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    Plasma etch process using etch uniformity control by using compositionally independent gas feed
    11.
    发明申请
    Plasma etch process using etch uniformity control by using compositionally independent gas feed 审中-公开
    使用组成独立气体进料的等离子蚀刻工艺，使用蚀刻均匀性控制

    公开(公告)号：US20070249173A1

    公开(公告)日：2007-10-25

    申请号：US11490885

    申请日：2006-07-21

    申请人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76816 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/3266

    摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an inner annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power to the ceiling electrode and HF and/or LF bias power to an electrode within the electrostatic chuck. The process further includes slowing the deposition rate of the polymer near the workpiece center by injecting oxygen gas through a center or inner gas injection orifices in the center region of the ceiling electrode, and adjusting the flow rate of the oxygen gas through the center or inner gas injection orifices to minimize the difference between etch depths at the workpiece center and the workpiece periphery.

    摘要翻译： 等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。 该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的内部环形区域，以及通过围绕工件边缘的泵送环将反应器中的气体排出。 通过在蚀刻工艺气体中产生蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，在电介质膜中蚀刻高纵横比开口，通过在天线电极中施加VHF源功率在反应器中产生等离子体 和HF和/或LF偏压电力到静电卡盘内的电极。 该方法还包括通过将天然气电极的中心区域中的中心区域或内部气体注入孔注入氧气来减缓聚合物靠近工件中心的沉积速率，并且调节通过中心或内部的氧气的流速 气体注入孔，以最小化工件中心和工件周边处的蚀刻深度之间的差异。

    Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
    12.
    发明授权
    Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas 失效
    使用重质碳氟化合物蚀刻气体进行磁加强等离子体蚀刻工艺

    公开(公告)号：US06451703B1

    公开(公告)日：2002-09-17

    申请号：US09522374

    申请日：2000-03-10

    申请人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

    发明人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

    IPC分类号： H01L21302

    CPC分类号： H01L21/31116 ,  H01L21/76802

    摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

    摘要翻译： 在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。 蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。 磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。 可以使用两步法来蚀刻具有非常高的纵横比的孔。 在第二步中，磁场和氧气流减少。 其它碳氟化合物可以被取代，其F / C比小于2，更优选不超过1.6或1.5。

    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
    14.
    发明申请
    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
    等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体

    公开(公告)号：US20070247075A1

    公开(公告)日：2007-10-25

    申请号：US11490936

    申请日：2006-07-21

    申请人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： C23F1/00

    CPC分类号： H01J37/321 ,  H01J37/3244

    摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.

    摘要翻译： 用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。 反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器 气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

    Apparatus for controlling the flow of a gas in a process chamber
    17.
    发明授权
    Apparatus for controlling the flow of a gas in a process chamber 有权
    用于控制处理室中气体流动的装置

    公开(公告)号：US09443753B2

    公开(公告)日：2016-09-13

    申请号：US13015106

    申请日：2011-01-27

    申请人： David Palagashvili ,  Michael D. Willwerth ,  Jingbao Liu

    发明人： David Palagashvili ,  Michael D. Willwerth ,  Jingbao Liu

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

    CPC分类号： H01L21/68735 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32642 ,  Y10T137/85938

    摘要： Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume.

    摘要翻译： 本文提供了用于控制处理室中气体流动的装置。 在一些实施例中，用于控制处理室中的气体流动的装置，其具有设置在基板支撑件上方的处理室内的处理容积，以及设置在基板支撑件下方的处理室内的泵送体积可包括环形板 衬底支撑件，靠近衬底支撑件的衬底支撑表面的水平面，其中环形板朝向处理室的内周表面径向向外延伸，以在环形板的外边缘和内周表面之间限定均匀的间隙， 其中均匀间隙提供从处理体积到泵送体积的均匀流动路径。

    Temperature enhanced electrostatic chucking in plasma processing apparatus
    18.
    发明授权
    Temperature enhanced electrostatic chucking in plasma processing apparatus 失效
    等离子体处理装置中的温度增强型静电吸盘

    公开(公告)号：US08580693B2

    公开(公告)日：2013-11-12

    申请号：US13080561

    申请日：2011-04-05

    申请人： Sergey G. Belostotskiy ,  Michael G. Chafin ,  Jingbao Liu ,  David Palagashvili

    发明人： Sergey G. Belostotskiy ,  Michael G. Chafin ,  Jingbao Liu ,  David Palagashvili

    IPC分类号： H01L21/3065 ,  C23F1/00

    CPC分类号： H01J37/20 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67109 ,  H01L21/6831

    摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.

    摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，​​以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。

    Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species
    19.
    发明申请
    Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species 审中-公开
    通过间歇地定期将清洗物质引入主等离子体蚀刻物质来控制侧壁轮廓的方法

    公开(公告)号：US20080286979A1

    公开(公告)日：2008-11-20

    申请号：US12220503

    申请日：2008-07-24

    申请人： Taeho Shin ,  Jingbao Liu ,  Ajey M. Joshi ,  Jong Mun Kim ,  Wei-Te Wu

    发明人： Taeho Shin ,  Jingbao Liu ,  Ajey M. Joshi ,  Jong Mun Kim ,  Wei-Te Wu

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/76802 ,  H01L21/31122 ,  H01L21/31144

    摘要： A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

    摘要翻译： 在将所述凹入特征等离子体蚀刻到半导体衬底中的含碳层中时，从导通凹陷特征的开口去除含硅的硬质聚合物材料的方法。 该方法包括在连续蚀刻过程中间歇地使用清洁步骤，其中在有限时间段内将至少一种含氟清洁剂种类添加到已存在的所述连续蚀刻工艺的蚀刻剂物质中，其中时间长度 每个清洁步骤的范围是在所述清洁步骤之前或之后的蚀刻步骤的时间长度的约5％至约100％。