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    SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE
    11.
    发明申请
    SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE 审中-公开

    公开(公告)号：US20200083039A1

    公开(公告)日：2020-03-12

    申请号：US16614016

    申请日：2018-04-03

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsubasa HONKE ,  Kyoko OKITA

    IPC分类号： H01L21/02 ,  C30B29/36 ,  H01L21/304

    摘要： A TTV of the silicon carbide substrate is less than or equal to 3 μm. The first main surface includes a first central region surrounded by a square having each side of 90 mm. An intersection of diagonal lines of the first central region coincides with a center of the first main surface. The first central region is constituted of nine square regions each having each side of 30 mm. A maximum LTV among the nine square regions is less than or equal to 1 μm. An arithmetic mean roughness Sa in a second central region is less than or equal to 0.1 nm, the second central region being surrounded by a square centering on the intersection and having each side of 250 μm.

    Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
    12.
    发明申请
    Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device 审中-公开

    公开(公告)号：US20190242014A1

    公开(公告)日：2019-08-08

    申请号：US16340007

    申请日：2018-07-20

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Kenji KANBARA ,  Takaya MIYASE ,  Tsubasa HONKE

    IPC分类号： C23C16/42 ,  C30B25/02 ,  C30B29/36 ,  H01L21/205 ,  H01L29/16

    摘要： A silicon carbide epitaxial film has a plurality of arc-shaped or annular basal plane dislocations and a plurality of threading dislocations. The plurality of threading dislocations have a first threading dislocation which is surrounded by the plurality of basal plane dislocations and a second threading dislocation which is not surrounded by the plurality of basal plane dislocations, when viewed from a direction perpendicular to a main surface. The plurality of basal plane dislocations and the first threading dislocation constitute an annular defect. An area density of the plurality of threading dislocations in the main surface is more than or equal to 50 cm−2. A value obtained by dividing an area density of the annular defect when viewed from the direction perpendicular to the main surface by the area density of the plurality of threading dislocations in the main surface is more than or equal to 0.00002 and less than or equal to 0.004.

    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    15.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
    制造碳化硅基板的方法

    公开(公告)号：US20140030892A1

    公开(公告)日：2014-01-30

    申请号：US13915107

    申请日：2013-06-11

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Tsubasa HONKE ,  Kyoko OKITA

    IPC分类号： H01L21/04

    CPC分类号： H01L21/0445 ,  C30B23/00 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/3065 ,  H01L29/1608

    摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing an ingot made of silicon carbide; obtaining a silicon carbide substrate by cutting the ingot prepared; etching a silicon surface of the silicon carbide substrate; and polishing the etching surface of the silicon carbide substrate after etching the silicon carbide substrate. The step of etching a silicon surface of the silicon carbide substrate includes the step of removing silicon atoms, which form the silicon carbide, from an etching region using chlorine gas, the etching region including the etching main surface of the silicon carbide substrate.

    摘要翻译： 一种制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的铸块; 通过切割制备的锭获得碳化硅衬底; 蚀刻碳化硅衬底的硅表面; 并在蚀刻碳化硅衬底之后研磨碳化硅衬底的蚀刻表面。 蚀刻碳化硅衬底的硅表面的步骤包括从蚀刻区域使用氯气去除形成碳化硅的硅原子的步骤，该蚀刻区域包括碳化硅衬底的蚀刻主表面。

    SILICON CARBIDE SUBSTRATE
    17.
    发明申请
    SILICON CARBIDE SUBSTRATE 有权

    公开(公告)号：US20220220637A1

    公开(公告)日：2022-07-14

    申请号：US17611138

    申请日：2020-03-19

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsubasa HONKE ,  Kyoko OKITA

    IPC分类号： C30B29/36 ,  H01L21/02 ,  H01L29/16 ,  H01L29/36 ,  C30B33/00

    摘要： A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.

    RECYCLE WAFER OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    18.
    发明申请
    RECYCLE WAFER OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220085172A1

    公开(公告)日：2022-03-17

    申请号：US17420416

    申请日：2019-09-26

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsubasa HONKE ,  Kyoko OKITA

    IPC分类号： H01L29/16 ,  H01L21/02

    摘要： A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 μm from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.