中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.03 seconds)

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210119053A1

    公开(公告)日：2021-04-22

    申请号：US16970567

    申请日：2019-02-21

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Satoru OKAMOTO

    IPC: H01L29/786 ,  H01L29/51 ,  H01L29/22

    Abstract: A semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a first conductor and a second conductor that are apart from each other over the first oxide; a second insulator covering the first insulator, the first oxide, the first conductor, and the second conductor; a third insulator over the second insulator; a fourth insulator in contact with a first conductor, a side surface of the second conductor, a side surface of the second insulator, and a side surface of the third insulator; a fifth insulator that is over the first oxide and on an inner side of the fourth insulator; a third conductor on an inner side of the fifth insulator; and a sixth insulator that is in contact with a top surface of the fourth insulator and over the third insulator, the fifth insulator, and the third conductor. The fourth insulator is divided to be apart from each other over the first oxide.

    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE
    16.
    发明申请
    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE 有权
    半导体器件及其制造方法，模块和电子器件

    公开(公告)号：US20170033226A1

    公开(公告)日：2017-02-02

    申请号：US15217080

    申请日：2016-07-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Satoru OKAMOTO ,  Motomu KURATA ,  Yuta ENDO

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L21/8258 ,  H01L22/12 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

    Abstract: A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially.

    Abstract translation: 提供一种包括具有小型化结构的晶体管的半导体器件。 第一绝缘体设置在堆叠中，其中半导体，第一导体和第二导体以该顺序堆叠。 在第一绝缘体上形成蚀刻掩模。 使用蚀刻掩模，蚀刻第一绝缘体和第二导体，直到暴露出第一导体。 在蚀刻第一导体直到半导体暴露以形成宽度小于第二导体的沟槽之后，依次形成第二绝缘体和第三导体。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    17.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20130214393A1

    公开(公告)日：2013-08-22

    申请号：US13851122

    申请日：2013-03-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Satoru OKAMOTO

    IPC: H01L29/786

    CPC classification number: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

    Abstract: An object is to provide a semiconductor device with improved reliability in which a defect stemming from an end portion of a semiconductor layer provided in an island shape is prevented, and a manufacturing method thereof. Over a substrate having an insulating surface, an island-shaped semiconductor layer is formed, a first alteration treatment is performed, a first insulating film is formed on a surface of the island-shaped semiconductor layer, the first insulating film is removed, a second alteration treatment is performed on the island-shaped semiconductor from which the first insulating film is removed, a second insulating film is formed on a surface of the island-shaped semiconductor layer, and a conductive layer is formed over the second insulating film. An upper end portion of the island-shaped semiconductor layer has curvature by the first alteration treatment and the second alteration treatment.

    Abstract translation: 本发明的目的是提供一种具有改善的可靠性的半导体器件及其制造方法，其中，所述半导体器件具有防止由形成为岛状的半导体层的端部产生的缺陷。 在具有绝缘表面的衬底上形成岛状半导体层，进行第一改变处理，在岛状半导体层的表面上形成第一绝缘膜，除去第一绝缘膜，将第二绝缘膜除去 在去除了第一绝缘膜的岛状半导体上进行改变处理，在岛状半导体层的表面上形成第二绝缘膜，并且在第二绝缘膜上形成导电层。 岛状半导体层的上端部通过第一变更处理和第二变更处理而具有曲率。

    MEMORY DEVICE
    18.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20250072009A1

    公开(公告)日：2025-02-27

    申请号：US18947085

    申请日：2024-11-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Takanori MATSUZAKI ,  Tatsuya ONUKI ,  Yuki OKAMOTO ,  Hideki UOCHI ,  Satoru OKAMOTO ,  Hiromichi GODO ,  Kazuki TSUDA ,  Hitoshi KUNITAKE

    IPC: H10B63/00

    Abstract: A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. A first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween are provided in the first conductor. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    20.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20230014711A1

    公开(公告)日：2023-01-19

    申请号：US17947252

    申请日：2022-09-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Satoru OKAMOTO ,  Shinya SASAGAWA

    IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786 ,  H01L27/12 ,  H01L29/22 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

    Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

Patent Agency Ranking