公开(公告)号：US09947695B2

公开(公告)日：2018-04-17

申请号：US15332323

申请日：2016-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  H01L29/786 ,  G09G3/20 ,  G09G3/3291 ,  G11C19/28 ,  H03K17/16 ,  H03K19/003 ,  H03K19/096 ,  G11C19/18 ,  G09G3/3233 ,  G09G3/36

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

Abstract: Exemplary semiconductor devices include eight transistors and two capacitors interconnected in specific configurations. A display device may include a driver circuit having such a semiconductor device. An electronic device may also include such a semiconductor device and an input unit, LED lamp or speaker.

公开(公告)号：US09786689B2

公开(公告)日：2017-10-10

申请号：US15063664

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/00 ,  H01L27/00 ,  H01L27/12 ,  G02F1/1337 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/24 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

公开(公告)号：US09755083B2

公开(公告)日：2017-09-05

申请号：US15245268

申请日：2016-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Satoshi Toriumi ,  Kazuki Tanemura

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

公开(公告)号：US09537012B2

公开(公告)日：2017-01-03

申请号：US14658391

申请日：2015-03-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L23/532

CPC classification number: H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

Abstract translation: 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

公开(公告)号：US09450102B2

公开(公告)日：2016-09-20

申请号：US14252348

申请日：2014-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Satoshi Toriumi ,  Kazuki Tanemura

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US09287390B2

公开(公告)日：2016-03-15

申请号：US14284771

申请日：2014-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Toshinari Sasaki

IPC: H01L21/00 ,  H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/465 ,  H01L21/477 ,  H01L22/10 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/7869

Abstract: A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.

Abstract translation: 制造出具有优异电特性的晶体管。 在衬底上形成氧化物绝缘膜，在氧化物绝缘膜上形成氧化物半导体膜，然后在氧化物半导体膜中所含的氢被解吸的温度和氧化物绝缘中包含的部分氧进行热处理 膜被解吸，然后将加热的氧化物半导体膜蚀刻成预定形状以形成岛状氧化物半导体膜，在岛状氧化物半导体膜上形成一对电极，在该对上形成栅极绝缘膜 的电极和岛状氧化物半导体膜，并且栅极电极形成在栅极绝缘膜上。

公开(公告)号：US09236402B2

公开(公告)日：2016-01-12

申请号：US14294209

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  H02M3/158 ,  H01L29/786 ,  H02M3/07

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

Abstract: A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

Abstract translation: 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

公开(公告)号：US09209267B2

公开(公告)日：2015-12-08

申请号：US14734492

申请日：2015-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Yuichi Sato ,  Kosei Noda

IPC: H01L21/265 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

Abstract translation: 在基板上形成氧化物半导体膜。 牺牲膜形成为使得在氧化物半导体膜的深度方向上注入到氧化物半导体膜中的注入物质的浓度分布的局部最大值位于从衬底和氧化物之间的界面的区域中的局部最大值 半导体膜到氧化物半导体膜的表面。 将氧离子作为注入物质通过牺牲膜以这样的加速电压注入到氧化物半导体膜中，使得注入物质在氧化物半导体膜的深度方向上的浓度分布的局部最大值位于该区域中，以及 然后去除牺牲膜。 此外，使用氧化物半导体膜制造半导体器件。

公开(公告)号：US08999811B2

公开(公告)日：2015-04-07

申请号：US14013383

申请日：2013-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC: H01L21/76 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

Abstract translation: 使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US08941113B2

公开(公告)日：2015-01-27

申请号：US13803022

申请日：2013-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Takeuchi ,  Kosei Noda

IPC: H01L29/10 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L27/148

CPC classification number: H01L29/04 ,  H01L29/4908 ,  H01L29/78618

Abstract: To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.

Abstract translation: 提供能够抑制氧化物半导体薄膜中的氧空位的产生的半导体元件。 半导体元件具有这样的结构，其中在栅极绝缘膜中，与栅电极不重叠的区域的氮含量高于与栅电极重叠的区域的氮含量。 氮化物膜具有防止杂质扩散的优异性能; 因此，通过该结构，可以有效地抑制氧化物半导体膜中的氧，特别是沟道形成区域中的氧向半导体元件的外部的释放。