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公开(公告)号：US10026436B2
公开(公告)日：2018-07-17
申请号：US12496369
申请日：2009-07-01
申请人： David K. Foote , James D. Getty
发明人： David K. Foote , James D. Getty
摘要： Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.
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公开(公告)号：US09385017B2
公开(公告)日：2016-07-05
申请号：US13567507
申请日：2012-08-06
申请人： James P. Fazio , David K. Foote , James D. Getty
发明人： James P. Fazio , David K. Foote , James D. Getty
IPC分类号： H01L21/677 , H01L21/687 , C23C16/458
CPC分类号： H01L21/67742 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4585 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L21/68735 , H01L21/68771
摘要： Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside of the outer perimeter, and a gap extending between the opening and the outer perimeter. The lift plate includes annular rims of different inner diameters and that are configured to respectively support the first and second workpieces.
摘要翻译： 用于等离子体处理不同直径工件的装置和方法。 该装置包括具有外周边的提升板，外周边的内部的开口以及在开口和外周之间延伸的间隙。 提升板包括不同内径的环形轮辋，并且构造成分别支撑第一和第二工件。
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公开(公告)号：US20130109136A1
公开(公告)日：2013-05-02
申请号：US13285547
申请日：2011-10-31
申请人： David K. Foote , James D. Getty , Jiangang Zhao
发明人： David K. Foote , James D. Getty , Jiangang Zhao
IPC分类号： H01L21/60
CPC分类号： H01L21/563 , H01L23/49894 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16245 , H01L2224/26175 , H01L2224/2929 , H01L2224/29388 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48227 , H01L2224/48247 , H01L2224/73204 , H01L2224/73265 , H01L2224/81207 , H01L2224/81815 , H01L2224/83102 , H01L2224/83192 , H01L2224/83862 , H01L2224/83865 , H01L2224/92125 , H01L2224/92247 , H01L2924/00014 , H01L2924/1306 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In an embodiment of the present invention, a method is provided for fabricating an electronics assembly having a substrate and a plurality of circuit elements. The method includes forming a liquid barrier on the substrate, placing a first circuit element on one side of the liquid barrier, and placing a second circuit element on the opposite side of the liquid barrier. A liquid is applied to the first circuit element. The method further includes using the liquid barrier to prevent the liquid applied to the first circuit element from contaminating the second circuit element so that the spacing between the first and second circuit elements can be minimized
摘要翻译： 在本发明的实施例中，提供了一种用于制造具有基板和多个电路元件的电子组件的方法。 该方法包括在衬底上形成液体阻挡层，将第一电路元件放置在液体屏障的一侧，并将第二电路元件放置在液体屏障的相反侧。 液体被施加到第一电路元件。 该方法还包括使用液体屏障来防止施加到第一电路元件的液体污染第二电路元件，使得第一和第二电路元件之间的间隔可以最小化
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14.发明授权公开(公告)号：US07842223B2
公开(公告)日：2010-11-30
申请号：US11021341
申请日：2004-12-22
申请人： James D. Getty , Jiangang Zhao
发明人： James D. Getty , Jiangang Zhao
CPC分类号： H01L21/56 , B29C59/14 , H01L2924/0002 , H05K3/288 , H01L2924/00
摘要： A method for removing thin layers of a two-component molding material from areas on a substrate. The method includes using a plasma formed using a first gas mixture for removing one component of the molding material and a plasma formed using a different second gas mixture for removing the other component of the molding material. For filled epoxies commonly used as molding materials, the first gas mixture may be an oxygen-rich mixture of an oxygen-containing gas species and a fluorine-containing gas species, and the second gas mixture may be a fluorine-rich mixture of the same gases.
摘要翻译： 一种从基板上的区域去除双组分成型材料薄层的方法。 该方法包括使用使用第一气体混合物形成的等离子体，以除去模制材料的一个组分，以及使用不同的第二气体混合物形成的等离子体，以除去模制材料的其它组分。 对于通常用作成型材料的填充环氧树脂，第一气体混合物可以是含氧气体物质和含氟气体物质的富氧混合物，并且第二气体混合物可以是其富含氟的混合物 气体。
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公开(公告)号：US07013834B2
公开(公告)日：2006-03-21
申请号：US10324436
申请日：2002-12-20
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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公开(公告)号：US08613827B2
公开(公告)日：2013-12-24
申请号：US11177575
申请日：2005-07-08
IPC分类号： C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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公开(公告)号：US08480850B2
公开(公告)日：2013-07-09
申请号：US12703812
申请日：2010-02-11
IPC分类号： C23F1/00 , H01L21/306 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32422
摘要： A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
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18.发明授权Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes 有权具有密封处理室的多电极等离子体处理系统和与电极的内部总线电连接公开(公告)号：US08372238B2
公开(公告)日：2013-02-12
申请号：US12123954
申请日：2008-05-20
CPC分类号： H01J15/02 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/32577
摘要： Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.
摘要翻译： 用于从源气体产生的等离子体处理产品的装置。 该装置包括真空室，在真空室内相邻布置的多个并置电极以及与电极电耦合的等离子体激发源。 该装置可以包括延伸到每个电极内部的导电构件，以与等离子体激发源建立相应的电连接。 该装置可以包括气体分配歧管和与气体分配歧管连接的多个气体输送管。 每个气体输送管具有被配置为在每个相邻的一对电极之间注入源气体的注入口。 该装置还可以包括流动限制构件，其操作以部分地阻塞每对相邻电极之间的周边间隙，其限制源气体从每个相邻的一对电极之间的处理室逸出。
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公开(公告)号：US07845309B2
公开(公告)日：2010-12-07
申请号：US10710457
申请日：2004-07-13
IPC分类号： C23C16/50 , C23C16/503 , C23C16/509 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32834 , H01J37/32633
摘要： An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second electrode to define an evacuatable processing region therebetween. Communicating with the processing region is a process gas port for introducing a process gas to the processing region. The processing region may be evacuated through a vacuum port defined in one of the first and second electrodes to a pressure suitable for exciting a plasma from the process gas in the processing region when the first and second electrodes are powered.
摘要翻译： 一种用等离子体处理衬底的装置。 该装置包括以间隔开的关系定位的第一和第二电极。 分离环与第一电极和第二电极的相对表面具有真空密封接合，以在它们之间限定可抽空的处理区域。 与处理区域通信是用于将处理气体引入到处理区域的处理气体端口。 处理区域可以通过在第一和第二电极中的一个中限定的真空端口抽真空至适于在第一和第二电极通电时从处理区域中的处理气体激发等离子体的压力。
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20.发明授权Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate 有权等离子体处理装置和从衬底上的选定区域去除外来材料的方法公开(公告)号：US07635418B2
公开(公告)日：2009-12-22
申请号：US11003062
申请日：2004-12-03
IPC分类号： H01L21/306 , C23C16/00 , C23C16/04
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32623 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.
摘要翻译： 用于屏蔽从衬底上的第一区域突出到等离子体的特征的装置和方法，同时使用等离子体从衬底上的不同区域去除外来材料。 该装置包括至少一个位置和尺寸以容纳特征的凹陷，使得该特征与等离子体屏蔽。 该装置还包括一个窗口，等离子体通过这个窗口去除外来材料。 该方法通常包括去除外来材料，同时屏蔽特征免受等离子体暴露。
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