公开(公告)号：US10266965B2

公开(公告)日：2019-04-23

申请号：US15123556

申请日：2015-02-26

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Akira Usui ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B19/02 ,  C30B29/40 ,  C30B25/20 ,  C30B29/38 ,  H01L21/02 ,  B28D5/00 ,  C30B19/06 ,  C30B25/18 ,  C30B33/00 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/30

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

公开(公告)号：US20190088816A1

公开(公告)日：2019-03-21

申请号：US16135679

申请日：2018-09-19

Applicant: DISCO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Hiroshi Morikazu ,  Shin Tabata ,  Takumi Shotokuji

IPC: H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/18

Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

公开(公告)号：US10026612B2

公开(公告)日：2018-07-17

申请号：US15028341

申请日：2014-10-08

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke Mori ,  Mamoru Imade ,  Masashi Yoshimura ,  Masashi Isemura

IPC: C30B25/02 ,  H01L21/02 ,  C30B25/14 ,  C23C16/30 ,  C23C16/448 ,  C30B25/00 ,  C30B29/40 ,  C23C16/22 ,  H01L29/20 ,  H01L29/32

Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

公开(公告)号：US09834859B2

公开(公告)日：2017-12-05

申请号：US14371607

申请日：2013-01-10

Applicant: OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Mamoru Imade ,  Masashi Yoshimura ,  Mihoko Hirao ,  Masayuki Imanishi

IPC: C30B19/02 ,  C30B19/12 ,  H01L21/02 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC classification number: C30B19/02 ,  C30B19/12 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/007

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

公开(公告)号：US11753739B2

公开(公告)日：2023-09-12

申请号：US17479516

申请日：2021-09-20

Applicant: OSAKA UNIVERSITY ,  PANASONIC HOLDINGS CORPORATION

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

CPC classification number: C30B25/165 ,  C30B29/403

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US10309036B2

公开(公告)日：2019-06-04

申请号：US15555004

申请日：2016-02-18

Applicant: OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B23/02 ,  C30B19/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02

Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

公开(公告)号：US10011921B2

公开(公告)日：2018-07-03

申请号：US15523163

申请日：2015-10-28

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC. ,  National University Corporation Tokyo University of Agriculture and Technology

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Akinori Koukitu

IPC: C30B29/40 ,  H01L21/00 ,  C30B9/02 ,  H01L29/20 ,  C30B25/02 ,  H01L21/02

CPC classification number: C30B29/406 ,  C23C16/34 ,  C30B9/02 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L33/32

Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

公开(公告)号：US10260165B2

公开(公告)日：2019-04-16

申请号：US15398319

申请日：2017-01-04

Applicant: OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B25/18 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

公开(公告)号：US11713517B2

公开(公告)日：2023-08-01

申请号：US17023720

申请日：2020-09-17

Applicant: Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC: C30B29/40 ,  C30B33/08 ,  C30B25/02

CPC classification number: C30B29/406 ,  C30B33/08 ,  C30B25/02

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US11713516B2

公开(公告)日：2023-08-01

申请号：US17340416

申请日：2021-06-07

Applicant: Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Tomoaki Sumi ,  Junichi Takino ,  Yoshio Okayama

IPC: C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  H01L21/02 ,  C01B21/06

CPC classification number: C30B29/38 ,  C30B25/02 ,  C01B21/0602 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02576 ,  H01L21/02645

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.