公开(公告)号：US10593666B2

公开(公告)日：2020-03-17

申请号：US16215870

申请日：2018-12-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Jason McDonald ,  Ali Salih ,  Alexander Young

IPC: H01L29/20 ,  H01L27/06 ,  H01L21/8258 ,  H01L21/74 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L27/02 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US10418472B2

公开(公告)日：2019-09-17

申请号：US15581170

申请日：2017-04-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter Moens ,  Jia Guo ,  Ali Salih ,  Chun-Li Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L29/20 ,  H01L29/10 ,  H01L29/205 ,  H01L29/40

Abstract: An electronic device can include a HEMT including at least two channel layers. In an embodiment, a lower semiconductor layer overlies a lower channel layer, wherein the lower semiconductor layer has an aluminum content that is at least 10% of a total metal content of the lower semiconductor layer. An upper semiconductor layer overlies the upper channel layer, wherein the upper semiconductor layer has an aluminum content that is greater as compared to the lower semiconductor layer. In another embodiment, an electronic device can include stepped source and drain electrodes, so that lower contact resistance can be achieved. In a further embodiment, an absolute value of a difference between pinch-off or threshold voltages between different channel layers is greater than 1 V and allows current to be turned on or turned off for a channel layer without affecting another channel layer.

公开(公告)号：US09985022B2

公开(公告)日：2018-05-29

申请号：US15286042

申请日：2016-10-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Ali Salih

IPC: H01L29/41 ,  H01L27/088 ,  H01L29/778

CPC classification number: H01L27/0883 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/7786

Abstract: An electronic device can include a first transistor including a first gate electrode; and a second transistor including a second gate electrode. The first and second transistors can be electrically connected in a parallel arrangement, wherein the transistors have one or more different characteristics. For example, gate length, barrier layer thickness, gate-to-drain distance, leakage current, on-state electron density, or the like may be different between the transistors. The difference in characteristics can help to reduce degradation and improve the lifetime of the first transistor.

公开(公告)号：US09905500B2

公开(公告)日：2018-02-27

申请号：US15202826

申请日：2016-07-06

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Ali Salih ,  Mihir Mudholkar ,  Chun-Li Liu ,  Jason McDonald

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49558 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L2224/40105 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/41109 ,  H01L2224/41112 ,  H01L2224/41174 ,  H01L2224/48245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2224/37099 ,  H01L2224/45099

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

公开(公告)号：US09773895B2

公开(公告)日：2017-09-26

申请号：US15133644

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Peter Moens ,  Mihir Mudholkar ,  Joe Fulton ,  Philip Celaya ,  Stephen St. Germain ,  Chun-Li Liu ,  Jason McDonald ,  Alexander Young ,  Ali Salih

IPC: H01L29/15 ,  H01L29/747 ,  H01L29/74 ,  H01L23/495 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.

公开(公告)号：US09647080B2

公开(公告)日：2017-05-09

申请号：US15040650

申请日：2016-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/00 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L21/223 ,  H01L21/265 ,  H01L21/285 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.

公开(公告)号：US09620598B2

公开(公告)日：2017-04-11

申请号：US14741567

申请日：2015-06-17

Applicant: Semiconductor Components Industries, LLC

Inventor： Chun-Li Liu ,  Ali Salih

IPC: H01L29/15 ,  H01L29/20 ,  H01L29/786 ,  H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/2003 ,  H01L29/1083 ,  H01L29/404 ,  H01L29/42376 ,  H01L29/7783 ,  H01L29/78681 ,  H01L29/78696

Abstract: An electronic device can transistor having a channel layer that includes a compound semiconductor material. In an embodiment, the channel layer overlies a semiconductor layer that includes a carrier barrier region and a carrier accumulation region. The charge barrier region can help to reduce the likelihood that de-trapped carriers from the channel layer will enter the charge barrier region, and the charge accumulation region can help to repel carriers in the channel layer away from the charge barrier layer. In another embodiment, a barrier layer overlies the channel layer. Embodiments described herein may help to produce lower dynamic on-resistance, lower leakage current, another beneficial effect, or any combination thereof.

公开(公告)号：US20170025407A1

公开(公告)日：2017-01-26

申请号：US15196461

申请日：2016-06-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Chun-Li Liu ,  Ali Salih

IPC: H01L27/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L29/866 ,  H01L27/02 ,  H01L29/205

CPC classification number: H01L27/0629 ,  H01L21/8258 ,  H01L27/0255 ,  H01L27/0288 ,  H01L27/0883 ,  H01L28/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66106 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/866 ,  H03K17/102 ,  H03K2217/0018

Abstract: In accordance with an embodiment, semiconductor component includes a compound semiconductor material based semiconductor device coupled to a silicon based semiconductor device and a protection element, wherein the silicon based semiconductor device is a transistor. The protection element is coupled in parallel across the silicon based semiconductor device and may be a resistor, a diode, or a transistor. In accordance with another embodiment, the silicon based semiconductor device is a diode. The compound semiconductor material may be shorted to a source of potential such as, for example, ground, with a shorting element.

Abstract translation: 根据实施例，半导体部件包括耦合到硅基半导体器件和保护元件的基于化合物半导体材料的半导体器件，其中硅基半导体器件是晶体管。 保护元件在硅​​基半导体器件上并联耦合，并且可以是电阻器，二极管或晶体管。 根据另一个实施例，硅基半导体器件是二极管。 化合物半导体材料可以用短路元件短路到诸如地面的电位源。

公开(公告)号：US20170025327A1

公开(公告)日：2017-01-26

申请号：US15205693

申请日：2016-07-08

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Ali Salih ,  Prasad Venkatraman ,  Chun-Li Liu

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/4951 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49544 ,  H01L23/49562 ,  H01L24/09 ,  H01L24/89 ,  H01L2224/0916 ,  H01L2224/09181 ,  H01L2224/80001

Abstract: In accordance with an embodiment, a semiconductor component includes a support having first and second device receiving structures. A semiconductor device configured from a III-N semiconductor material is coupled to the support, wherein the semiconductor device has opposing surfaces. A first bond pad extends from a first portion of the first surface, a second bond pad extends from a second portion of the first surface, and a third bond pad extends from a third portion of the first surface. The first bond pad is coupled to the first device receiving portion, the drain bond pad is coupled to the second device receiving portion, and the third bond pad is coupled to the third lead. In accordance with another embodiment, a method includes coupling a semiconductor chip comprising a III-N semiconductor substrate material to a support.

公开(公告)号：US20160172458A1

公开(公告)日：2016-06-16

申请号：US15040650

申请日：2016-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/47 ,  H01L29/66 ,  H01L21/265 ,  H01L29/78 ,  H01L29/06 ,  H01L21/223 ,  H01L29/872 ,  H01L21/285

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.