公开(公告)号：US11427759B2

公开(公告)日：2022-08-30

申请号：US16946495

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd. ,  DONGWOO FINE-CHEM Co., Ltd.

Inventor： Kihun Song ,  Jungmin Oh ,  Hyosan Lee ,  Hyojoong Yoon ,  Minjung Kim ,  Jongwook Baek

IPC: C09K13/06 ,  H01L27/108 ,  H01L21/3213

Abstract: Metal-containing film etchant compositions may include hydrogen peroxide (H2O2), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

公开(公告)号：US09677002B2

公开(公告)日：2017-06-13

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: C09K13/06 ,  C23F1/26 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

公开(公告)号：US11028488B2

公开(公告)日：2021-06-08

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20180366349A1

公开(公告)日：2018-12-20

申请号：US15848481

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US09934959B2

公开(公告)日：2018-04-03

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin Cho ,  Jung-Min Oh ,  Yongmyung Jun ,  Yongsun Ko ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

公开(公告)号：US09831081B2

公开(公告)日：2017-11-28

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

公开(公告)号：US20170084469A1

公开(公告)日：2017-03-23

申请号：US15368988

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US09534839B2

公开(公告)日：2017-01-03

申请号：US13707253

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: F26B5/04 ,  H01L21/67

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。

公开(公告)号：US20230383218A1

公开(公告)日：2023-11-30

申请号：US18324260

申请日：2023-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon Kang ,  Jiwon Kim ,  Sungmin Kim ,  Hwang Suk Kim ,  Jungmin Oh ,  Hyosan Lee ,  Byoungki Choi ,  Cheol Ham ,  Kyuyoung Hwang

IPC: C11D7/26 ,  C11D11/00

CPC classification number: C11D7/265 ,  C11D11/0047

Abstract: A cleaning composition for removing residues on surfaces contains a solvent and a cleaning accelerator, but does not contain an oxidant, wherein the cleaning accelerator includes at least one of a salt represented by Formula 1A or a salt represented by Formula 1B. A method of cleaning a metal-containing film includes preparing the cleaning composition, and bring the cleaning composition into contact with a metal-containing film provided on a substrate, the metal-containing film having a surface on which residues are generated. The Formulae 1A and 1B are:

公开(公告)号：US11795550B2

公开(公告)日：2023-10-24

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306 ,  B81C1/00 ,  C09K13/04

CPC classification number: C23F1/26 ,  B81C1/00539 ,  C09K13/04 ,  C23F1/30 ,  H01L21/30604 ,  H01L21/31111

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.