parallel to an optical axis direction, passes through a part of the light-shielding member. At least the part of the light-shielding member is located, relative to the wavelength conversion member, on a side opposite from the light-emitting element in the optical axis direction.
Abstract:
A light-emitting device includes a semiconductor laser element, a wavelength conversion member, and a package. The wavelength conversion member includes a wavelength conversion portion and a reflective portion. The wavelength conversion portion includes a light incident surface and a light-emitting surface. The package includes a disposition region. The wavelength conversion member is disposed at a position away in a first direction from a position at which the semiconductor laser element is disposed. The light-emitting surface has a shape that, in a plan view perpendicular to the light-emitting surface, has a first region decreasing in width in a second direction perpendicular to the first direction from the side closest to the semiconductor laser element toward the first direction.
Abstract:
A light-emitting device includes first and second semiconductor laser elements configured to respectively emit first and second lights, first and second light reflecting members each having at least four light reflecting surfaces, and a wavelength conversion member including an incident surface on which the reflected first light and the reflected second light are incident. Light intensity distributions in the fast axis direction of the first and second lights on the incident surface are more uniform than light intensity distributions in a fast axis direction of a far-field pattern of each of the first and second semiconductor laser elements. In a state in which the first and second lights are combined on the incident surface, 93% or more of a sum of light outputs of the first and second lights is emitted to a region of a 0.5 mm square on the incident surface.
Abstract:
A light emitting device includes: a base member including a mounting surface, a first light-emitting element that is disposed on the mounting surface and emits light passing along a first optical axis, a second light-emitting element that is disposed on the mounting surface and emits light passing along a second optical axis, a third light-emitting element that is disposed on the mounting surface and emits light passing along a third optical axis, and one or more light reflective members including a first light reflective surface that includes a first position to be irradiated with the light passing along the first optical axis, a second light reflective surface that includes a second position to be irradiated with the light passing along the second optical axis and, and a third light reflective surface that includes a third position to be irradiated with the light passing along the third optical axis.
Abstract:
A method of manufacturing a light emitting device, the method including: disposing a first semiconductor laser element on a disposition surface of a base member such that a light emission end surface of the first semiconductor laser element is parallel to a first line passing through a pair of alignment marks provided on the base member; and disposing a first light-reflective member on the disposition surface such that a reference line for the first light-reflective member, which serves as an alignment reference in disposing the first light-reflective member, is parallel to a second line that is oblique to the first line at a predetermined angle.
Abstract:
A method for manufacturing a light emitting device includes: providing a substrate including a placement region for placing a light emitting element on a top surface; mounting the light emitting element in the placement region; and forming a frame body surrounding the placement region on the substrate. The step of forming the frame body is performed by arranging a first frame body and second frame body on the substrate to surround the placement region. The second frame body have a larger diameter than the first frame body, and have the same thickness as the first frame body.
Abstract:
A mounting substrate includes: a base; and at least one pair of wiring patterns disposed apart from each other on the base. At least one of the wiring patterns has a mounting portion, which is configured to support an electronic part thereon and which is rectangular in a plan view. The at least one of the wiring patterns defines a hole, which exposes a part of the base and which is disposed in at least a part of an outer edge of the mounting portion.