DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210159466A1

    公开(公告)日:2021-05-27

    申请号:US16900294

    申请日:2020-06-12

    Abstract: A display device includes: a first substrate; a barrier layer on the first substrate; an optical pattern layer on the barrier layer, and including a light blocking pattern, and a plurality of light transmitting patterns penetrating the light blocking pattern in a first direction; a first thin film transistor layer on the optical pattern layer; a light emitting element layer on the first thin film transistor layer; and a fingerprint sensor layer underneath the first substrate to receive light reflected from an external object.

    Display device
    16.
    发明授权

    公开(公告)号:US11984537B2

    公开(公告)日:2024-05-14

    申请号:US17188783

    申请日:2021-03-01

    CPC classification number: H01L33/387 H01L33/405 H01L33/42 H01L33/502 H01L33/62

    Abstract: A display device includes a substrate; a first circuit part and a second circuit part on the substrate and spaced from each other in a first direction; and an emission part between the first circuit part and the second circuit part, the emission part being located between the first circuit part and the second circuit part in a direction parallel to the substrate, wherein the first circuit part includes a first electrode extending to the emission part, wherein the second circuit part includes a second electrode extending to the emission part, and wherein the emission part includes a light emitting element located between the first electrode and the second electrode.

    Display substrate, method of manufacturing the same, and display device including the same

    公开(公告)号:US11462574B2

    公开(公告)日:2022-10-04

    申请号:US16896146

    申请日:2020-06-08

    Abstract: A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

    Thin film transistor array panel
    19.
    再颁专利

    公开(公告)号:USRE48290E1

    公开(公告)日:2020-10-27

    申请号:US16130107

    申请日:2018-09-13

    Abstract: A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a channel region disposed on the buffer layer. A source region and a drain region are disposed in the same layer as the channel region. A gate insulating layer is disposed on the channel region, and a gate electrode overlaps the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. A passivation layer is disposed on the gate electrode, the source region, the drain region, and the buffer layer. A source electrode and a drain electrode are disposed on the passivation layer, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than in the channel region.

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