公开(公告)号：US09318727B2

公开(公告)日：2016-04-19

申请号：US14371743

申请日：2013-01-07

Applicant: OSRAM Opto Semiconductors Gmbh

Inventor： Britta Goeoetz ,  Christian Kristukat ,  Martin Wittmann ,  Benjamin Krummacher ,  Karsten Diekmann

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/529 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5271 ,  H01L51/56

Abstract: Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Abstract translation: 各种实施方案涉及有机发光器件，其包括用于产生电致发光辐射的至少一个功能层，形成在至少一个功能层上或上的封装结构，以及形成在封装结构上或之上的导热层。 导热层包括基体材料和嵌入基体材料中的导热颗粒。

公开(公告)号：US20150279902A1

公开(公告)日：2015-10-01

申请号：US14433379

申请日：2013-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L27/15 ,  H01L29/66 ,  H01L33/50 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

Abstract translation: 在至少一个实施例中，该方法被设计用于制造发光二极管显示器（1）。 该方法包括以下步骤：a）提供生长衬底（2）; •B）将缓冲层（4）直接或间接地施加到衬底表面（20）上; C）在缓冲层（4）上或缓冲层（4）上产生多个单独的生长点（45）; •D）产生源自生长点（45）的单个辐射活性岛（5），其中岛（5）各自包含具有至少一个活性区（55）的无机半导体层序列（50），并且具有 当从上方观察到基底表面（20）时，平均直径在50nm和20μm之间; 以及•E）将岛（5）连接到用于电控制岛（5）的晶体管（6）。

公开(公告)号：US10153414B2

公开(公告)日：2018-12-11

申请号：US15559946

申请日：2016-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Britta Goeoetz

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/48 ,  H01L33/54

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.

公开(公告)号：US09859330B2

公开(公告)日：2018-01-02

申请号：US14433379

申请日：2013-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L29/18 ,  H01L27/15 ,  H01L25/075 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US09159890B2

公开(公告)日：2015-10-13

申请号：US14181104

申请日：2014-02-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juergen Moosburger ,  Britta Goeoetz ,  Georg Dirscherl ,  Wolfgang Moench ,  Alexander Linkov

IPC: H01L33/00 ,  H01L33/60 ,  G03B15/02 ,  H01L33/58 ,  G03B9/02

CPC classification number: H01L33/60 ,  G03B9/02 ,  G03B15/02 ,  G03B15/05 ,  G03B2215/0567 ,  H01L33/58

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 μm. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract translation: 光电子半导体部件包括一个或多个发光二极管芯片。 发光二极管芯片具有主辐射侧。 沿着发光二极管芯片的主辐射方向在主辐射侧的下游配置隔膜。 隔膜安装在组件外壳上或组件外壳中。 主辐射侧具有至少50μm的平均边缘长度。 隔膜可以从不透光到透光的切换。 隔膜包括精确的一个用于辐射传输的开口区域。 半导体元件可以用作移动图像记录装置的手电筒。

公开(公告)号：US20140374726A1

公开(公告)日：2014-12-25

申请号：US14371743

申请日：2013-01-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Christian Kristukat ,  Martin Wittmann ,  Benjamin Krummacher ,  Karsten Diekmann

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/529 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5271 ,  H01L51/56

Abstract: Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Abstract translation: 各种实施方案涉及有机发光器件，其包括用于产生电致发光辐射的至少一个功能层，形成在至少一个功能层上或上的封装结构，以及形成在封装结构上或之上的导热层。 导热层包括基体材料和嵌入基体材料中的导热颗粒。

公开(公告)号：US20180158993A1

公开(公告)日：2018-06-07

申请号：US15816924

申请日：2017-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Alexander Behres ,  Darshan Kundaliya

IPC: H01L33/50 ,  H01L33/00

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

公开(公告)号：US09876001B2

公开(公告)日：2018-01-23

申请号：US15462710

申请日：2017-03-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L21/00 ,  H01L25/16 ,  H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  C25D13/22 ,  H01L27/15

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

公开(公告)号：US20170194305A1

公开(公告)日：2017-07-06

申请号：US15462710

申请日：2017-03-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L25/16 ,  C25D13/22 ,  C25D13/02 ,  H01L33/50 ,  C25D13/12

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

公开(公告)号：US09537064B2

公开(公告)日：2017-01-03

申请号：US14889837

申请日：2014-05-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Martin Brandl ,  Markus Burger ,  Norwin Von Malm

IPC: H01L33/00 ,  H01L33/50 ,  B29D11/00 ,  F21V9/16 ,  H01L33/54 ,  B29K83/00

CPC classification number: H01L33/505 ,  B29D11/0074 ,  B29D11/00932 ,  B29K2083/00 ,  F21V9/30 ,  H01L33/501 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

Abstract: Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

Abstract translation: 公开了一种制造其中提供波长转换层（100）的波长转换元件（10）的方法，其表面用等离子体（50）处理，并且波长转换层被冲压。 还公开了包括波长转换层的波长转换层和光电子部件。