公开(公告)号：US06982435B2

公开(公告)日：2006-01-03

申请号：US09985927

申请日：2001-11-06

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

IPC分类号： H01L31/0256

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639

摘要： A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

公开(公告)号：US06830949B2

公开(公告)日：2004-12-14

申请号：US10258128

申请日：2002-10-21

申请人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

发明人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： C30B23/02 ,  C23C14/0036 ,  C23C14/0617 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0062

摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.

摘要翻译： 提出了通过溅射法在基板上形成III族氮化物化合物半导体层的优选条件。 当通过溅射法在基板上形成第一III族氮化物化合物半导体层时，溅射装置的初始电压被选择为不高于溅射电压的110％。

公开(公告)号：US06875629B2

公开(公告)日：2005-04-05

申请号：US10479590

申请日：2002-06-03

申请人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

发明人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

IPC分类号： C23C4/02 ,  C23C4/18 ,  H01L21/20 ,  H01L29/20 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/18 ,  C23C4/02 ,  C23C4/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S257/918

摘要： A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.

摘要翻译： 在蓝宝石等的辅助基板上形成有Ti的隔离层。 在隔离层上形成TiN的底涂层。 提供底涂层，使得能够在底涂层上生长具有良好结晶性的III族氮化物化合物半导体层。 将TiN喷涂在底涂层上以形成热喷涂沉积层。 然后，隔离层被化学蚀刻以露出底涂层。 然后，在底涂层的表面上生长III族氮化物化合物半导体层。

公开(公告)号：US07128846B2

公开(公告)日：2006-10-31

申请号：US10505948

申请日：2003-02-24

申请人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

发明人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

IPC分类号： C23F1/00 ,  C30B29/38

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647

摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

摘要翻译： 一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层 将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

公开(公告)号：US20050118825A1

公开(公告)日：2005-06-02

申请号：US10505948

申请日：2003-02-24

申请人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

发明人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L21/311

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647

摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

摘要翻译： 一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层 将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

公开(公告)号：US07030414B2

公开(公告)日：2006-04-18

申请号：US10472544

申请日：2002-04-22

申请人： Shinya Asami ,  Hiroshi Watanabe ,  Jun Ito ,  Naoki Shibata

发明人： Shinya Asami ,  Hiroshi Watanabe ,  Jun Ito ,  Naoki Shibata

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/06 ,  Y10S257/918

摘要： A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.

摘要翻译： III族氮化物化合物半导体发光器件包括具有包含InGaN阱层和AlGaN阻挡层的量子阱结构的多层。 控制作为阱层的InGaN层的膜厚度，生长速度和生长温度以及作为阻挡层的AlGaN层的膜厚度被优化，从而提高发光器件的输出。

公开(公告)号：US06838706B2

公开(公告)日：2005-01-04

申请号：US10332024

申请日：2001-07-03

申请人： Hiroshi Watanabe ,  Jun Ito ,  Shinya Asami ,  Naoki Shibata

发明人： Hiroshi Watanabe ,  Jun Ito ,  Shinya Asami ,  Naoki Shibata

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/78 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34333

摘要： In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth rate and growth temperature of InGaN layer which is a well layer and the thickness of AlGaN layer which is a barrier layer so that they are optimized, the output of the light-emitting device is enhanced.

摘要翻译： 在III族氮化物化合物半导体发光器件中，采用在其两面的AlGaN层之间插入有InGaN层的部分的发光层。 通过控制作为阱层的InGaN层的厚度，生长速度和生长温度以及作为阻挡层的AlGaN层的厚度使得它们被优化，增加了发光器件的输出。

公开(公告)号：US6100545A

公开(公告)日：2000-08-08

申请号：US170128

申请日：1998-10-13

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/46

摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

公开(公告)号：US06335217B1

公开(公告)日：2002-01-01

申请号：US09525425

申请日：2000-03-14

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46

摘要： A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

摘要翻译： 提供具有结构的GaN型半导体层，其具有与GaN类半导体层相对的表面的由Ti构成的衬底。

公开(公告)号：US07312472B2

公开(公告)日：2007-12-25

申请号：US10466185

申请日：2002-01-10

申请人： Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata

发明人： Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata

IPC分类号： H01L27/15

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007

摘要： In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.

摘要翻译： 在本发明中，（Ti 1-x A x N）N [其中A是选自Al，Ga和Al中的至少一种金属 In]用作金属氮化物层，从而在金属氮化物层上形成III族氮化物化合物半导体层。 当在具有足够厚度的金属氮化物层和衬底之间形成Ti层并除去钛层时，可以获得使用金属氮化物作为衬底的III族氮化物半导体器件。